scholarly journals Quantitative Study of Photoelectric Laser Stimulation for Logic State Imaging in Embedded SRAM

2021 ◽  
Author(s):  
S. Chef ◽  
C.T. Chua ◽  
J.Y. Tay ◽  
C.L Gan
Keyword(s):  
Integrated Circuits ◽  
Sensitive Information ◽  
Laser Stimulation ◽  
Voltage Change ◽  
Current Voltage ◽  
Change Effect ◽  
Highly Sensitive ◽  
Potential Benefits ◽  
Logic State ◽  
Embedded Sram

Abstract The use of optical techniques for attacking integrated circuits (ICs) at the silicon level is increasingly being reported. Although these attacks can be complex to set and require skilled attacker that can access expensive equipment, they are nonetheless very powerful. Among the different applications described in literature, there has been a focus on extracting data directly from embedded SRAM. Such attacks can provide access to highly sensitive information such as encryption keys and bypass various security strategies. An attacker usually exploits one of the several interactions that exist between light and semiconductor to generate an image where content can be directly qualified by the data in memory (Logic State Image – LSI). Thermal laser stimulation (TLS) and laser probing (EOFM-Electro-Optical Frequency Mapping) have been reported in the literature recently but Photoelectric Laser Stimulation (PLS) did not get as much attention. Considering the potential advantages of PLS over other techniques (e.g. lower power requirements to generate current/voltage change, effect can be triggered at shorter wavelength which may lead to an improved spatial resolution), we investigate in this paper if logic state images can be generated with PLS on a variety of devices and do a comparative assessment with state-of-the-art technologies to assess potential benefits and limitations.

Timing Sensitivity Analysis of Logical Nodes in Scan Design Integrated Circuits by Pulsed Diode Laser Stimulation

2008 ◽  
Author(s):  
T. Kiyan ◽  
C. Boit ◽  
C. Brillert
Keyword(s):  
Laser Pulse ◽  
Integrated Circuits ◽  
Continuous Wave ◽  
Fault Injection ◽  
Scan Design ◽  
Flip Flop ◽  
Laser Stimulation ◽  
Scan Chain ◽  
P Type ◽  
Scan Pattern

Abstract In this paper, a methodology based upon laser stimulation and a comparison of continuous wave and pulsed laser operation will be presented that localizes the fault relevant sites in a fully functional scan chain cell. The technique uses a laser incident from the backside to inject soft faults into internal nodes of a master-slave scan flip-flop in consequence of localized photocurrent. Depending on the illuminated type of the transistors (n- or p-type), injection of a logic ‘0’ or ‘1’ into the master or the slave stage of a flip-flop takes place. The laser pulse is externally triggered and can easily be shifted to various time slots in reference to clock and scan pattern. This feature of the laser diode allows triggering the laser pulse on the rising or the falling edge of the clock. Therefore, it is possible to choose the stage of the flip-flop in which the fault injection should occur. It is also demonstrated that the technique is able to identify the most sensitive signal condition for fault injection with a better time resolution than the pulse width of the laser, a significant improvement for failure analysis of integrated circuits.

scholarly journals Development of Highly Sensitive Strain Sensor Using Area-Arrayed Graphene Nanoribbons

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1701
Author(s):  
Ken Suzuki ◽  
Ryohei Nakagawa ◽  
Qinqiang Zhang ◽  
Hideo Miura
Keyword(s):  
Graphene Nanoribbons ◽  
Strain Sensor ◽  
Strain Sensors ◽  
Sensitive Strain ◽  
Bending Test ◽  
Gauge Factor ◽  
Four Point Bending ◽  
Current Voltage ◽  
Highly Sensitive ◽  
Current Voltage Relationship

In this study, a basic design of area-arrayed graphene nanoribbon (GNR) strain sensors was proposed to realize the next generation of strain sensors. To fabricate the area-arrayed GNRs, a top-down approach was employed, in which GNRs were cut out from a large graphene sheet using an electron beam lithography technique. GNRs with widths of 400 nm, 300 nm, 200 nm, and 50 nm were fabricated, and their current-voltage characteristics were evaluated. The current values of GNRs with widths of 200 nm and above increased linearly with increasing applied voltage, indicating that these GNRs were metallic conductors and a good ohmic junction was formed between graphene and the electrode. There were two types of GNRs with a width of 50 nm, one with a linear current–voltage relationship and the other with a nonlinear one. We evaluated the strain sensitivity of the 50 nm GNR exhibiting metallic conduction by applying a four-point bending test, and found that the gauge factor of this GNR was about 50. Thus, GNRs with a width of about 50 nm can be used to realize a highly sensitive strain sensor.

