scholarly journals Parasitic Conduction Response to X-ray Radiation in Unstrained and Strained Triple-Gate SOI MuGFETs

2014 ◽  
Vol 9 (2) ◽  
pp. 97-102
Author(s):  
Fernando F. Teixeira ◽  
Caio C. M. Bordallo ◽  
Marcilei A. Guazzelli ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Voltage ◽  
Drain Current ◽  
X Rays ◽  
Back Gate ◽  
X Ray ◽  
Dose Rates ◽  
Buried Oxide ◽  
Opposite Trend

In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.

scholarly journals Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models

2018 ◽  
Vol 201 ◽  
pp. 01002
Author(s):  
Aanand ◽  
Gene Sheu ◽  
Syed Sarwar Imam ◽  
Shao Wei Lu ◽  
Shao-Ming Yang ◽  
...  
Keyword(s):  
Quantum Mechanics ◽  
Gate Voltage ◽  
Drain Current ◽  
Sensitivity Study ◽  
Compact Model ◽  
Current Sensitivity ◽  
Back Gate ◽  
Mechanics Model ◽  
Theoretical Predictions ◽  
Current Characteristics

In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.

scholarly journals The Influence of Back Gate Bias on the OCTO SOI MOSFET’s Response to X-ray Radiation

2015 ◽  
Vol 10 (1) ◽  
pp. 43-48
Author(s):  
Leonardo N. de S. Fino ◽  
Marcilei A. Guazzelli ◽  
Christian Renaux ◽  
Denis Flandre ◽  
Salvador P. Gimenez
Keyword(s):  
Comparative Analysis ◽  
Gate Bias ◽  
Electrical Behavior ◽  
Total Ionizing Dose ◽  
Back Gate ◽  
Soi Mosfet ◽  
X Ray ◽  
Buried Oxide ◽  
Threshold Voltages ◽  
The One

This work investigates the X-ray irradiation impact on the performance of an on-conventional transistor called OCTO SOI MOSFET that adopts an octagonal gate shape instead of a rectangular. The electrical behaviors of both devices were studied through an experimental comparative analysis of the total ionizing dose influence. In addition, the back-gate bias technique was applied in these devices to reestablish its threshold voltages and drain currents conditions that were degraded due the trapping of positive charges in the buried oxide. As the main finding of this work, after the irradiation procedure, we notice that the OCTO device is capable to reestablish its pre-rad electrical behavior with a smaller back gate bias than the one observed in the standard one counterpart. This is mainly because the parasitic transistors in the bird’s beak region are practically deactivated due the particular octagonal gate geometry.

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

2014 ◽  
Vol 61 (4) ◽  
pp. 969-975 ◽  
Author(s):  
Nikolaos Fasarakis ◽  
Theano Karatsori ◽  
Dimitrios H. Tassis ◽  
Christoforos G. Theodorou ◽  
Francois Andrieu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Ideality Factor ◽  
Analytical Modeling ◽  
Back Gate ◽  
Buried Oxide ◽  
Gate Control

THE PRODUCTION OF MUTATIONS BY THE IRRADIATION OF MONTCALM BARLEY

1955 ◽  
Vol 33 (6) ◽  
pp. 515-530 ◽  
Author(s):  
Thomas Lawrence
Keyword(s):  
High Dose Rate ◽  
Mutation Induction ◽  
High Dose ◽  
X Rays ◽  
New Approach ◽  
X Ray ◽  
Dose Rates ◽  
Radiation Sources ◽  
Early Maturing ◽  
New Varieties

Five radiation sources were used to induce mutations in barley. All treatments were given at a dosage of 10,000 r. equivalent. The radiation sources with their respective dose-rates in the region of the irradiated seeds were: a betatron (181.8 r./min.), an X-ray machine (201 r./min.), radium-beryllium (5.3 r./min.), and two Co60 sources (4.5 r./min. and 75.75 r./min.). None of the radiation sources used was more effective than the X-ray treatment in producing mutations. The betatron and the high dose-rate treatments from Co60 appear to be somewhat less effective than X-rays. Over 30 different mutant types were produced, including a number of vital mutants, such as stiff-strawed and early-maturing types. These appear promising as new varieties, but require further agronomic evaluation. It is concluded that mutation induction will become a useful new approach for plant breeders.

Improvements of a-Si:H/CsI(TI) X-RAY Detectors for Radiation Monitoring

1993 ◽  
Vol 302 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
M. Boero ◽  
F. Cannistraci ◽  
E. Vittone ◽  
...  
Keyword(s):  
Experimental Data ◽  
Dark Current ◽  
Radiation Monitoring ◽  
X Rays ◽  
Exposure Rate ◽  
Good Sensitivity ◽  
X Ray ◽  
Dose Rates ◽  
Photovoltaic Mode ◽  
Light Generation

ABSTRACTPhotosensitive a-Si:H p-i-n diodes, working in photovoltaic mode, have been coupled to CsI(T1) scintillators for dosimetry applications to X-ray monitoring in the energy range from 50 keV up to 15 MeV. A “mesa” approach for p-i-n diodes has been adopted both in order to better define the geometry and to obtain very low dark current. In order to optimize the geometry, a computer program has been created which simulates light generation in the scintillator, the collection by the detector and the photovoltaic current obtained as a function of exposure rate.Measurements have been carried out in the X-rays energy ranges 50-240 keV, at 6MeV and at 15 MeV. Detectors are linear in response and shows a good sensitivity, with the capability of measuring dose rates as low as 60 mR/h.The agreement between experimental data and simulation outputs can be considered good.

