A Novel Fault Isolation Technique for Identifying Deep Sub-Micron Defects

2003 ◽  
Author(s):  
Fayik M. Bundhoo ◽  
Soundaranathan Kasivisvanatha
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Fault Isolation ◽  
Crystalline Lattice ◽  
Isolation Technique ◽  
Silicon Lattice ◽  
Root Cause ◽  
Wet Chemical ◽  
Metal Layers

Abstract A novel failure analysis approach has been developed to isolate and characterize deep sub micron defects in P<100>- silicon lattice. This technique utilizes unique wet chemical deprocessing and side wall cleaning in conjunction with focused ion beam milling to isolate a single vertical failing DMOS source contact from a parallel array of 462K contacts covered with oxide dielectric and top metal layers. The two methods of analysis and root cause of crystalline lattice dislocation in a vertical DMOS transistor are discussed. TEM examination of implanted dopant interface was carried out in order to determine the nature and origin of lattice dislocations. A study1 indicates that lattice dislocations are generated by deep boron and arsenic implants that are not adequately annealed. In our analysis, these dislocations were observed as loop pairs causing low-level leakage that did not initially allow the part to fail. However, these silicon lattice dislocations do pose reliability issues.

Magnetic Head Shorting Failure Analysis

2017 ◽  
Author(s):  
Liang Hong ◽  
Jia Li ◽  
Haifeng Wang
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Resistance Change ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Failure Analysis ◽  
Metal Layers

Abstract This paper provides an innovative root cause failure analysis method that combines multiple failure analysis (FA) techniques to narrow down and expose the shorting location and allow the material analysis of the shorting defect. It begins with a basic electrical testing to narrow down shorting metal layers, then utilizing mechanical lapping to expose over coat layers. This is followed by optical beam induced resistance change imaging to further narrow down the shorting location. Scanning electron microscopy and optical imaging are used together with focused ion beam milling to slice and view through the potential shorting area until the shorting defect is exposed. Finally, transmission electron microscopy (TEM) sample is prepared, and TEM analysis is carried out to pin point the root cause of the shorting. This method has been demonstrated successfully on Western Digital inter-metal layers shorting FA.

Application of Focused Ion Beam System as A Defect Localization and Root Cause Analysis Tool

2001 ◽  
Author(s):  
C.C. Ooi ◽  
K.H. Siek ◽  
K.S. Sim
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Analysis Tool ◽  
Root Cause ◽  
Beam System ◽  
Defect Localization ◽  
Challenging Environment ◽  
Microprocessor Technology

Abstract Focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects post electrical fault isolation. In this highly competitive and challenging environment prevalent today, failure analysis throughput time is of utmost important. Therefore quick, efficient and reliable physical failure analysis technique is needed to avoid potential issues from becoming bigger. This paper will discuss the applications of FIB as a defect localization and root cause determination tool through the passive charge contrast technique and pattern FIB analysis.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2015 ◽  
Vol 2015 (1) ◽  
pp. 000469-000473 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

scholarly journals Fast and Effective Sample Preparation Technique for Backside Fault Isolation on GaN Packaged Devices

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Photon Emission ◽  
Fault Isolation ◽  
Preparation Technique ◽  
Laser Marking ◽  
Sample Preparation Technique ◽  
P Type ◽  
Metal Layers

Abstract This paper describes a fast and effective sample preparation method to allow backside fault localization on GaN package devices. Backside analysis by Photon Emission Microscopy (PEM) is becoming preferable to frontside analysis when the die is covered by metal layers. This paper describes an optimized method for backside sample preparation on GaN package devices having a thick heavily doped p-type silicon substrate. The method combines mechanical and chemical deprocessing steps, resulting in a fast and effective sample preparation technique for PEM analysis. Additionally, the laser marking process parameters to facilitate orientation during the final physical failure analysis by Focused Ion Beam (FIB) are also shared.

Defect Localization and Root Cause Analysis on e-Fuse Read Reliability Failure

2014 ◽  
Author(s):  
Hung Chin Chen ◽  
Chih Yang Tsai ◽  
Shih Yuan Liu ◽  
Yu Pang Chang ◽  
Jian Chang Lin
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cause Analysis ◽  
Root Cause ◽  
Failure Location ◽  
Rate Of Failure

Abstract Fault isolation is the most important step for Failure Analysis (FA), and it is closely linked with the success rate of failure mechanism finding. In this paper, we will introduce a case that hard to debug with traditional FA skills. In order to find out its root cause, several advanced techniques such as layout tracing, circuit edit and Infrared Ray–Optical Beam Induced Resistance Change (IR-OBIRCH) analysis had been applied. The circuit edit was performed following layout tracing for depositing probing pads by Focused Ion Beam (FIB). Then, IR-OBIRCH analysis with biasing on the two FIB deposited probing pads and a failure location was detected. Finally, the root cause of inter- metal layer bridge was found in subsequent physical failure analysis.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2014 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

Abstract In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

scholarly journals FA Approach on MIM (Metal-Insulator-Metal) Capacitor Failures

2021 ◽  
Author(s):  
Kuang Shien Lee ◽  
Lai Khei Kuan
Keyword(s):  
Computer Aided Design ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Metal Insulator ◽  
Isolation Techniques ◽  
Metal Insulator Metal ◽  
The Difference ◽  
Voltage Contrast ◽  
Metal Layers

Abstract MIM (Metal-Insulator-Metal) capacitor is a capacitor fabricated between metal layers and usually in an array form. Since it is usually buried within stack of back-end metal layers, neither front side nor backside FA fault isolation techniques can easily pinpoint the defect location of a failing MIM capacitor. A preliminary fault isolation (FI) often needs to be performed by biasing the desired failing state setup to highlight the difference(s) of FI site(s) between failing unit & reference. Then, a detailed study of the CAD (Computer Aided Design) schematic and die layout focusing on the difference(s) of FI site(s) will lead to a more in-depth analyses such as Focused Ion-Beam (FIB) circuit edit, micro-probing/nano-probing, Voltage Contrast (VC) and other available FA techniques to further identify the defective MIM capacitor. Once the defective MIM capacitor was identified, FIB cross-section or delayering can be performed to inspect the physical defect on the MIM capacitor. This paper presents the FA approach and challenges in successfully finding MIM capacitor failures.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

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