scholarly journals Pomegranate Fruit Growth and Skin Characteristics in Hot and Dry Climate

2021 ◽  
Vol 12 ◽  
Author(s):  
Mukul Joshi ◽  
Ze’ev Schmilovitch ◽  
Idit Ginzberg
Keyword(s):  
Growth Rate ◽  
Elastic Modulus ◽  
Growth Parameters ◽  
High Growth ◽  
Growth Period ◽  
Fruit Growth ◽  
Temperate Climate ◽  
Rapid Phase ◽  
Immature Fruit ◽  
Pomegranate Fruit

Pomegranate (Punica granatum L.) fruit is well known for its health-beneficial metabolites. The pomegranate peel consists of an inner thick spongy white tissue, and an outer smooth skin layer that accumulates anthocyanins in red cultivars when ripe. The skin is made up of epidermis cells covered by a cuticle, the latter being the first target of cracking and russeting. The present study focuses on the effect of Israel’s hot and dry climate on pomegranate growth, to elucidate the derived effects on fruit skin characteristics and its putative resistance to the building pressure from fruit expansion. Experiments were conducted for four years, in four orchards located in different regions of the country, each with a different typical microclimate. Fruit-growth parameters were followed using remote-sensing tools, microscopic study, and mineral analysis of the skin, followed by determination of the peel’s elastic modulus. Fruit expanded in two phases: a short rapid phase followed by a gradual phase with a sigmoidal growth-rate pattern. Extreme hot and dry climate during the period of maximal growth rate was associated with restricted growth and a high proportion of small-size fruit. Anatomical study indicated that the skin of mature pomegranate fruit is made up of epidermal cells that are relatively flat and spaced apart, and is expected to be less durable against internal pressure. In contrast, skin of early immature fruit has two layers of dense and rounded epidermis, and is expected to be more resistant to cracking. Tensile strength studies confirmed this trend—skin of mature fruit had a lower elastic modulus than young fruit. However, restrained growth due to extreme environmental cues may result in better resistance of the mature pomegranate fruit to cracking, and in better skin quality and appearance, albeit small fruits. On the other hand, temperate climate at the beginning of the growth period, which allows high growth rate and high daily shrinkage, leads to pomegranate skin disorders.

The assessment of seasonal yield using some Stylosanthes guyanensis accessions in humid tropical and sub-tropical environments

1977 ◽  
Vol 17 (86) ◽  
pp. 425 ◽  
Author(s):  
LA Edye ◽  
WT Williams ◽  
RL Burt ◽  
B Grof ◽  
SL Stillman ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Growth Period ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Growth Patterns ◽  
Seasonal Growth ◽  
Seasonally Dry ◽  
Tropical Environments ◽  
Dry Tropics

The seasonal growth patterns of some S. guyanensis accessions were compared in three humid environments at South Johnstone (extended rainfall tropics), 'Heathlands' (seasonally dry tropics) and Cooroy (humid sub-tropics). The accessions were selected mainly for their productivity in previously described small mown sward experiments over three years at each site. Previous methods of presenting seasonal growth patterns are reviewed, and a new, simpler method of presentation is defined. Growth was highly seasonal at all sites. There was no growth during July to November at 'Heathlands' and Cooroy due to moisture and temperature limitations respectively. At South Johnstone growth was continuous but depressed in August and December with limitations due to both soil moisture and temperature: the maximum growth rate was 22 times the minimum growth rate. The accessions differed markedly in their growth patterns at each site. In general, the yield differences between accessions were greater at the beginning and end of the growing season than during the peak growth period. The highest yielding accessions at each site had high growth rates spread over a long period. The yield distribution and persistence of Q8231 and 46589C seemed superior to existing cultivars in tropical and sub-tropical environments respectively