scholarly journals X-ray Emission Hazards from Ultrashort Pulsed Laser Material Processing in an Industrial Setting

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7163
Author(s):  
Ulf Stolzenberg ◽  
Mayka Schmitt Rahner ◽  
Björn Pullner ◽  
Herbert Legall ◽  
Jörn Bonse ◽  
...  
Keyword(s):  
Material Processing ◽  
High Dose ◽  
Reference Scenario ◽  
X Rays ◽  
Laser Material Processing ◽  
Laser Material ◽  
X Ray ◽  
Dose Rates ◽  
Industrial Setting ◽  
Ambient Dose

Interactions between ultrashort laser pulses with intensities larger than 1013 W/cm2 and solids during material processing can lead to the emission of X-rays with photon energies above 5 keV, causing radiation hazards to operators. A framework for inspecting X-ray emission hazards during laser material processing has yet to be developed. One requirement for conducting radiation protection inspections is using a reference scenario, i.e., laser settings and process parameters that will lead to an almost constant and high level of X-ray emissions. To study the feasibility of setting up a reference scenario in practice, ambient dose rates and photon energies were measured using traceable measurement equipment in an industrial setting at SCHOTT AG. Ultrashort pulsed (USP) lasers with a maximum average power of 220 W provided the opportunity to measure X-ray emissions at laser peak intensities of up to 3.3 × 1015 W/cm2 at pulse durations of ~1 ps. The results indicate that increasing the laser peak intensity is insufficient to generate high dose rates. The investigations were affected by various constraints which prevented measuring high ambient dose rates. In this work, a list of issues which may be encountered when performing measurements at USP-laser machines in industrial settings is identified.

Radiation Doses to Patients Undergoing Osteosynthesis Procedures

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Staniszewska MA ◽  
◽  
Owsiak E ◽  
Keyword(s):  
Image Intensifier ◽  
X Rays ◽  
Femoral Bone ◽  
Related Factors ◽  
Anatomic Structure ◽  
Factors Affecting ◽  
X Ray ◽  
Dose Rates ◽  
Number Of Factors ◽  
Beam Incident

Fractures of limbs are most frequent causes of orthopaedic interventions. Especially the older people are exposed to these because of motion disorders and osteoporosis. Most of orthopaedic surgery interventions are performed under X-rays control to achieve an optimal settings the anatomical details and also some artificial implants, if such are necessary. Because if that, X-ray units are common equipment in operational theatre where orthopaedic procedures are performed. As a rule they are mobile C-arm units, which are easy available in any time when are necessary. A consequence of every usage of X-rays an exposure to patient but also to operational medical team [1-3]. They are a number of factors affecting both the patient and staff irradiation. There are three categories: patient dependent, equipment dependent and procedure dependent factors. Patient dependent factors include: body thickness in the beam, complexity of the anatomic structure. Equipment dependent factors include: setting of dose rates in pulsed fluoro- and continuous fluoro mode, last image hold, acquisition, and virtual collimation. The main procedure related factors are: number of radiographic frames per run, collimation, fluoroscopic and radiographic acquisition modes, fluoroscopy time, wedge filter, magnification, distance of patient to image receptor (image intensifier or flat panel detector), distance between X-ray tube and patient, and tube angulations. Very important is also the experience of the operator. In case of patient, this is especially important for the procedures when the primary beam can cover the part of the trunk. Such situation has place in the procedure of osteosynthesis the femoral bone, reconstruction of head of femur and also osteosynthesis the humeral bone. Despite a relatively short time of real exposures, doses to patients undergoing these procedures can achieve quite high values: the entrance skin air kerma (here named the “dose”) over 80 mGy was also recorded. Additionally, in practice the primary X-ray beam incident on the same area patient’ body making a higher risk of radiation detriments. The paper presents collection of doses recorded for patients undergoing the procedures of osteosynthesis the femoral bone and the humeral bone during last moths in the big university clinic.

Dissolution characteristics of poly(methyl methacrylate) as an X-ray resist

1987 ◽  
Vol 65 (8) ◽  
pp. 975-978 ◽  
Author(s):  
E. M. Lehockey ◽  
J. D. Wice ◽  
I. Reid
Keyword(s):  
Methyl Methacrylate ◽  
Dissolution Rate ◽  
Chain Scission ◽  
X Rays ◽  
X Ray ◽  
Poly Methyl Methacrylate ◽  
Dose Rates ◽  
Main Requirement ◽  
Relative Measurements ◽  
First Time

A reversion in the dissolution characteristics of X-ray irradiated poly(methyl methacrylate) (PMMA) is shown experimentally, and a model is developed to explain the behaviour. The PMMA has been irradiated with 11 kV Cu X-rays to doses up to 240 μA∙min∙cm−2 at dose rates of 4 and 8 μA∙cm−2. The doses are determined by photoelectron emission and are therefore only relative measurements. The dissolution rate of the irradiated PMMA in a 1:2 developer of methyl isobutyl ketone and isopropyl alcohol is measured as a function of X-ray dose. For the first time, a model is developed that predicts this reversion in the dissolution rate. For the model to predict a reversion point, it is necessary to treat the processes of chain scission and cross-linking as operating on separate sites. The main requirement here is that cross-linked bonds do not become sites for scission. If this requirement is not made, no reversion is predicted.

Sign in / Sign up

Export Citation Format

Share Document