scholarly journals Distribution of the Deposition Rates in an Industrial-Size PECVD Reactor Using HMDSO Precursor

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1218
Author(s):  
Žiga Gosar ◽  
Denis Đonlagić ◽  
Simon Pevec ◽  
Bojan Gergič ◽  
Miran Mozetič ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Protective Coatings ◽  
Chemical Vapor ◽  
Rf Discharge ◽  
Gas Phase Reactions ◽  
Deposition Rates ◽  
Capacitively Coupled ◽  
Rf Discharges ◽  
Rotary Pumps ◽  
Order Of Magnitude

The deposition rates of protective coatings resembling polydimethylsiloxane (PDMS) were measured with numerous sensors placed at different positions on the walls of a plasma-enhanced chemical vapor deposition (PECVD) reactor with a volume of approximately 5 m3. The plasma was maintained by an asymmetric capacitively coupled radiofrequency (RF) discharge using a generator with a frequency 40 kHz and an adjustable power of up to 8 kW. Hexamethyldisiloxane (HMDSO) was leaked into the reactor at 130 sccm with continuous pumping using roots pumps with a nominal pumping speed of 8800 m3 h−1 backed by rotary pumps with a nominal pumping speed of 1260 m3 h−1. Deposition rates were measured versus the discharge power in an empty reactor and a reactor loaded with samples. The highest deposition rate of approximately 15 nm min–1 was observed in an empty reactor close to the powered electrodes and the lowest of approximately 1 nm min–1 was observed close to the precursor inlet. The deposition rate was about an order of magnitude lower if the reactor was fully loaded with the samples, and the ratio between deposition rates in an empty reactor and loaded reactor was the largest far from the powered electrodes. The results were explained by the loss of plasma radicals on the surfaces of the materials facing the plasma and by the peculiarities of the gas-phase reactions typical for asymmetric RF discharges.

scholarly journals Deposition Kinetics of Thin Silica-Like Coatings in a Large Plasma Reactor

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3238 ◽  
Author(s):  
Žiga Gosar ◽  
Denis Đonlagić ◽  
Simon Pevec ◽  
Janez Kovač ◽  
Miran Mozetič ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Plasma Reactor ◽  
Chemical Vapor ◽  
Processing Parameters ◽  
Ion Density ◽  
Capacitively Coupled ◽  
Rotary Pumps ◽  
Kinetics Of ◽  
Radio Frequency Discharge ◽  
Deposited Films

An industrial size plasma reactor of 5 m3 volume was used to study the deposition of silica-like coatings by the plasma-enhanced chemical vapor deposition (PECVD) method. The plasma was sustained by an asymmetrical capacitively coupled radio-frequency discharge at a frequency of 40 kHz and power up to 7 kW. Hexamethyldisilioxane (HMDSO) was introduced continuously at different flows of up to 200 sccm upon pumping with a combination of roots and rotary pumps at an effective pumping speed between 25 and 70 L/s to enable suitable gas residence time in the plasma reactor. The deposition rate and ion density were measured continuously during the plasma process. Both parameters were almost perfectly constant with time, and the deposition rate increased linearly in the range of HMDSO flows from 25 to 160 sccm. The plasma density was of the order of 1014 m−3, indicating an extremely low ionization fraction which decreased with increasing flow from approximately 2 × 10−7 to 6 × 10−8. The correlations between the processing parameters and the properties of deposited films are drawn and discussed.

Rapid Growth of Ceramic Films by Particle-Vapor Codeposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Robert H. Hurt ◽  
Mark D. Allendorf
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Ceramic Films

AbstractParticle-enhanced chemical vapor deposition (PECVD) is capable of producing ceramic films at high deposition rates. A mathematical model of the particle-vapor codeposition process has been developed and has been applied to PECVD processes to predict deposition rate enhancements and deposit properties.

Mechanical Properties and Morphology of Polycrystalline 3C-SiC Films Deposited on Si and SiO2 by LPCVD

2003 ◽  
Vol 795 ◽  
Author(s):  
Xiao-an Fu ◽  
Jeremy Dunning ◽  
Srihari Rajgopal ◽  
Ming Zhang ◽  
Christian A. Zorman ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Flow Rate ◽  
Chemical Vapor ◽  
Tem Analysis ◽  
Deposition Rates ◽  
Si Substrates ◽  
Compressive Stresses ◽  
Rate Versus ◽  
Slope Change ◽  
Sic Films

ABSTRACTPoly-SiC films were deposited on Si and SiO2 substrates in a high-throughput, low pressure chemical vapor deposition (LPCVD) furnace using dichlorosilane (DCS) and acetylene precursors. The deposition temperature and pressure were fixed at 900°C and 2 Torr, respectively, while the flow rate of DCS was varied between 18 and 54 sccm. Poly-SiC deposition rates on both Si and SiO2 were nearly identical to each other and increased as a function of DCS flow rate. Consistent with both substrate materials, the following observations were made. A slope change of the deposition rate versus DCS flow rate was observed around a DCS flow rate of 35 sccm. Residual stress varied with respect to the deposition rate, with tensile stresses occurring at lower deposition rates and compressive stresses at higher deposition rates. The tensile-to-compressive stress transition corresponded to the slope change of the deposition rate versus DCS flow rate. The surface morphology consisted of pyramidal grains, as observed under an SEM. TEM analysis for poly-SiC films grown on Si substrates showed that microstructural differences exist for poly-SiC films having tensile and compressive stresses.

