scholarly journals Electrical Characterization of Conductive Threads for Textile Electronics

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 967
Author(s):  
Adrian K. Stavrakis ◽  
Mitar Simić ◽  
Goran M. Stojanović
Keyword(s):  
Internet Of Things ◽  
Electronic Devices ◽  
Electrical Characterization ◽  
Maximum Power ◽  
Electrical Performance ◽  
Microscopic Scale ◽  
Mass Public ◽  
Power Handling ◽  
New Devices

In recent years, advancements in technology are constantly driving the miniaturization of electronic devices, not only in the renowned domain of Internet-of-Things but also in other fields such as that of flexible and textile electronics. As the latter forms a great ecosystem for new devices, that could be functional such as heating garments or sensory, many suppliers have already started producing and bringing to market conductive threads that can be used by researchers and the mass public for their work. However, to date, no extensive characterization has been carried out with respect to the electrical performance of such threads and that is what this article is aiming to amend. Four commercially available threads by two different suppliers were put under test, to establish their limitations in terms of maximum power handling, both continuous and instantaneous. They were subsequently examined at a microscopic scale as well, to verify any potential caveats in their design, and any hidden limitations. A preliminary profile for each of the four threads was successfully established.

scholarly journals Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation

2018 ◽  
Vol 57 (1) ◽  
pp. 72-81 ◽  
Author(s):  
V.N. Popok ◽  
T.S. Aunsborg ◽  
R.H. Godiksen ◽  
P.K. Kristensen ◽  
R.R. Juluri ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Carrier Concentration ◽  
Electrical Performance ◽  
Clear Understanding ◽  
Si Substrates ◽  
Transfer Of Technology ◽  
Dislocation Densities ◽  
Unusual Phenomenon ◽  
Aln Buffer

Abstract Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is found to be largely unchanged. The attempt to vary the ammonia flow during the AlN synthesis is found not to affect the film composition and dislocation densities in the following heterostructures. An unusual phenomenon of considerable diffusion of Ga from the GaN film into the AlN buffer is found in all samples under the study. The obtained results are an important step in optimization of AlGaN/GaN growth towards the formation of good quality HEMT structures on sapphire and transfer of technology to Si substrates by providing clear understanding of the role of synthesis parameter on structure and composition of the films.

Structural and Electrical Characterization of Doped Zirconia Nanostructured Fibres

2012 ◽  
Vol 545 ◽  
pp. 285-289
Author(s):  
Adrian Lowe ◽  
Deborah Eve Kho Siu Chu ◽  
Li Lu
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Electrospinning Process ◽  
Electrical Performance ◽  
Energy Storage Materials ◽  
Impedance Response ◽  
Average Grain Size ◽  
Tetragonal Form ◽  
Cv Measurements

Pure and lithium-doped zirconia fibres have been produced using the electrospinning process. These fibres are seen to be mesoporous in nature and possess a dense outer skin that correlates with the existance of tetragonal structure. This tetragonal form exists in materials below a certain average grain size and also correlates well with capacitance retention, CV measurements and impedance response. During electrical performance, an initial irreversible solid electrolyte interface is believed to form and average grain size has a significant effect. This study suggests that in this mesoporous/skin form, electrospun zirconia fibres are promising energy storage materials.

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 ◽  
Vol 711 ◽  
pp. 134-138 ◽  
Author(s):  
Ana Maria Beltran ◽  
Sylvie Schamm-Chardon ◽  
Vincent Mortet ◽  
Mathieu Lefebvre ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Layer Formation ◽  
Transmission Electron ◽  
P Type ◽  
And Chemical Properties

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

scholarly journals A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

2019 ◽  
Vol 70 (2) ◽  
pp. 145-151
Author(s):  
Mourad Hebali ◽  
Menaouer Bennaoum ◽  
Mohammed Berka ◽  
Abdelkader Baghdad Bey ◽  
Mohammed Benzohra ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
Subthreshold Slope ◽  
Ultra Low Power ◽  
Dg Mosfet ◽  
Subthreshold Operation ◽  
Very High

Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

Electrical characterization of TSVs with varying process knobs and temporary bond/adhesive system robustness studies for 2.5D/3D manufacturing

2013 ◽  
Vol 2013 (1) ◽  
pp. 000233-000233
Author(s):  
Niranjan Kumar
Keyword(s):  
Electrical Parameter ◽  
Electrical Characterization ◽  
Adhesive System ◽  
Parameter Extraction ◽  
Electrical Performance ◽  
Process Window ◽  
Film Properties ◽  
Wafer Processing ◽  
The Impact

TSVs are used to carry power/ground and signals straight to the heart of the logic/memory devices where all the intricate and busy architectures lie. I consider it like the downtown area inside a city where the real estate is more expensive and requires intricate design and execution. As a result in case of the TSVs, there is no room for electrical degradation and stress interaction with transistor devices (keep out zone). The Cu protrusion, it's interaction with the intricate local interconnects (M1 and below structures), the current leakage, capacitance, reliability, become highly critical to fully achieve the power per watt advantage of the TSVs. As a result, a thorough electrical characterization of TSVs with varying film properties and the process window becomes very critical for integration with the 20nm node (and below) devices. In this paper we will discuss implementation of modified oxide liner, barrier/seed, ECD fill and CMP of films to achieve robust TSVs for electrical parameter extraction. We will closely examine the impact of these film properties on the electrical performance and its repeatability to achieve wide process windows. Such studies are expected to improve manufacturing yields of TSV product wafers at fabs/foundries. Alternately, we will present detailed metrology studies of two temporary bond method/adhesive systems as it progresses through the thin wafer downstream processes (via-reveal processes). This exercise is targeted to address productivity and yield challenges with thin wafer processing (backside via-reveal process). We will attempt to demonstrate a robust temporary bond/adhesive system that exhibits no thin wafer damage/wrinkling and no edge profile degradation issues over repeated runs (production like). This study will help to characterize the adhesive and low temperature passivation film interfaces in details to support the thin wafer processing robustness for TSV manufacturing.

Electrical Characterization of Electrochemically Grown ZnO Nanorods using STM

2012 ◽  
Vol 1391 ◽  
Author(s):  
Yuji Suzuki ◽  
Bright Ibheanacho ◽  
Arman Ahnood ◽  
Poopathy Kathirgamanathan ◽  
William Wong ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Electronic Devices ◽  
Zno Nanorods ◽  
Electrochemical Techniques ◽  
Electrical Characterization ◽  
Solar Cell Performance

AbstractZnO nanorods were grown homogenously and vertically on ITO using electrochemical techniques. The physical properties of the nanorods were characterized using SEM and optical absorption. The electrical conductivity, deduced using STM at different tip heights, and was found to be 20 Ω-cm with a carrier concentration of 3x1015 cm-3.The results show that electrochemically grown ZnO nanorods have electrical properties suitable for use in electronic devices such as solar cells and transistors. A-Si:H p-i-n solar cells were then deposited after the fabrication on the ZnO on ITO-coated substrates. The results show that the textured solar cell performance was 30% higher than the planar solar cell.

Dynamic Modeling and Electrical Characterization of a Heaving Hybrid Triboelectric-Electromagnetic Energy Harvester

2018 ◽  
Author(s):  
Zia Saadatnia ◽  
Ebrahim Esmailzadeh ◽  
Hani E. Naguib
Keyword(s):  
Energy Harvester ◽  
Mechanical Energy ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
System Response ◽  
Free Standing ◽  
Energy Harvesters ◽  
Output Performance ◽  
Output Characteristics

In this study the dynamic and electrical performance of a novel hybrid Electromagnetic-Triboelectric energy harvester is studied. The mechanism incorporates a linear tubular electromagnetic (EMG) transducer as well as a free-standing grating triboelectric (TENG) transducer. The heaving of the slider inside the stator triggers both EMG and TENG which results in electricity generation. The dynamic model of the system is firstly developed and the system response under external excitation is carried out. Then, the electrical output characteristics of each harvesting unit are developed based on the dynamic response. Then, the effects of various parameters such as frequency of excitation and external electrical load on the output performance of the harvester including voltage, current, and power density of the EMG and TENG units are investigated. This study provides a guideline toward the design and analysis of novel mechanical energy harvesters.

