scholarly journals Effect of Sintering Temperature on the Characteristics of Zn0.99Li0.01O Thin Film on Si Substrate

2020 ◽  
Vol 58 (4) ◽  
pp. 257-262
Author(s):  
Gang Bae Kim ◽  
June Won Hyun
Keyword(s):  
Zinc Oxide ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Stable Solution ◽  
Ultra Violet ◽  
Green Emission ◽  
Red Shift ◽  
Crystal Phase ◽  
Zno Films ◽  
Violet Emission

Lithium-doped zinc oxide (Zn0.99Li0.01O) film was manufactured by the sol-gel method using uniform and stable solution of zinc acetate dehydrate and lithium acetate dehydrate in methanol. Films were deposited by spin-coating using spinner between 4500 and 5000 rpm on silicon substrates. The prepared samples were sintered at various temperatures (600 oC ~ 1000 oC) in the air. The structural, morphological, and optical properties of the prepared lithium-doped ZnO films were investigated. The XRD pattern of Zn0.99Li0.01O film demonstrated the hexagonal wurzite structure. However, new crystal phase was discovered at a sintering temperature of 800 oC. New peak was found near 2θ = 22.6o in XRD patterns. The peak is thought to be the (101) plan in SiO2 cristobalite structure. Moreover, another new crystal phase related to Li2SiO5 was occurred at a sintering temperature of 900 oC. From XRD analysis, it was confirmed that C axis was decreased and the stress was increased, as sintering temperatures was increased from 600 oC to 900 oC. In cathodo luminescence (CL) data, zinc oxide usually appears ultra violet and green emission. However, the green emission did not appear in all these samples used in this study. The ultra violet emission showed red shift from 600 oC to 800 oC in the CL spectrum as the sintering temperature was increased. The phenomenon of the red shift can be explained in Burstein-Moss effect. At sintering temperature of 700 oC, the intensity of ultra-violet emission was the largest and full width at half maximum (FWHM) was the smallest.

Wet Oxidation: A Promising Way for Fabrication of Zinc Oxide Nanostructures

2006 ◽  
Vol 522-523 ◽  
pp. 277-284 ◽  
Author(s):  
Wei Gao ◽  
Zheng Wei Li
Keyword(s):  
Zinc Oxide ◽  
Ultra Violet ◽  
Zno Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Zinc Oxide Nanostructures ◽  
Violet Emission ◽  
Red Color ◽  
Controllable Growth ◽  
Porous Oxide

A two-step deposition-oxidation method was successfully developed to fabricate zinc oxide thin films and nanostructures. Morphological observations clearly showed that a controllable growth of dense/porous oxide films, nanowhiskers, nanowires, and nanobelts could be obtained by controlling the deposition and oxidation conditions. Photoluminescence properties of the ZnO films were also studied. A strong and predominant ultra-violet near-band-edge emission could be observed on most of the samples, while a green or red color emission accompanying with a largely suppressed ultra-violet emission could be realized on the samples with different processing conditions. The results therefore indicated that ZnO films and structures with desirable microstructural and optical properties could be obtained with this deposition-oxidation technique under controllable conditions.

Synthesis of Zn0.2Ca0.8TiO3:0.1Pr3+ by Sol-Gel and its Luminescence Characterization

2013 ◽  
Vol 750-752 ◽  
pp. 877-880
Author(s):  
Yi Shen ◽  
Li Ying Han ◽  
Lu Yao Hou
Keyword(s):  
Treatment Process ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Ultra Violet ◽  
Luminescent Properties ◽  
Luminescent Materials ◽  
Excitation Spectra ◽  
Surface Appearance ◽  
Calcination Temperatures ◽  
Characteristic Emission

The Zn0.2Ca0.8TiO3:0.1Pr3+ luminescent materials were prepared by sol-gel technology. The phase transformation of gel was studied by TG-DTA and XRD in heat treatment process. The luminescent properties of phosphor in different calcination temperatures were determined by fluorescence spectrophotometer, and then the best sintering temperature was confirmed. The luminescent properties of phosphor was obtained through the emission/ excitation spectra. The surface appearance measured with SEM. The results showed that the nanoZn0.2Ca0.8TiO3:0.1Pr3+ phosphor could be obtained by sol-gel, sintering at 900°C. It sent out red fluorescent under the Ultra Violet. This characteristic emission peak at 614nm is associated with the typical 1D23H4 transition of Pr3+ion.

Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor

2010 ◽  
Vol 25 (4) ◽  
pp. 695-700 ◽  
Author(s):  
Young Hwan Hwang ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Cost ◽  
Sol Gel ◽  
Solution Process ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Oxide Thin Film ◽  
Zno Films ◽  
Electron Conduction

Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process. Precursor solution concentration, annealing temperature, and the process were controlled for the purpose of improving the electrical properties of ZnO TFTs and analyzed in terms of microstructural scope. The fabricated ZnO films show preferential orientation of the (002) plane, which contributes to enhanced electron conduction and a dense surface. The results show that the TFT characteristics of the film are clearly affected by the microstructure. The optimized TFT operates in a depletion mode, shows n-type semiconductor behavior, and is highly transparent (>90%) within the visible light range. It exhibits a channel mobility of 9.4 cm2/V·s, a subthreshold slope of 3.3 V/decade, and an on-to-off current ratio greater than 105. In addition, the result of N2 annealing shows the possibility of improvement in electrical property of the ZnO TFTs.

Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

2015 ◽  
Vol 734 ◽  
pp. 796-801 ◽  
Author(s):  
Ting Ting Wang ◽  
Miao Miao Dai ◽  
Ya Jun Yan ◽  
Hong Zhang ◽  
Yi Min Yu
Keyword(s):  
Hole Concentration ◽  
Sol Gel ◽  
Green Emission ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Zno Film ◽  
Oriented Growth ◽  
Coating Method ◽  
Thermal Annealing Process ◽  
P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

scholarly journals Derivation of GdxZn1-xO Film: The Effects of Gd Concentration on the Structural, Morphological and Optical Properties

2015 ◽  
Vol 773-774 ◽  
pp. 686-690
Author(s):  
Che Ani Norhidayah ◽  
Sharul Ashikin Kamaruddin ◽  
Nurul Fadzilah Ab Rasid ◽  
Nayan Nafarizal ◽  
S.N.M. Tawil ◽  
...  
Keyword(s):  
Sol Gel ◽  
Ultra Violet ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Oxide Semiconductor ◽  
Visible Range ◽  
Zno Films ◽  
Hexagonal Wurtzite Crystal Structure ◽  
Atomic Force ◽  
Device Applications

In recent years there has been renewed interest in zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. Doping ZnO with various elements has been a popular technique to gain the extrinsic properties for device applications. In this work we have studied the effect of Gadolinium (Gd) concentration on properties of sol–gel derived Gd doped ZnO films. The Gd concentration varying from 1 to 8 atomic percent (at.%). The structural, morphological and optical analyses were monitored by (XRD, Bruker D8 Advance), atomic force microscope (AFM, Tenko XE-100) and ultra violet-visible spectrophotometer (UV-Vis, Shimadzu UV 1800), respectively. Observations from the XRD results showed that all films exhibit the hexagonal wurtzite crystal structure and higher peak intensity observed at (002) peak. Based on XRD analysis, we also found that Gd concentration has a significant effect on the crystallite size and strain of the films. Moreover, the AFM analysis revealed that the surface become more uniform and denser as the Gd concentration increased. In addition, the optical transmittance spectra indicate that all films were highly transparent (>90%) in the visible range which slightly improved with increasing Gd concentration. The detail explanation on the mechanism will be discussed in detail in this paper.

Effect of Annealing Temperature on the Optical and Structural Properties of Ge Doped ZnO Films

2011 ◽  
Vol 304 ◽  
pp. 79-83
Author(s):  
Dong Hua Fan ◽  
Kai Zhen Huang ◽  
Yu Bao Huang
Keyword(s):  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Free Exciton ◽  
Ultra Violet ◽  
Zno Films ◽  
Violet Emission ◽  
X Ray ◽  
High Annealing ◽  
Doped Zno

Ge doped ZnO films were synthesized on silicon substrate via RF magnetron co-sputtering methods. The effects of annealing temperature on the optical and structural properties of the Ge doped ZnO films were investigated by means of photoluminescence spectra, X-ray diffraction, and X-ray Photoelectron Spectroscopy. The ultra-violet emission should be related with the free-exciton recombination, and blue and yellow emissions should be attributed to the defect state caused by Ge. The varieties of annealing temperature affect greatly the optical properties. The high annealing temperature leads to the oxidation of Ge and the formation of Zn2GeO4, which could lead to the change of PL spectra.

