scholarly journals Образование дислокационных пар в гетероструктуре Ge/GeSi/Si(001)

2019 ◽  
Vol 61 (2) ◽  
pp. 284
Author(s):  
Ю.Б. Болховитянов ◽  
А.К. Гутаковский ◽  
А.И. Дерябин ◽  
Л.В. Соколов
Keyword(s):  
Buffer Layer ◽  
Edge Dislocation ◽  
Dislocation Network ◽  
Edge Type ◽  
Type Form ◽  
Type Dislocation ◽  
Edge Dislocations

AbstractIn the Ge/LTGe/GeSi/Si(001) heterostructures, the GeSi buffer layer remains pseudomorphic in a certain range of the heterostructure parameters and growth regimes, while the Ge film is completely relaxed owing to the edge dislocation network at the Ge/GeSi interface. It has been experimentally shown that, along with edge dislocations, dislocations with the Burgers vectors of the a _0〈100〉-type form. Their formation is caused by the reaction of 60° dislocations with a unidirectional screw component. In this case, if during the buffer layer relaxation the edge dislocations split with the formation of an edge-type dislocation complex, in which the 60° dislocations remained bound, the dislocations with the Burgers vectors a _0〈001〉 split into two independent 60° dislocations.

scholarly journals New Developments in Understanding Harper-Dorn, Five- power Law Creep and Power-law Breakdown

2020 ◽  
Author(s):  
michael kassner
Keyword(s):  
Stress Exponent ◽  
Power Law ◽  
Dislocation Network ◽  
Creep Equation ◽  
Self Diffusion ◽  
Wide Range ◽  
Recent Developments ◽  
Initial Dislocation Density ◽  
Power Law Creep ◽  
Edge Dislocations

This paper discusses recent developments in creep, over a wide range of temperature, that mqy change our understanding of creep. The five-power law creep exponent (3.5 to 7) has never been explained in fundamental terms. The best the scientific community has done is to develop a natural three power-law creep equation that falls short of rationalizing the higher stress exponents that are typically five. This inability has persisted for many decades. Computational work examining the stress-dependence of the climb rate of edge dislocations we may rationalize the phenomenological creep equations. Harper-Dorn creep, “discovered” over 60 years ago has been immersed in controversy. Some investigators have insisted that a stress exponent of one is reasonable. Others believe that the observation of a stress exponent of one is a consequence of dislocation network frustration. Others believe the stress exponent is artificial due to the inclusion of restoration mechanisms such as dynamic recrystallization or grain growth that is not of any consequence in the five power-law regime. Also, the experiments in the Harper-Dorn regime, which accumulate strain very slowly (sometimes over a year) may not have attained a true steady state. New theories suggest that absence or presence of Harper-Dorn may be a consequence of the initial dislocation density. Novel experimental work suggests that power-law breakdown may be a consequence of a supersaturation of vacancies which increase self-diffusion.

Computer Simulation of Creation and Motion of Edge Dislocations in Face Centered Crystals

1994 ◽  
Vol 356 ◽  
Author(s):  
N. Tajima ◽  
T. Nozaki ◽  
T. Hirade ◽  
Y. Kogure ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Edge Dislocation ◽  
Embedded Atom ◽  
Small Crystals ◽  
Face Centered ◽  
Edge Dislocations

AbstractComplete and dissociated edge dislocations were created near the center of the surface (101) of aluminum small crystals whose surfaces are (111), (111), (101), (101). (121) and (121). Molecular dynamics with N-body embedded atom potentials were used. Higher stress is needed to create a complete edge dislocation than to create a dissociated dislocation.

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 327-330 ◽  
Author(s):  
Huan Huan Wang ◽  
Sha Yan Byrapa ◽  
F. Wu ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Shear Stress ◽  
Slip Plane ◽  
Opposite Direction ◽  
Edge Dislocation ◽  
Basal Plane ◽  
Detailed Mechanism ◽  
Slip Planes ◽  
Basal Plane Dislocation ◽  
Edge Dislocations ◽  
Dislocation Multiplication

In this paper, we report on the synchrotron white beam topographic (SWBXT) observation of “hopping” Frank-Read sources in 4H-SiC. A detailed mechanism for this process is presented which involves threading edge dislocations experiencing a double deflection process involving overgrowth by a macrostep (MP) followed by impingement of that macrostep against a step moving in the opposite direction. These processes enable the single-ended Frank-Read sources created by the pinning of the deflected basal plane dislocation segments at the less mobile threading edge dislocation segments to “hop” from one slip plane to other parallel slip planes. We also report on the nucleation of 1/3< >{ } prismatic dislocation half-loops at the hollow cores of micropipes and their glide under thermal shear stress.