Performance Characterization of Multifunctional Structure-Battery Composites for Marine Applications

2008 ◽  
Author(s):  
Aashish Rohatgi ◽  
James P. Thomas ◽  
M. A. Siddiq Qidwai ◽  
William R. Pogue
Keyword(s):  
Energy Density ◽  
Electrical Characterization ◽  
Companion Paper ◽  
Fiber Reinforced Polymers ◽  
Electrical Performance ◽  
Cell Discharge ◽  
Closed Cell ◽  
Commercial Off The Shelf ◽  
Marine Applications

The aim of our work is to design, fabricate and characterize multifunctional structure-power composites for marine applications such as in unmanned underwater vehicles. Three types of structure-power (or structure-battery (SB)) specimens were fabricated using fiber-reinforced polymers and closed-cell foam as the structural components, and commercial-off-the-shelf lithium-polymer cells as the power-plus-structure component. This paper details the mechanical and electrical characterization of the S-B composites while a companion paper deals with the design and fabrication issues. The three multifunctional designs are: integrated SB laminate with lithium-polymer pouch cells embedded on one side, SB sandwich with cells embedded within a closed-cell polymeric foam along the neutral axis, and a SB modular stiffener that can be attached and removed from a host-structure. Unifunctional composites (i.e. without embedded cells) were also fabricated for comparison with the multifunctional composites. The embedded cells show identical charge-discharge electrical performance as their un-embedded counterparts, thus, indicating that the composite fabrication procedures did not adversely affect their electrical performance. Ragone curves (energy density vs. power density) of the S-B composites show that the targeted energy density of 50 Wh/L was achieved in the SB modular stiffener design. The bending stiffnesses of the integrated SB and SB modular stiffener designs were ∼7x greater than the unifunctional design while the multifunctional sandwich specimens were ∼17% stiffer than their unifunctional counterparts. Tests are currently being conducted to determine the affect of mechanical flexure (constant displacement) on embedded cell discharge and charge characteristics, and conversely, cell discharge and charge on the load and deflection during flexure.

scholarly journals Comparison of Electrical Characterization of AlGaN/GaN HEMT with Multi-finger Gate

2021 ◽  
Author(s):  
Lijun He ◽  
Boyang Zhao ◽  
Chengyun He ◽  
Zhiyang Xie ◽  
Xing Long ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Electrical Characterization ◽  
Drain Current ◽  
Gate Length ◽  
Saturation Current ◽  
Current Output ◽  
Gan Hemt ◽  
Accurate Comparison ◽  
Output Characteristics

Abstract This paper presents an exhaustive TCAD based comparison of the multi-gate and T-gate AlGaN/GaN HEMT. This paper simulates the DC and RF characteristics of the device and makes an accurate comparison. The important feature of the device such as threshold voltage, drain current output characteristics, transconductance, cut-off frequency, and maximum oscillation frequency were obtained. It is concluded that the shape optimization of the HEMT with multi-finger gates and the advantages over traditional T-gate devices. The device of two-finger gate with 50nm spacing has the best output characteristics, and its maximum saturation current is about 110% the size of the device of four-finger gate with 200nm at VGS=0V. And the gm and the gain of the device with 50nm spacing two-finger gate is 76mS/mm larger than the HEMT of three-finger gate with 200nm. In addition, we also conducted a simulation in the case of changing only refers to finger-gate length and cap-gate length. And it is concluded that the two-finger gate HEMT with 250nm finger-gate length and 2.0µm cap-gate length has the best output characteristics, which output current is 0.159 A/µm at VGS=-1.5V. The results show that AlGaN/GaN HEMT with multi-finger gate have great potential for high power and high frequency applications electronic devices.

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