The Influence of Magnetic Fields on the Properties of Amorphous Carbon Prepared by Plasma Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
R. H. Jarman ◽  
A. T. Howe
Keyword(s):  
Magnetic Field ◽  
Amorphous Carbon ◽  
Plasma Deposition ◽  
Protective Coatings ◽  
Carbon Films ◽  
Rf Discharge ◽  
Capacitively Coupled ◽  
Amorphous Carbon Films ◽  
Wide Range ◽  
Electrical Conductivities

ABSTRACTAmorphous carbon films exhibit a wide range of optical, electrical and mechanical properties which make them candidates for a number of applications such as protective coatings and insulators in electronic devices. We describe the effects of a magnetic field applied at the powered electrode in a capacitively coupled rf discharge on the optical and electrical properties of amorphous carbon films deposited on substrates mounted on both electrodes. In the case of substrates placed on the powered electrode, the film properties appear to be very sensitive to the magnetic field strength. At the highest magnetic field, the deposition rates are very much higher than those obtained in the absence of a magnetic field. The optical gap varies from 1.1 eV to 2.7 eV depending on the deposition conditions. The electrical conductivities of the films are very low and show a complex dependence on the applied electric field.

Real Time Spectroscopic Ellipsometry of Amorphous Silicon Grown at High Deposition Rates by Hot-Wire CVD

2002 ◽  
Vol 715 ◽  
Author(s):  
Brent P. Nelson ◽  
Dean H. Levi
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Deposition Rate ◽  
Spectroscopic Ellipsometry ◽  
Chemical Vapor ◽  
Early Time ◽  
Growth Conditions ◽  
General Tendency ◽  
Hot Wire ◽  
Deposition Rates

AbstractWe use real-time spectroscopic ellipsometry (RTSE) for in-situ characterization of the optical properties and surface roughness (Rs) of hydrogenated amorphous silicon (a-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) with varying deposition rates (5 to 120 Å/s). Early time evolution of the Rs during growth is remarkably similar for all deposition rates. During the first few Ås of growth, there is a sharp increase in Rs as the a-Si:H nucleates in separate islands. This is followed by a reduction of Rs as these areas coalesce into a bulk film, which occurs at an average thickness of 100 Å. After coalescence the Rs rises to a stable value that is dependent upon growth conditions with a general tendency for the Rs to increase with growth rate. However, neither the Rs nor the material electronic properties are unique for a given deposition rate. Films grown under high silane flow and low pressure have a better photoresponse and a lower Rs than films grown at the same deposition rate but with low silane flow and high pressure. We observe a stronger correlation of film properties with Rs than with deposition rate; namely a monotonic decrease in photo-response, and increase in optical gap, with increasing Rs.

High Deposition Rate Pecvd Processes For Next Generation Tft-Lcds

1994 ◽  
Vol 345 ◽  
Author(s):  
J. F. M. Westendorp ◽  
H. Meiling ◽  
J. D. Pollock ◽  
D. W. Berrian ◽  
A. H. Laflamme ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Deposition Rate ◽  
Rf Discharge ◽  
High Yield ◽  
High Deposition Rate ◽  
Very High Frequency ◽  
Doped Semiconductors ◽  
Deposition Rates ◽  
Powder Formation ◽  
High Production

AbstractThe demand for lower cost per panel in TFT-LCD production is driving the PECVD market to deposition systems that combine high throughput and uptime with high yield. Today it is generally believed that a multichamber system that combines a number of single-panel deposition chambers is the best way to achieve these goals.For these PECVD systems to be economical, the deposition rate of a-Si:H, SiNx and SiO2 has to be in the 1200–1500 Å/min range. In 13.56 MHz parallel-plate glow discharge systems SiNx and SiO2 deposition rates exceeding 1500 Å/min are commonly achieved, whereas the deposition rate of a-Si:H is limited to 100–200 Å/min due to powder formation. Over the last 5 years significant progress has been made to increase the deposition rate of a-Si:H. Methods include the use of very-high-frequency glow discharge (VHF-GD) and pulsing of the rf discharge. However, substrate sizes never exceeded 100mm×100mm.We have developed a multichamber PECVD system for TFT-LCD production where VHFGD is used to obtain uniform high deposition rates for (doped) semiconductors and insulators, such as a-Si:H, n+ a-Si:H, SiNx and SiO2 over areas as large as 470mm×370mm. Even at deposition rates well above 1200 Å/min hydrogen in a-Si:H is exclusively bound as monohydride. The optoelectronic properties of the films are at least as good as those of their 13.56 MHz counterparts and thus good-quality TFTs can be obtained. At the same time the number of added particles is low allowing for high production yields.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

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