Novel FIB Use for Failure Analysis of MEMS Gyroscopes

2016 ◽  
Author(s):  
Nathan Wang ◽  
Saunil Shah ◽  
Camille Garcia ◽  
Vicente Pasating ◽  
George Perreault
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
New Techniques ◽  
Unique Challenge ◽  
Root Cause ◽  
Large Size ◽  
Mems Gyroscopes

Abstract MEMS samples, with their relatively large size and weight, present a unique challenge to the failure analyst as they also included thin films and microstructures used in conventional integrated circuits. This paper describes how to accommodate the large MEMS structures without skimping on the microanalyses needed to get to the root cause. Investigations of tuning folk gyroscopes were used to demonstrate these new techniques.

New Rapid Failure Analysis Techniques for Multilevel Metallization

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 74-77
Author(s):  
Edward I. Cole ◽  
Richard E. Anderson
Keyword(s):  
Integrated Circuits ◽  
Product Development ◽  
Failure Analysis ◽  
New Product Development ◽  
New Product ◽  
Electronics Industry ◽  
New Techniques ◽  
Analysis Techniques ◽  
Advantages And Disadvantages ◽  
Failure Site

Open interconnections on integrated circuits (ICs) are a serious and ubiquitous problem throughout the micro-electronics industry. The efforts to understand the mechanisms responsible for producing open interconnections and to develop analytical methods to localize them demonstrate the concern manufacturers have for this problem. Multiple layers of metallization not only increase the probability that an open conductor or via will occur because of the increased number of interconnections and vias but also increase the difficulty in localizing the site of the failure because upper layers may mask the failure site.Rapid failure analysis of open-conductor defects is critical in new product development and reliability assessment of ICs where manufacturing and product development delays can cost millions of dollars a day. In this article, we briefly review some standard failure analysis approaches and then concentrate on new techniques to rapidly locate open-conductor defects that would have been difficult or impossible to identify using earlier methods. Each method is described in terms of the physics of signal generation, application, and advantages and disadvantages when compared to existing methods.

Application of Advanced Back-Side Optical Techniques in ASICs

2013 ◽  
Vol 21 (3) ◽  
pp. 30-35
Author(s):  
Douglas Martin ◽  
Samuel Beilin ◽  
Brett Hamilton ◽  
Darin York ◽  
Philip Baker ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Photon Emission ◽  
Back Side ◽  
Voltage Imaging ◽  
Root Cause ◽  
Silicon Transistors ◽  
Cause Of Failure ◽  
Metal Interconnects ◽  
Application Specific

Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.

Investigation of Metal Peeling Failure of Ti/Ni/Ag Metal Thin Films on Silicon Wafers

2014 ◽  
Vol 915-916 ◽  
pp. 847-850
Author(s):  
Yun Feng Wang ◽  
Hai Yang Chen ◽  
Biao Zhang ◽  
Wen Bin Liu ◽  
Xiao Jie Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Failure Analysis ◽  
Wafer Surface ◽  
Grinding Process ◽  
Metal Thin Films ◽  
Root Cause ◽  
Edax Analysis ◽  
High Uniformity ◽  
Ag Film

In this paper, failure analysis was conducted to investigate the root cause of Ti/Ni/Ag film peeling from silicon wafer surface. SEM and Edax analysis revealed that peeling was found at Ti/Si interface, and no contamination elements, such as C, H, O, were existed. VK Analyzer was used to measure the surface roughness, and the results revealed that the peeling failure was due to the low surface roughness resulted from excessive polishing after wafer back grinding process. Experiments for changing rabbling polishing method for bubbling polishing one were done expecting to realize high uniformity of surface roughness, and the results showed that roughness uniformity was greatly improved, and no peeling metal was left on the blue tape.

Failure Analysis and Process Verification of High-Density Copper ICs Used in Multichip Modules

2017 ◽  
Author(s):  
Jeremy A. Walraven ◽  
Mark W. Jenkins ◽  
Tuyet N. Simmons ◽  
James E. Levy ◽  
Sara E. Jensen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Root Cause Analysis ◽  
Multichip Modules ◽  
Cause Analysis ◽  
Process Verification ◽  
Root Cause ◽  
Corrective Actions ◽  
Silicon Vias ◽  
Metal Layers

Abstract Manufacturing of integrated circuits (ICs) using a split foundry process expands design space in IC fabrication by employing unique capabilities of multiple foundries and provides added security for IC designers [1]. Defect localization and root cause analysis is critical to failure identification and implementation of corrective actions. In addition to split-foundry fabrication, the device addressed in this publication is comprised of 8 metal layers, aluminum test pads, and tungsten thru-silicon vias (TSVs) making the circuit area > 68% metal. This manuscript addresses the failure analysis efforts involved in root cause analysis, failure analysis findings, and the corrective actions implemented to eliminate these failure mechanisms from occurring in future product.

Decapsulation of Copper Bonded Plastic Encapsulated Integrated Circuits Utilizing Laser Ablation and Mixed Acid Chemistry

2010 ◽  
Author(s):  
Jake E. Klein ◽  
Lucas Copeland
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Packaging Material ◽  
Device Characterization ◽  
Mixed Acid ◽  
Root Cause ◽  
Analysis Methodology ◽  
Bond Wires ◽  
Root Cause Failure Analysis

Abstract By utilizing a NdYAG lamp pumped marking laser, along with unique mixes of specific acids, reproducible decapsulation of copper bonded devices without damage to the bond wires, packaging material, or to the silicon die circuitry itself can be achieved. With the copper bond wires, die, or substrate exposed, typical failure analysis methodology can then be applied to drive root cause failure analysis or device characterization.

Laser Voltage Probing in Failure Analysis of Advanced Integrated Circuits on SOI

2012 ◽  
Author(s):  
V.K. Ravikumar ◽  
R. Wampler ◽  
M.Y. Ho ◽  
J. Christensen ◽  
S.L. Phoa
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Case Studies ◽  
Timing Analysis ◽  
Fault Isolation ◽  
Root Cause ◽  
Root Cause Identification

Abstract Laser voltage probing is the newest generation of tools that perform timing analysis for electrical fault isolation in advanced failure analysis facilities. This paper uses failure analysis case studies on SOI to showcase the implementation of laser voltage probing in the failure analysis flow and highlight its significance in root-cause identification.

Copper Bond Over Active Circuit (BOAC) and Copper Over Anything (COA) Failure Analysis

2003 ◽  
Author(s):  
Dat Nguyen ◽  
Bob Davis ◽  
Corey Lewis
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Circuit Boards ◽  
Electronic Industry ◽  
Cause Analysis ◽  
Defect Identification ◽  
Root Cause ◽  
Active Circuit ◽  
Selective Analysis

Abstract In today's electronic industry of shrinking circuit boards and shrinking semiconductor integrated circuits (IC), semiconductor companies have to be creative in providing devices with more circuitry on less silicon. Copper Bond over Active Circuit (BOAC)/Copper over Anything (COA) processes allow routing and bonding to thick top level metallization on the LinBiCMOS technology node. This paper discusses failure analysis (FA) techniques and approaches on un-passivated BOAC, and explains a generic BOAC/COA process. The approach to FA of BOAC involves package inspection-non intrusive analysis, decapsulation, die inspection, and defect identification/root cause analysis. Case studies are presented to explain the specific FA steps. Fault isolation involving BOAC requires the strategic removal of copper traces and selective analysis of the failed circuitry. Liquid crystal and micro-probing have been used effectively in failure isolation.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Sign in / Sign up

Export Citation Format

Share Document