Scanning Capacitance Microscopy Use in the Failure Analysis of Vcc Shorts in an Advanced Microprocessor

1998 ◽  
Author(s):  
Kendall Scott Wills ◽  
Hal Edwards ◽  
Long Nuygen ◽  
Rohini Raghunathan ◽  
Charles Todd ◽  
...  
Keyword(s):  
Failure Analysis ◽  
High Frequency ◽  
Dry Etching ◽  
Gate Length ◽  
Ozone Oxidation ◽  
Unique Pattern ◽  
Scanning Capacitance Microscopy ◽  
Poly Silicon ◽  
The Cost ◽  
Uv Ozone

Abstract This article analyzes the cause of Vcc shorts in advanced microprocessors. In one instance, an advanced microprocessor exhibited Vcc shorts at wafer sort in a unique pattern. The poly silicon was narrow in one section of the die. The gates were shown to measure small, but no electrical proof of the short could be seen. To prove the short existed as a result of the narrow gate, a Scanning Capacitance Microscope (SCM) was utilized to confirm electrical models, which indicated a narrow poly silicon gate would result in Vcc shorts. High frequency dry etching and UV-ozone oxidation were employed for deprocessing. The use of the SCM confirmed the proof that the Vcc shorts were caused by narrow gate length which causes its leaky behavior. This conclusion could have only been confirmed by processing of material through the wafer foundry at the cost of money and time.

AlNGaN HEMT T-Gate Optimal Design

2013 ◽  
Vol 347-350 ◽  
pp. 1790-1792
Author(s):  
Xiao Wei Zhang ◽  
Ke Jin Jia ◽  
Yuan Gang Wang ◽  
Zhi Hong Feng ◽  
Zheng Ping Zhao
Keyword(s):  
Optimal Design ◽  
High Frequency ◽  
Size Range ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Gan Hemt ◽  
The Cost ◽  
Gate Resistance ◽  
The Impact ◽  
Gate Size

The GaN HEMT is widely used in high-frequency aspects, use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax). But fmax is very sensitive to T-gate size, improper selection may reduce fmax, Therefore, in order to reduce the cost of production, it is necessary to select appropriate simulation T-gate size. We have worked out AlGaN/GaN HEMT with gate length of 0.17μm and fmax values 110GHz. Accuracy of the simulation model is verified by experiment. Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.

Burn-in Failure Analysis of 0.5μm 1MB SRAM: Barrier Glue Layer Cracks and Tungsten Plug “Worm Holes”

1996 ◽  
Author(s):  
E. Widener ◽  
S. Tatti ◽  
P. Schani ◽  
S. Crown ◽  
B. Dunnigan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Product Quality ◽  
Cmos Process ◽  
Designed Experiments ◽  
Root Cause ◽  
Poly Silicon ◽  
New Process ◽  
Supply Current ◽  
Electrical Analysis ◽  
Current Characteristics

Abstract A new 0.5 um 1 Megabit SRAM which employed a double metal, triple poly CMOS process with Tungsten plug metal to poly /silicon contacts was introduced. During burn-in of this product, high currents, apparently due to electrical overstress, were experienced. Electrical analysis showed abnormal supply current characteristics at high voltages. Failure analysis identified the sites of the high currents of the bum-in rejects and discovered cracks in the glue layer prior to Tungsten deposition as the root cause of the failure. The glue layer cracks allowed a reaction with the poly/silicon, causing opens at the bottom of contacts. These floating nodes caused high currents and often latch-up during burn-in. Designed experiments in the wafer fab identified an improved glue layer process, which has been implemented. The new process shows improvement in burn in performance as well as outgoing product quality.

Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

2006 ◽  
Author(s):  
Vinod Narang ◽  
P. Muthu ◽  
J.M. Chin ◽  
Vanissa Lim
Keyword(s):  
Plasma Etching ◽  
Data Interpretation ◽  
Parameters Optimization ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Technique ◽  
Thermal Oxide ◽  
Specific Analysis ◽  
Thin Oxide ◽  
P Type ◽  
Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

Case Study—Failure Analysis of a Multiplexer

2016 ◽  
Author(s):  
Michael Woo ◽  
Marcos Campos ◽  
Luigi Aranda
Keyword(s):  
Failure Analysis ◽  
High Reliability ◽  
Component Failure ◽  
Root Cause ◽  
Knowing That ◽  
Cause Of Failure ◽  
The Cost

Abstract A component failure has the potential to significantly impact the cost, manufacturing schedule, and/or the perceived reliability of a system, especially if the root cause of the failure is not known. A failure analysis is often key to mitigating the effects of a componentlevel failure to a customer or a system; minimizing schedule slips, minimizing related accrued costs to the customer, and allowing for the completion of the system with confidence that the reliability of the product had not been compromised. This case study will show how a detailed and systemic failure analysis was able to determine the exact cause of failure of a multiplexer in a high-reliability system, which allowed the manufacturer to confidently proceed with production knowing that the failure was not a systemic issue, but rather that it was a random “one time” event.

Design and Construction of a Small Reverberation Chamber Applied to Absorption and Scattering Acoustic Measurements

2014 ◽  
Vol 1077 ◽  
pp. 197-202
Author(s):  
D. Hernandez ◽  
E.J. Liu ◽  
J.H. Huang ◽  
Y.C. Liu
Keyword(s):  
High Frequency ◽  
Integration Method ◽  
Sound Field ◽  
Acoustic Measurements ◽  
Acoustic Characteristics ◽  
Reverberation Chamber ◽  
Scattering Coefficients ◽  
Reverberation Chambers ◽  
The Cost ◽  
Design And Construction

Reverberation chambers are used to create a diffuse incidence sound field, where multiple types of acoustic measurements can be performed. The chambers tend to have a large volume in order to extent the reverberation time. However, this requirement may be conditioned by the cost and the infrastructure limitations. This paper presents the design and construction of a small-scaled reverberation chamber of 3 m3 for middle-high frequency acoustic measurements. On the design, the acoustic characteristics of chamber are confirmed via finite element computer simulation. As case studies, absorption and scattering coefficients of several materials and diffusors are measured. The reverberation times needed for the measurements were obtained by the impulse response integration method. The small reverberation chamber demonstrated to be a reliable tool for middle and high frequency acoustic measurements.

scholarly journals Measurement of Antinuclear Antibodies: Assessment of Different Test Systems

2000 ◽  
Vol 7 (1) ◽  
pp. 72-78 ◽  
Author(s):  
P. Kern ◽  
M. Kron ◽  
K. Hiesche
Keyword(s):  
Rat Liver ◽  
Cost Efficiency ◽  
High Frequency ◽  
Detection Rate ◽  
Antinuclear Antibodies ◽  
Double Stranded Dna ◽  
Positive Rate ◽  
Homogeneous Pattern ◽  
The Cost ◽  
Level Of Agreement

ABSTRACT The performance of rat liver and HEp-2 in the detection of antinuclear antibodies (ANA) was studied by two independent sites and compared against an ANA enzyme immunoassay (EIA) screen and EIA systems for the measurement of antibodies to double-stranded DNA (dsDNA) and ENA. Sixty-two sera from patients with connective tissue disease (CTD) and 398 from controls suffering from other disorders were included. The level of agreement was, for HEp-2 and rat liver (within one site), 82.0% (ANA positive/ANA negative) and 51.0% (ANA pattern); and for HEp2- and HEp-2 (between sites), 71.8 and 86.5%. On sera with the ANA homogeneous pattern, the measurement of anti-ENA EIA added little to the detection rate with anti-dsDNA EIA alone. On ANA speckled sera, the EIA reactivity depended on the reaction of the mitotic cells: while sera with positive mitoses reacted similarly to ANA homogeneous sera, in those with negative mitoses the measurement of anti-ENA added about 10% to the detection rate achieved with anti-dsDNA alone. The measurement of anti-Scl-70 and anti-Jo-1 did not markedly improve the positive rate with classical ENA (anti-SSA, -SSB, -Sm, and -RNP) alone, raising doubts about the cost efficiency of including these measurements in unselected sera. The ANA EIA identified patients with CTD at a rate similar to that for rat liver and HEp-2. However, up to 98% of the sera found to be negative by ANA EIA but positive by use of rat liver and HEp-2 were from controls. Thus, the ANA EIA may possible be used as an alternative screen, particularly in laboratories with a high frequency of sera from patients not suffering from CTD.

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