Sn-based Group-IV Semiconductors on Si: New Infrared Materials and New Templates for Mismatched Epitaxy

2005 ◽  
Vol 891 ◽  
Author(s):  
John Tolle ◽  
Radek Roucka ◽  
Vijay D'Costa ◽  
Jose Menendez ◽  
Andrew Chizmeshya ◽  
...  
Keyword(s):  
Band Gap ◽  
Buffer Layer ◽  
Lattice Mismatch ◽  
Group Iv ◽  
Buffer Layers ◽  
Direct Band Gap ◽  
Group Iv Semiconductors ◽  
Direct Band ◽  
Infrared Materials ◽  
Edge Dislocations

ABSTRACTWe report growth and properties of GeSn and SiGeSn alloys on Si (100). These materials are prepared using a novel CVD approach based on reactions of Si-Ge hydrides and SnD4. High quality GeSn films with Sn contents up to 20%, and strain free microstructures have been obtained. The lattice mismatch between the films and Si is relieved by Lomer edge dislocations located at the interface. This material is of interest due to the predicted cross-over to a direct gap semiconductor for moderate Sn concentrations. We find that the direct band gap, and, consequently, the main absorption edge, shifts monotonically to lower energies as the Sn concentration is increased. The compositional dependence of the direct band gap shows a strong bowing, such that the direct band gap is reduced to 0.4 eV (from 0.8 eV for pure Ge) for a concentration of 14% Sn. The ternary SiGeSn alloy has been grown for the first time on GeSn buffer layers. This material opens up entirely new opportunities for strain and band gap engineering using group-IV materials via decoupling of strain and composition. Our SiGeSn layers have lattice constants above and below that of pure Ge, and depending on the thickness and composition of the underlying buffer layer they can be grown relaxed, with compressive, or with tensile strain. In addition to acting as a buffer layer for the growth of SiGeSn, we have found that GeSn can act as a template for the subsequent growth of a variety of materials, including III-V semiconductors.

The Creation of Misfit Dislocations; A Study of InGaAs Alloys on GaAs Substrates

1990 ◽  
Vol 202 ◽  
Author(s):  
Peter J Goodhew ◽  
Philip Kightley
Keyword(s):  
Measurement Error ◽  
Buffer Layer ◽  
Interface Plane ◽  
Misfit Dislocations ◽  
Strained Layer ◽  
Gaas Substrates ◽  
Angle Point ◽  
Point Of Intersection ◽  
Edge Dislocations ◽  
Line Direction

ABSTRACTGrowth onto vicinal substrates causes 60° misfit dislocations to adopt line directions away from <110> in order for them to maintain their presence within the substrate to strained layer interface. Observations show that for the growth of an on-axis [001]wafer the dislocations have a line direction, within measurement error, exactly [110] or [-110] and two sets of orthogonal dislocations are generated. When grown onto a wafer that is cut off-axis toward [010] four sets of dislocations are generated. The two sets of dislocations in each direction converge to form low angle intersections from which edge dislocations are formed. These edge dislocations can become very long by the glide out of the interface plane of the component 60° dislocations. This ‘zipping-up’ to form the edge components only occurs in one direction from the low angle point of intersection and the edge segments are exclusively generated in the buffer layer. Their density and penetration are a function of thickness and composition of the mismatched epilayer. The mechanisms by which the dislocations adopt line directions away from <110> and why they zip-up from the intersection in only one direction are discussed.