WiPo for SAR

2019 ◽  
pp. 760-780
Author(s):  
Karyn Rastrick ◽  
Florian Stahl ◽  
Gottfried Vossen ◽  
Stuart Dillon
Keyword(s):  
Emergency Management ◽  
Search And Rescue ◽  
Mobile Service ◽  
Sensitive Information ◽  
Real World Application ◽  
Source Data ◽  
Mobile Information ◽  
Potential Benefits ◽  
Study Participants ◽  
Core Functionality

WiPo (Web in your pocket) is a prototypical mobile information provisioning concept that can offer potential benefits to a range of situations where data sources are vast, dynamic and unvalidated and where continuous Internet connectivity cannot be assured. One such case is that of search and rescue (SAR), a unique case of emergency management characterized by the need for high-quality, accurate and time-sensitive information. This paper reports on empirical research undertaken to explore the potential for a real-world application of a mobile service such as WiPo which is based on the delivery of highly curated, multi-source data made available offline. Adopting an interpretive interview-based approach, the authors evaluate the potential usefulness of WiPo for search and rescue incidents in New Zealand. Upon learning of the core functionality of WiPo and the alignment of that with the typical search and rescue situation, study participants were unanimously positive about its potential for improving search and rescue management and outcomes.

Who is Guarding the Doors

2011 ◽  
pp. 299-315
Author(s):  
Manish Gupta ◽  
Pradeep Kumar KB ◽  
H. R. Rao
Keyword(s):  
Recent Trend ◽  
Internet Banking ◽  
Online Banking ◽  
Sensitive Information ◽  
Banking Services ◽  
Highly Sensitive ◽  
Public Channel ◽  
Social Demographics ◽  
The Cost ◽  
Use Of Internet

Internet banking has become the preferred channel for conducting banking activities across globe and amongst all social demographics. Only a few other technological adoptions can compare with the recent trend of use of Internet banking facilities. Given the cost advantages and benefits it has to offer, it is widely touted as a win-win strategy for both banks and customers. However, with the growth in E-banking services and reliance on a public channel–Internet–to conduct business, it has been challenging for banks to ensure integrity and confidentiality of highly sensitive information. This chapter presents an overview of authentication issues and challenges in the online banking area with analysis on some of the better approaches. The chapter compares different authentication methods and discusses ensuing issues. The chapter will be invaluable for managers and professionals in understanding the current authentication landscape.

Electronics for SPring-8 X-ray beam monitors

1998 ◽  
Vol 5 (3) ◽  
pp. 630-631 ◽  
Author(s):  
Togo Kudo ◽  
Hideki Aoyagi ◽  
Hideaki Shiwaku ◽  
Yoshiharu Sakurai ◽  
Hideo Kitamura
Keyword(s):  
Processing System ◽  
Measuring System ◽  
Signal Processing System ◽  
Beam Position ◽  
X Ray ◽  
Current Voltage ◽  
Highly Sensitive ◽  
Position Data ◽  
Current Measuring ◽  
A Current

A sensitive current-measuring system is required to construct a highly sensitive X-ray beam-position monitor (XBPM). A current–voltage converter (I/V) which can measure currents between 0.1 nA and 10 mA was designed, and the signal processing system of the XBPM was constucted using this I/V. This system was used in beamline commissioning. Beam-position data standard deviations of σ ≃ 3 µm for the bending-magnet beamline, and σ x ≃ 3 µm and σ y ≃ 1 µm for the insertion-device beamline were obtained during the beamline commissioning.

