scholarly journals FA Approach on MIM (Metal-Insulator-Metal) Capacitor Failures

2021 ◽  
Author(s):  
Kuang Shien Lee ◽  
Lai Khei Kuan
Keyword(s):  
Computer Aided Design ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Metal Insulator ◽  
Isolation Techniques ◽  
Metal Insulator Metal ◽  
The Difference ◽  
Voltage Contrast ◽  
Metal Layers

Abstract MIM (Metal-Insulator-Metal) capacitor is a capacitor fabricated between metal layers and usually in an array form. Since it is usually buried within stack of back-end metal layers, neither front side nor backside FA fault isolation techniques can easily pinpoint the defect location of a failing MIM capacitor. A preliminary fault isolation (FI) often needs to be performed by biasing the desired failing state setup to highlight the difference(s) of FI site(s) between failing unit & reference. Then, a detailed study of the CAD (Computer Aided Design) schematic and die layout focusing on the difference(s) of FI site(s) will lead to a more in-depth analyses such as Focused Ion-Beam (FIB) circuit edit, micro-probing/nano-probing, Voltage Contrast (VC) and other available FA techniques to further identify the defective MIM capacitor. Once the defective MIM capacitor was identified, FIB cross-section or delayering can be performed to inspect the physical defect on the MIM capacitor. This paper presents the FA approach and challenges in successfully finding MIM capacitor failures.

Focused Ion Beam Process for Formation of a Metal/Insulator/Metal Double Tunnel Junction

1999 ◽  
Vol 38 (Part 1, No. 12B) ◽  
pp. 7151-7154 ◽  
Author(s):  
Masayoshi Nakayama ◽  
Junichi Yanagisawa ◽  
Fujio Wakaya ◽  
Kenji Gamo
Keyword(s):  
Tunnel Junction ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Metal Insulator ◽  
Metal Insulator Metal

A Novel Fault Isolation Technique for Identifying Deep Sub-Micron Defects

2003 ◽  
Author(s):  
Fayik M. Bundhoo ◽  
Soundaranathan Kasivisvanatha
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Fault Isolation ◽  
Crystalline Lattice ◽  
Isolation Technique ◽  
Silicon Lattice ◽  
Root Cause ◽  
Wet Chemical ◽  
Metal Layers

Abstract A novel failure analysis approach has been developed to isolate and characterize deep sub micron defects in P<100>- silicon lattice. This technique utilizes unique wet chemical deprocessing and side wall cleaning in conjunction with focused ion beam milling to isolate a single vertical failing DMOS source contact from a parallel array of 462K contacts covered with oxide dielectric and top metal layers. The two methods of analysis and root cause of crystalline lattice dislocation in a vertical DMOS transistor are discussed. TEM examination of implanted dopant interface was carried out in order to determine the nature and origin of lattice dislocations. A study1 indicates that lattice dislocations are generated by deep boron and arsenic implants that are not adequately annealed. In our analysis, these dislocations were observed as loop pairs causing low-level leakage that did not initially allow the part to fail. However, these silicon lattice dislocations do pose reliability issues.

scholarly journals Fast and Effective Sample Preparation Technique for Backside Fault Isolation on GaN Packaged Devices

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Fault Isolation ◽  
Preparation Technique ◽  
Laser Marking ◽  
Sample Preparation Technique ◽  
P Type ◽  
Metal Layers

Abstract This paper describes a fast and effective sample preparation method to allow backside fault localization on GaN package devices. Backside analysis by Photon Emission Microscopy (PEM) is becoming preferable to frontside analysis when the die is covered by metal layers. This paper describes an optimized method for backside sample preparation on GaN package devices having a thick heavily doped p-type silicon substrate. The method combines mechanical and chemical deprocessing steps, resulting in a fast and effective sample preparation technique for PEM analysis. Additionally, the laser marking process parameters to facilitate orientation during the final physical failure analysis by Focused Ion Beam (FIB) are also shared.

In-Situ Electrical Monitoring and Contactless Measurement Techniques for Enhanced FIB Modifications

1998 ◽  
Author(s):  
Romain Desplats ◽  
Jamel Benbrik ◽  
Philippe Perdu ◽  
Bruno Benteo ◽  
François Marc ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Measurement Techniques ◽  
Contactless Measurement ◽  
Design Modification ◽  
Area Of Interest ◽  
Milling Operations ◽  
Voltage Contrast ◽  
Metal Layers

Abstract Recent planar technologies with 3 metal layers or more challenge current physical design modification capacities using Focused Ion Beam tools. Image visibility on the FIB is drastically reduced, making accurate positioning and milling operations in the area of interest more difficult, and the use of power planes increases the risk of short circuits while accessing inferior metal lines. Despite the complexity of FIB modifications, however, the demand for circuit modifications continues to increase. To respond to this demand for successful, time efficient, FIB modifications, step by step monitoring of operations is imperative. In this paper, we will present an innovative method which brings in-situ electrical monitoring and contactless measurement capabilities to FIB systems. Electrical connection of the circuit inside the vacuum FIB chamber is done using a commercial load module and logic waveform acquisition with the FIB is obtained without modifying FIB hardware using a voltage contrast approach. With this method, it is possible to verify the completion of FIB milling and depositing operations by temporarily suspending FIB action so that a test pattern can be run allowing electrical testing and measurements of the circuit without damaging it.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

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