Atomistic Modeling and Simulation of Impurity Atmosphere in Silicon and Edge Dislocation Locking Effects

2004 ◽  
Vol 810 ◽  
Author(s):  
A. Karoui
Keyword(s):  
Edge Dislocation ◽  
Theoretical Study ◽  
Dislocation Core ◽  
Atomic Fraction ◽  
Atomistic Modeling ◽  
Self Energy ◽  
Occupancy Probability ◽  
Effect Model ◽  
Dopant Atoms ◽  
Edge Dislocations

ABSTRACTA theoretical study of edge dislocation locking by impurities in silicon is presented. Three groups of impurities are considered: (i) light atoms O, N, and C., (ii) large atoms Ga, and Ge, and (iii) small dopant atoms B, P, and Al. Based on impurity size effect model, these three groups produce distinct different dislocation locking effects. Atoms from the first group strongly bind with edge dislocations. The O, N, and C atmospheres are similar, with a slightly stronger occupancy probability for O and N in the vicinity of the dislocation core. For the second group, Ge loosely binds to dislocation and resists at most 1/3 of the separation shear stress that the first group can withstand. Germanium has only a small chance to reach the dislocation core. The third impurity group does not resist shear any separation stress from edge dislocations. Moreover, B and P atoms can not be trapped at all by edge dislocations. At a local atomic fraction of 10−4, edge dislocation-impurity binding energy varies from 0.008 eV/Å for P to 1.7 eV/Å for N and 1. 8 eV/Å for O. In addition, using molecular mechanics on system of 34552 atoms the self-energy of an edge dislocation was calculated and found equal to 156 meV/Å.

Study of Dislocation Densities of Thick GaN Films

2014 ◽  
Vol 989-994 ◽  
pp. 387-390
Author(s):  
Yon Gan Li ◽  
Xiang Qian Xiu ◽  
Xue Mei Hua ◽  
Shi Ying Zhang ◽  
Shi Pu Gu ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Screw Dislocation ◽  
Edge Dislocation ◽  
Thick Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Edge Dislocations

The dislocation density of GaN thick films has been measured by high-resolution X-ray diffraction. The results show that both the edge dislocations and the screw dislocation reduce with increasing the GaN thickness. And the edge dislocations have a larger fraction of the total dislocation densities, and the densities for the edge dislocation with increasing thickness reduce less in contrast with those for the screw dislocation.

Yield Stress Reversibility and the Operation of Frank-Read Sources in Li2 Alloys in the Anomalous Regime For (111) Slip

1994 ◽  
Vol 364 ◽  
Author(s):  
S. S. Ezz ◽  
P. B. Hirsch
Keyword(s):  
Strain Rate ◽  
Temperature Dependence ◽  
Yield Stress ◽  
Edge Dislocation ◽  
Anomalous Temperature Dependence ◽  
Successful Operation ◽  
Anomalous Temperature ◽  
Small Strains ◽  
Edge Dislocations ◽  
Is Strain

AbstractThe yield stress τy at small strains (≈ 0.01%) is strain rate independent, and has the same anomalous temperature dependence as that of the 0.2% strain. τy is considered to be the stress at which Frank-Read sources operate in a virgin crystal. For successful operation, τy must exceed the stress τs at which screws propagate dynamically through the crystal, and the source dislocation must pass rapidly through the unstable Frank - Read configuration. This can be achieved by the bowing edge dislocation overcoming local obstacles before reaching that configuration. Loops elongated along the screw direction are expected to be formed in the microstrain region. Under certain conditions such loops are unstable on unloading, thereby generating long edge dislocations which can operate successfully as sources at low but not at high temperatures, explaining the reversibility phenomenon.

Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals

2016 ◽  
Vol 858 ◽  
pp. 73-76 ◽  
Author(s):  
Komomo Tani ◽  
Tatsuo Fujimoto ◽  
Kazuhito Kamei ◽  
Kazuhiko Kusunoki ◽  
Kazuaki Seki ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Sharp Increase ◽  
Grown Crystal ◽  
Stacking Faults ◽  
Dislocation Network ◽  
Two Dimensional ◽  
Partial Dislocations ◽  
Plane Distribution ◽  
Edge Dislocations ◽  
Crystal Interface

Dislocation structures at the seed/grown-crystal interface in PVT-grown 4H-SiC crystals are investigated. The dislocation density is found to show a sharp increase at the interface and its main contribution is probably ascribable to TEDs which stem from BPDs generating at the interface through the structural transformation. Intense TEM observations reveal an intriguing in-plane distribution structure of the interface BPDs; the BPDs form a two-dimensional dislocation network comprising of {-1100} partial dislocations associated with expanded areas of stacking faults at the nodes of the network.

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