When travellers’ expectations are not met

2020 ◽  
pp. 1-28
Author(s):  
María de la O Hernández-López
Keyword(s):  
Sharing Economy ◽  
Sensitive Information ◽  
Review System ◽  
Communicative Skills ◽  
Online System ◽  
Negative Valence ◽  
Rapport Management ◽  
Highly Sensitive ◽  
The Difference ◽  
Relational Concerns

Abstract In recent years, travellers have increasingly opted for sharing economy businesses, such as Airbnb. In contrast to other platforms for travellers, the Airbnb review system is characterised by its positivity bias, which implies that most of the users post enthusiastically positive reviews. Posting a negative review is the exception, which makes it a highly sensitive task in relational terms. In light of the above, this study aims to examine 60 reviews with negative valence in order to understand: first, which aspects of the experience make airbnbers feel dissatisfied; second, the extent to which relational concerns and authenticity make an impact on both dissatisfaction and rapport orientation; and third, how rapport concerns (i.e., face and rights and obligations) are managed in reviews with negative valence. The results show that a large number of users tried to repair rapport, while others neglected or challenged rapport. The difference in tone and intention was motivated by the presence/absence of the relational component (i.e., association rights), which had an impact on the varying importance given to other faults. The present study intends to bring to the fore the importance of rapport management when posting sensitive information in an online system in which the management of communicative skills lies at its core.

scholarly journals Preliminary Study on the Model of Thermal Laser Stimulation for Defect Localization in Integrated Circuits

2020 ◽  
Vol 10 (23) ◽  
pp. 8576
Author(s):  
Han Yang ◽  
Rui Chen ◽  
Jianwei Han ◽  
Yanan Liang ◽  
Yingqi Ma ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Induced Resistance ◽  
Seebeck Effect ◽  
Comprehensive Model ◽  
Induced Voltage ◽  
Efficient Technology ◽  
Resistance Change ◽  
Scanning Velocity ◽  
Laser Stimulation ◽  
Defect Localization

Thermal Laser Stimulation (TLS) is an efficient technology for integrated circuit defect localization in Failure Analysis (FA) laboratories. It contains Optical Beam-Induced Resistance Change (OBIRCH), Thermally-Induced Voltage Alteration (TIVA), and Seebeck Effect Imaging (SEI). These techniques respectively use the principle of laser-induced resistance change and the Seebeck effect. In this paper, a comprehensive model of TLS technology is proposed. Firstly, the model presents an analytical expression of the temperature variation in Integrated Circuits (IC) after laser irradiation, which quantificationally shows the positive correlation with laser power and the negative correlation with scanning velocity. Secondly, the model describes the opposite influence of laser-induced resistance change and the Seebeck effect in the device. Finally, the relationship between the current variation measured in the experiment and other parameters, especially the voltage bias, is well explained by the model. The comprehensive model provides theoretical guidance for the efficient and accurate defect localization of TLS technology.

scholarly journals Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP

2021 ◽  
Vol 55 (10) ◽  
pp. 890
Author(s):  
В.А. Беляков ◽  
И.В. Макарцев ◽  
А.Г. Фефелов ◽  
С.В. Оболенский ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Inp Substrate ◽  
Current Voltage ◽  
Unity Gain

High electron mobility transistors (HEMTs) have been developed based on InAlAs/InGaAs heterostructures on an InP substrate, with a transconductance of about 1000 mS/mm, a reverse breakdown voltage of more than 10 V and a unity-gain cutoff frequency is 140 GHz. In addition, HEMT transistors based on AlGaAs/InGaAs/GaAs heterostructures on a GaAs substrate with double gate recessing technology have been developed. This transistors demonstrate a maximum measured transconductance of the current-voltage characteristic of 520 mS/mm, a maximum drain current of 670 mA/mm, and a gate-drain breakdown voltage of 14 V and a unity-gain cut-off frequency is 120 GHz. Due to the increased breakdown voltage, the developed transistors have been used in monolithic integrated circuits of millimeter-wave power amplifiers with an output power of more than 110 mW.

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