Preparation of Coated ZrSiO4-ZrB2 Using Sol-Gel Method and its Oxidation Resistance

2017 ◽  
Vol 727 ◽  
pp. 947-952 ◽  
Author(s):  
Meng Chen ◽  
Jun Guo Li ◽  
Hai Tao Yang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
High Temperature ◽  
Oxidation Resistance ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Holding Time ◽  
Crystal Phase ◽  
Catalytic Hydrolysis ◽  
Gel Method ◽  
Sol Gel Method ◽  
Testing Techniques

In this paper, coated ZrSiO4-ZrB2 powder was prepared by sol-gel method. The ZrSiO4 coating can improve the oxidation resistance of ZrB2 at high temperature. The effect of N (nZrSiO4/nZrB2), sintering temperature, holding time and catalytic hydrolysis condition of tetraethoxysilane (TEOS) on coated ZrSiO4-ZrB2 powder was discussed. The modern testing techniques such as XRD, SEM and TG-DSC were used to analyze the crystal phase compositions, microstructures and the oxidation resistance property. The results of experiments showed that the oxidation resistance of coated ZrSiO4-ZrB2 powder was excellent when N is 0.7, and TEOS is alkaline-catalyzed hydrolyzed.

Aluminum-Doped Zinc Oxide as Transparent Electrode Materials

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Electrode Materials ◽  
Sol Gel ◽  
Argon Plasma ◽  
Transparent Electrode ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.

Zinc Oxide Films and Nanowires Synthesized by Sol-Gel and Hydrothermal Methods and their Applications

2013 ◽  
Vol 815 ◽  
pp. 752-757
Author(s):  
Wei Wei ◽  
Chun Fu Zhang ◽  
Da Zheng Chen ◽  
Rui Gao ◽  
Zhi Zhe Wang
Keyword(s):  
Zinc Oxide ◽  
Solar Cell ◽  
Hydrothermal Method ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Films ◽  
Zinc Oxide Films ◽  
Coating Method ◽  
Different Characteristics ◽  
Hydrothermal Methods

In this paper, we studied the methods to synthesize good ZnO materials that can be applied in real environment. First we used spin coating method to form a layer of sol-gel driven ZnO, and then a hydrothermal method was used to synthesize nanowires of ZnO on the already obtained ZnO films. Some methods of test, including AFM and SEM, were performed to analyze the different characteristics of the material. Finally, their applications in the fields of TFT and solar cell were studied. We find that the ZnO films and nanowires are good in quality and their applications in TFT and solar cell are satisfactory.

Effects of Ageing Time of ZnO Sol on Properties of ZnO Films by Sol Gel Spin Coating

2014 ◽  
Vol 925 ◽  
pp. 329-333 ◽  
Author(s):  
Che Ani Norhidayah ◽  
Sharul Ashikin Kamaruddin ◽  
Nayan Nafarizal ◽  
Siti Nooraya Mohd Tawil ◽  
Mohd Zainizan Sahdan
Keyword(s):  
Spin Coating ◽  
Ageing Time ◽  
Sol Gel ◽  
Ultra Violet ◽  
Cost Effective ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Visible Range ◽  
Zno Films ◽  
Synthesis Methods

In recent years, there are many techniques developed to synthesize zinc oxide (ZnO) films. However, among the synthesis methods available, sol-gel has the most advantageous which offers cost effective features. In the present work, ZnO films were prepared by solgel spin coating technique. The effects of solution ageing times which varies at 2h 15 min, 3h 30 min and 24h were investigated. The structural, morphological and optical properties were studied using an x-ray diffractometer (XRD, Bruker D8 Advance), atomic force microscope (AFM, Tenko XE-100) and ultra violet-visible spectrophotometer (UV-Vis, Shimadzu UV 1800), respectively. Based on the XRD measurement, it was revealed that ZnO films were polycrystalline with hexagonal wurtzite structure. The crystallite size is in the range of 34.4 ~ 28 nm which decreased with ageing time increment. On the other hand, the AFM analysis revealed that the surface roughness of the films increased due to the increment of ageing times. Optical transmittance spectra indicate that all films were transparent (>75%) in the visible range which slightly improved with increasing of ageing times. The optical band gap was estimated to be around 3.24 ~3.26 eV using Taucs plot. We revealed that the ageing time of ZnO sol influenced the material properties of ZnO films. Based on our finding we proposed that 24h ageing time is optimum for the fabrication of high quality ZnO films.

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