scholarly journals Electrical and Chemical Characterization of FIB-Deposited Insulators

Author(s):  
A. N. Campbell ◽  
D. M. Tanner ◽  
J. M. Soden ◽  
D. K. Stewart ◽  
A. Doyle ◽  
...  

Abstract The electrical and chemical properties of insulators produced by codeposition of siloxane compounds or TEOS with oxygen in a focused ion beam (FIB) system were investigated. Metal-insulator-metal capacitor structures were fabricated and tested. Specifically, leakage current and breakdown voltage were measured and used to calculate the effective resistance and breakdown field. Capacitance measurements were performed on a subset of the structures. It was found that the siloxanebased FIB-insulators had superior electrical properties to those based on TEOS. Microbeam Rutherford backscattering spectrometry analysis and Fourier transform infrared spectroscopy were used to characterize the films and to help understand the differences in electrical behavior as a function of gas chemistry and deposition conditions. Finally, a comparison is made between the results presented here, previous results for FIB-deposited insulators, and typical thermally-grown gate oxides and interlevel dielectric Si02 insulators.

2012 ◽  
Vol 2012 (1) ◽  
pp. 001097-001104
Author(s):  
Varughese Mathew ◽  
Tu Anh Tran

Temperature is a key accelerating factor for failures in semiconductor devices which brings reliability challenges for electronic packaging process because of the thermo-mechanical, metallurgical and chemical properties of the materials used in packaging. Failures at high temperatures (≥ 175 °C) often originate from aluminum – gold wirebonding systems because of the formation of Au-Al intermetallic phases and associated Kirkendall voiding which degrade the interface. A stack of Nickel/Palladium /Gold (Over Pad Metallization or OPM) formed on aluminum or copper bond pads are reported to be reliable pad finishing for high temperature applications. In this study OPM stack is formed by electroless plating on aluminum bond pads separated by 10 μm or more and the process is optimized to achieve high process yields. Al bond pad contamination is shown to be an important factor for achieving good plating quality and yield. Various plating defects which can lead to electrical failures are characterized. It is shown that defective rough plating can lead to wirebonding failures such as non-stick on pads (NSOP). Interface of gold ball bond and OPM after thermal aging at 225 °C for 168 hours is characterized by High Resolution Transmission Electron Microscopy (TEM) and Focused ion beam (FIB) cross-section analysis. Excellent thermal reliability with no degradation of ball shear or wire pull strengths achieved with non-defective OPM pads. High temperature (175 °C) package reliability with OPM is demonstrated for gold and copper wires.


Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.


Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.


1988 ◽  
Vol 19 (7) ◽  
pp. 1215-1218 ◽  
Author(s):  
Bengt G. Martinsson ◽  
Hans-Christen Hansson

2004 ◽  
Vol 822 ◽  
Author(s):  
A. Morata ◽  
A. Tarancón ◽  
G. Dezanneau ◽  
F. Peiró ◽  
J. R. Morante

AbstractIn the present work, the screen printing technique has been used to deposit thick films of Zr0.84Y016O1.92 (8YSZ). In order to control the final porosity in view of a specific application (SOFCs or gas sensor), an experimental design based on analysis of variances (ANOVA) has been carried out. From this, we were able to determine the influence of several technological parameters on films porosity and grain size. The films obtained have been analysed with both Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) combined with SEM. We show that only the combination of experimental design and advanced observation technique such as Focused Ion Beam allowed us to extract significant information for the improvement of the deposition process.


Author(s):  
P. Olivero ◽  
J. Forneris ◽  
M. Jakšić ◽  
Ž. Pastuović ◽  
F. Picollo ◽  
...  

2010 ◽  
Vol 16 (2) ◽  
pp. 169-178 ◽  
Author(s):  
G. Osthoff ◽  
A. Hugo ◽  
P. van Wyk ◽  
M. de Wit ◽  
S. Meyer

Physical characterization of a soymilk powder was carried out by electron microscopy. Chemical characterization was analyzed by proximate analysis, mineral composition by atomic absorption spectrometry, fatty acid composition by gas chromatography and protein composition by electrophoresis. The powder consists of large granules of 60—80 μm, which may be hollow, with smaller granules of 10—20 μm attached to them. Powder particles are covered by a layer of fat. During storage at 25 °C fat is spreading over the surface, while at —12 °C the fat is contracting. This change affected chemical stability, resulting in high level of fat oxidation when stored at 4 °C or 25 °C as well as a decrease in unsaturated fatty acids. Storage also affected the chemical properties of the re-constituted soymilk; the pH of a 12% soy powder suspension increased from 6.68±0.05 to 7.06±0.08 after 12 months of storage. Storage temperature did not affect the pH of the suspension and this change could also not be ascribed to protein aggregation.


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