Scanning Capacitance Microscopy Application for Bipolar and CMOS Doping Issues in Semiconductor Failure Analysis

2005 ◽  
Author(s):  
Coswin Lin ◽  
Homy Ou ◽  
Chia-Hsing Chao ◽  
Shey-Shi Lu
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Cross Section ◽  
Layer By Layer ◽  
Localization Method ◽  
Scanning Capacitance Microscopy ◽  
Leakage Path ◽  
Schematic Cross Section ◽  
Power Leakage ◽  
Plane View

Abstract Scanning Capacitance Microscopy (SCM) has been extensively used for identifying doping issues in semiconductor failure analysis. In this paper, the root causes of two recent problems -- bipolar beta loss and CMOS power leakage -- were verified using SCM images. Another localization method, layer-by-layer circuit repair with IROBIRCH detection, was also utilized to locate possible defects. The resulting failure mechanism for bipolar beta loss is illustrated with a schematic cross section, which shows the leakage path from the emitter to the base. In the case of CMOS power leakage, the abnormal implantation of the Pwell region was identified with the Plane view SCM image.

Front-End Failure Analysis of Integrated Circuits Using Scanning Capacitance Microscopy

2004 ◽  
Author(s):  
M.C. Huang ◽  
C.T. Lin ◽  
J.C. Lin
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Channel Length ◽  
Cross Sectional ◽  
Scanning Capacitance Microscopy ◽  
Front End ◽  
Low Threshold ◽  
Power Leakage ◽  
Plane View ◽  
Better Than

Abstract Scanning capacitance microscopy (SCM), a powerful technique to identify front-end defects, is also helpful in understanding failure mechanisms. This article discusses three front-end doping failure examples that were clearly identified by SCM analysis. The first example was NMOS leakage between drain and source. SCM images showed that N+ junction distortion resulted in effective channel length shortage. The second one was by-field SRAM failure with power leakage. From SCM images, it is clarified that P-well was directly short to P+ in bad die and slight P-well boundary shift to P+ was observed in good die. The third example was regarding low threshold voltage failure analysis. It illustrates that combination of plane-view and cross-sectional SCM analysis could help to diagnose the failure mechanism. The resolution and precision in SCM is better than that in chemical etching combined with SEM technique.

Two Unique Case Studies Performed With Photoemission Microscopy (PEM)

1996 ◽  
Author(s):  
G.F. Shade
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Case Studies ◽  
Current Flow ◽  
Failure Mechanisms ◽  
Analysis Time ◽  
Unique Case ◽  
Qualitative Evidence ◽  
Leakage Path

Abstract Two cases are presented where photoemission microscopy (PEM) quickly reduced the analysis time by providing qualitative evidence of the suspected failure mechanisms. In both cases, the failures were delaying product shipments and the PEM technique was a "last hope" approach where other proposals were either not successful, or were not available to the analysts. In case one, package residue caused a leakage path that was located and confirmed by PEM. The second case required the use of PEM to observe uniformity of current flow within a polysilicon region. This second analysis provided absolute evidence that the current flow was nonuniform which supported the suspected failure mechanism. It is believed that this is the first reported observation of these two emission mechanisms during a failure analysis.

A New Deprocess Flow of Failure Analysis for MEMS Motion Sensor

2013 ◽  
Author(s):  
Chun-An Huang ◽  
Han-Yun Long ◽  
King-Ting Chiang ◽  
Li Chuang ◽  
Kevin Tsui
Keyword(s):  
Failure Analysis ◽  
Optical Microscopy ◽  
Motion Sensor ◽  
Thermal System ◽  
Layer By Layer ◽  
Sensor Failure ◽  
Process Flow ◽  
New Process ◽  
Cutting System ◽  
Successful Observation

Abstract This paper demonstrates a new de-process flow for MEMS motion sensor failure analysis, using layer by layer deprocessing to locate defect points. Analysis tools used in this new process flow include IR optical microscopy, thermal system, SEM and a cutting system to de-process of MEMS motion sensor and successful observation defect points.

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

Unique Autoclave Stress Induced Failure Mechanism

2005 ◽  
Author(s):  
John Butchko ◽  
Bruce T. Gillette
Keyword(s):  
Corrosion Rate ◽  
Grain Boundary ◽  
Failure Analysis ◽  
Failure Mechanism ◽  
Metal Corrosion ◽  
Corrosion Mechanism ◽  
Reliability Testing ◽  
Process Change ◽  
Transistor Reliability ◽  
Pass Through

Abstract Autoclave Stress failures were encountered at the 96 hour read during transistor reliability testing. A unique metal corrosion mechanism was found during the failure analysis, which was creating a contamination path to the drain source junction, resulting in high Idss and Igss leakage. The Al(Si) top metal was oxidizing along the grain boundaries at a faster rate than at the surface. There was subsurface blistering of the Al(Si), along with the grain boundary corrosion. This blistering was creating a contamination path from the package to the Si surface. Several variations in the metal stack were evaluated to better understand the cause of the failures and to provide a process solution. The prevention of intergranular metal corrosion and subsurface blistering during autoclave testing required a materials change from Al(Si) to Al(Si)(Cu). This change resulted in a reduced corrosion rate and consequently prevented Si contamination due to blistering. The process change resulted in a successful pass through the autoclave testing.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

Sign in / Sign up

Export Citation Format

Share Document