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

2019 ◽  
Vol 963 ◽  
pp. 131-135
Author(s):  
Shi Yang Ji ◽  
Ryoji Kosugi ◽  
Kazutoshi Kojima ◽  
Kohei Adachi ◽  
Yasuyuki Kawada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Growth Parameters ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Flow Rates ◽  
Cvd Growth ◽  
Carrier Gases

By inspecting the CVD growth parameters, such as the flow rates of HCl and H2 carrier gases, the pressure and the C/Si ratio, the trench filling in a high-rate mode with a high growth rate on the bottom and a relatively low growth rate on the mesa top was carried out. 4H-SiC trenches with the depths of 48 and 55 μm have been completely filled at the rates of 6.2 and 5.5 μm/h, respectively.

scholarly journals Development of a Fruitlet Growth Model to Predict Thinner Response on Apples

HortScience ◽  
2013 ◽  
Vol 48 (5) ◽  
pp. 584-587 ◽  
Author(s):  
Duane W. Greene ◽  
Alan N. Lakso ◽  
Terence L. Robinson ◽  
Phillip Schwallier
Keyword(s):  
Growth Rate ◽  
Fruit Set ◽  
Growth Period ◽  
Fruit Growth ◽  
Series Of Experiments ◽  
Individual Trees ◽  
Viable Method ◽  
Final Effect ◽  
June Drop ◽  
Measurement Period

Previous reports have provided evidence that measuring fruit growth rate may be a viable method to predict if a fruit will abscise or persist through the June drop period. A series of experiments were carried out over several years to develop a procedure that could be used to predict the response to a chemical thinner application within 7 to 8 days after application and before thinners exhibit their final effect. The procedure developed involves tagging 105 spurs on seven individual trees distributed appropriately in the orchard. A minimum of two measurements must be made, one 3 to 4 days after application and again 7 to 8 days after application. This model requires that fruit measurement should not start before fruit grow to a diameter of 6 mm and individual fruit within a spur should be numbered and identified. The model is based on the assumption that if fruit growth rate of a particular fruit over the measurement period is less than 50% of the growth rate of the fastest growing fruit on the tree during the same growth period, it will abscise, whereas if fruit growth rate exceeds 50% of the growth rate of the fastest growing fruit, it will persist. All data can be entered into an Excel spreadsheet and the output in the summary page gives the predicted fruit set expressed as percentage of the total number of fruit present. The strategy for crop load adjustment with chemical thinners has evolved over the years to a point where most orchardists plan and are prepared to make two or more thinner applications. The dilemma associated with this approach is to determine if additional thinner applications are necessary. Up to this point a tool designed specifically to provide this information has not been developed.

scholarly journals Fruit Diameter and Daily Fruit Growth Rate of Three Apple Cultivars on Rootstock–Scion Combinations

HortScience ◽  
1994 ◽  
Vol 29 (2) ◽  
pp. 79-81 ◽  
Author(s):  
Ismail A. Hussein ◽  
Donald C. Slack
Keyword(s):  
Growth Rate ◽  
Growth Period ◽  
Fruit Growth ◽  
Arid Climate ◽  
Cultivar Differences ◽  
Growing Seasons ◽  
Apple Cultivars ◽  
Fruit Diameter

The effect of three vigor-control apple (Malus domestics Borkh.) rootstock (seedling, MM.106, and M.7a) on fruit diameter of three cultivars ('Red Delicious', `Granny Smith', and `Gala') was studied over two growing seasons (1990-91) in the arid climate of Willcox, Ariz. Daily fruit growth rate (DFGR) and effective fruit growth period (EFGP) data indicate cultivar differences in DFGR as well as EFGP. Cultivars with a high DFGR had a relatively shorter EFGP. Rootstock had no significant effect on EFGP. Cultivar x rootstock interaction on fruit diameter was significant for DFGR, but not for EFGP. `Red Delicious' and `Granny Smith' trees produced larger fruits on MM.106 and M.7a than on seedling rootstock. For `Gala', there was no significant effect of all rootstock on fruit diameter.

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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