scholarly journals Структурные характеристики выращенных методом RF-катодного напыления тонких пленок Sr-=SUB=-0.61-=/SUB=-Ba-=SUB=-0.39-=/SUB=-Nb-=SUB=-2-=/SUB=-O-=SUB=-6-=/SUB=-/ MgO(001)

2021 ◽  
Vol 63 (2) ◽  
pp. 250
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Л.И. Ивлева ◽  
А.П. Ковтун ◽  
К.М. Жидель ◽  
...  
Keyword(s):  
Thin Films ◽  
Tensile Strain ◽  
Cell Deformation ◽  
Interface Plane ◽  
Dielectric Measurements ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
X Ray ◽  
High Tunability ◽  
Barium Strontium

Thin films of the congruent composition of the barium-strontium niobates solid solutions Sr0.61Ba0.39Nb2O6 (SBN: 61) with thicknesses from 30 to 630 nm on a MgO (001) substrate were fabricated by RF-cathode sputtering in an oxygen atmosphere. By X-ray diffraction it was found that the films are epitaxial and there are no impurities in them. In the films, there is practically no unit cell deformation in the interface plane and tensile strain is present in the normal to the surface direction, which increases with decreasing film thickness. Dielectric measurements indicate high tunability in the films.

scholarly journals Структура и сегнетоэлектрические свойства гетероэпитаксиальных тонких пленок NaNbO-=SUB=-3-=/SUB=-, полученных методом RF-катодного распыления

2020 ◽  
Vol 46 (2) ◽  
pp. 15
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Н.В. Тер-Оганесян
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Oxygen Atmosphere ◽  
Cell Deformation ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
Ferroelectric State ◽  
X Ray ◽  
First Time

For the first time, thin films of NaNbO3 on a MgO(001) substrate, on which a SrRuO3 layer was previously deposited, were obtained by RF cathode sputtering in an oxygen atmosphere. According to x-ray diffraction analysis the films are single phase and single-crystalline. The lattice parameters in the tetragonal approximation for the NaNbO3 and SrRuO3 layers were: с(NaNbO3) = 0.3940(1) nm, a(NaNbO3) = 0.389(1) nm; с(SrRuO3) = 0.4004(1) nm, a(SrRuO3) = 0.392(3) nm. The unit cell deformation for NaNbO3 was ε33 = 0.007, ε11 = 0.002. Dielectric and piezoelectric measurements indicate that the films are in a ferroelectric state.

A study of barium strontium titanate thin films for use in bypass capacitors

1998 ◽  
Vol 13 (1) ◽  
pp. 197-204 ◽  
Author(s):  
B. A. Baumert ◽  
L-H. Chang ◽  
A. T. Matsuda ◽  
C. J. Tracy ◽  
N. G. Cave ◽  
...  
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Aluminum Metallization ◽  
On Chip ◽  
Lower Temperature ◽  
Kinetics Of

Physical and electrical characterization techniques have been applied to the problem of developing a lower temperature process for spin-on Ba0.7Sr0.3TiO3 thin films and capacitors compatible with on-chip aluminum metallization. The films were prepared by spin-coating from carboxylate precursors and were processed at temperatures between 650 °C and 450 °C. Capacitors annealed at higher temperatures have a dielectric constant (κ) of 382, a C/A of 20 fF/μm2, and a leakage current density of 2 × 10−7 A/cm2 at 3.3 V. Those processed at 450 °C show occasionally promising but inconsistent results, correlated using TEM images with locally variable crystallization into the perovskite phase. The kinetics of the spin-on solution chemical decomposition and crystallization has been investigated through the use of x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Raman spectroscopy.

Dielectric and Room Temperature Tunable Properties of Mg-doped Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films on Pt/MgO

2002 ◽  
Vol 720 ◽  
Author(s):  
T.S. Kalkur ◽  
Woo-Chul Yi ◽  
Elliott Philofsky ◽  
Lee Kammerdine
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
High Tunability ◽  
High Dielectric ◽  
Mgo Substrate ◽  
Mg Doped

AbstractMg- doped Ba0.96 Ca0.04 Ti0.84Zr0.16O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structure of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.

scholarly journals Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 578
Author(s):  
Agata Lisińska-Czekaj ◽  
Dionizy Czekaj
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

Effect of Dopants on the Band Structure of Barium Strontium Titanate Thin Films

2005 ◽  
Vol 872 ◽  
Author(s):  
Yuebing Zheng ◽  
Shijie Wang ◽  
Cheng Hon A. Huan
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Band Structure ◽  
Dopant Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Barium Strontium ◽  
Transmission Electron

AbstractThe effect of dopants on the band structure and crystal structure of Ba0.5Sr0.5TiO3thin films on (100) LaAlO3 substrates has been investigated. The dopants include Ti, Mg and Al. The band-gap energies of the thin films were determined from the transmission spectra measured by UVVIS spectrophotometer and increased with the increase of dopant concentration regardless of the type of dopants. The crystal structure was studied by using transmission electron microscopy, atomic force microscopy, x-ray diffraction and micro-Raman spectroscopy. The relation between band structure and crystal structure was discussed.

Elasticity study of textured barium strontium titanate thin films by X-ray diffraction and laser acoustic waves

2017 ◽  
Vol 56 (5) ◽  
pp. 055501
Author(s):  
Anouar Chaabani ◽  
Anouar Njeh ◽  
Wolfgang Donner ◽  
Andreas Klein ◽  
Mohamed Hédi Ben Ghozlen
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Acoustic Waves ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium

Dielectric and Room Temperature Tunable Properties of Mg-Doped Ba 0.96 Ca 0.04 Ti 0.84Zr 0.16 O3 Thin Films on Pt/MgO

2002 ◽  
Vol 716 ◽  
Author(s):  
T.S. Kalkur ◽  
Woo-Chul Yi ◽  
Elliott Philofsky ◽  
Lee Kammerdiner
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
High Tunability ◽  
High Dielectric ◽  
Mgo Substrate ◽  
Mg Doped

AbstractMg- doped Ba0.96 Ca0.04 Ti0.84 Zr0.16 O3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structures of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700 °C in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

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