scholarly journals Annealing Studies of Copper Indium Oxide (Cu2In2O5) Thin Films Prepared by RF Magnetron Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1290
Author(s):  
Giji Skaria ◽  
Ashwin Kumar Kumar Saikumar ◽  
Akshaya D. Shivprasad ◽  
Kalpathy B. Sundaram
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Wavelength Region ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Annealing Temperatures ◽  
Copper Indium ◽  
Quartz Substrates

Copper indium oxide (Cu2In2O5) thin films were deposited by the RF magnetron sputtering technique using a Cu2O:In2O3 target. The films were deposited on glass and quartz substrates at room temperature. The films were subsequently annealed at temperatures ranging from 100 to 900 °C in an O2 atmosphere. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu2In2O5 phases along with CuInO2 or In2O3 for the films annealed above 500 °C. An increase in grain size was identified with the increase in annealing temperatures from the XRD analysis. The grain sizes were calculated to vary between 10 and 27 nm in films annealed between 500 and 900 °C. A morphological study performed using SEM further confirmed the crystallization and the grain growth with increasing annealing temperatures. All films displayed high optical transmission of more than 70% in the wavelength region of 500–800 nm. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4–3.6 eV during annealing.

scholarly journals Properties of RF Magnetron-Sputtered Copper Gallium Oxide (CuGa2O4) Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 921
Author(s):  
Ashwin Kumar Saikumar ◽  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Wavelength Region ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Morphological Studies ◽  
Increasing Trend ◽  
First Time ◽  
Post Deposition

Thin films of CuGa2O4 were deposited using an RF magnetron-sputtering technique for the first time. The sputtered CuGa2O4 thin films were post-deposition annealed at temperatures varying from 100 to 900 °C in a constant O2 ambience for 1.5 h. Structural and morphological studies were performed on the films using X-ray diffraction analysis (XRD) and a Field Emission Scanning Electron Microscope (FESEM). The presence of CuGa2O4 phases along with the CuO phases was confirmed from the XRD analysis. The minimum critical temperature required to promote the crystal growth in the films was identified to be 500 °C using XRD analysis. The FESEM images showed an increase in the grain size with an increase in the annealing temperature. The resistivity values of the films were calculated to range between 6.47 × 103 and 2.5 × 108 Ωcm. Optical studies were performed on all of the films using a UV-Vis spectrophotometer. The optical transmission in the 200–800 nm wavelength region was noted to decrease with an increase in the annealing temperature. The optical bandgap value was recorded to range between 3.59 and 4.5 eV and showed an increasing trend with an increase in the annealing temperature.

Effects of Annealing Temperature on Optical Properties of Bi3.4Nd0.6Ti3O12 Films by RF Magnetron Sputtering Method

2012 ◽  
Vol 503-504 ◽  
pp. 620-624
Author(s):  
Yan Zou ◽  
Qiu Xiang Liu ◽  
Yan Ping Jiang ◽  
Xin Gui Tang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures

Bi3.4Nd0.6Ti3O12 (BNT) thin films have been prepared on Si (100) substrate by RF magnetron sputtering method. The crystalline structures were studied by X-ray diffraction. The surface of the films have been observed by SEM. The reflectivity was measured by n & k Analyzer 2000 with the wavelength from 190 to 900 nm. The optical constant, thickness and the forbidden band gap were fitted. The results showed that with the annealing temperatures raised from 600 to 750 °C, the reflectivity index decreased from 2.224 to 2.039, and the forbidden band gap decreased from 3.19 to 2.99 eV. The possible mechanism of the effect of annealing temperature on the optical properties was discussed.

Synthesis and Properties of Nanocrystalline Copper Indium Oxide Thin Films Deposited by Rf Magnetron Sputtering

2008 ◽  
Vol 8 (8) ◽  
pp. 3889-3894 ◽  
Author(s):  
Mandeep Singh ◽  
V. N. Singh ◽  
B. R. Mehta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Indium Oxide ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Composite Target ◽  
Nanocrystalline Copper ◽  
X Ray ◽  
Copper Indium ◽  
Direct Band

Nanocrystalline copper indium oxide (CuInO2) thin films with particle size ranging from 25 nm to 71nm have been synthesized from a composite target using reactive Rf magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) combined with glancing angle X-ray diffraction (GAXRD) analysis confirmed the presence of delafossite CuInO2 phase in these films. The optical absorption studies show the presence of two direct band gaps at 3.3 and 4.3 eV, respectively. The resistance versus temperature measurements show thermally activated hopping with activation energy of 0.84 eV to be the conduction mechanism.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

2013 ◽  
Vol 873 ◽  
pp. 426-430
Author(s):  
Xian Wu Xiu ◽  
Li Xu ◽  
Cheng Qiang Zhang
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

GROWTH OF SPUTTERED-ALUMINUM OXIDE THIN FILMS ON Si (100) AND Si (111) SUBSTRATES WITH Al2O3 BUFFER LAYER

2016 ◽  
Vol 23 (03) ◽  
pp. 1650016
Author(s):  
WEI QIANG LIM ◽  
SUBRAMANI SHANMUGAN ◽  
MUTHARASU DEVARAJAN
Keyword(s):  
Thin Films ◽  
Aluminum Oxide ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Atomic Force ◽  
Section Analysis

Aluminum oxide (Al2O3) thin films with Al2O3 buffer layer were deposited on Si (100) and Si (111) substrates using RF magnetron sputtering of Al2O3 target in Ar atmosphere. The synthesized films were then annealed at the temperature of 400[Formula: see text]C, 600[Formula: see text]C and 800[Formula: see text]C in nitrogen (N2) environment for 6[Formula: see text]h. Structural properties and surface morphology are examined by using X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). XRD analysis indicated that different orientation of Al2O3 were formed with different intensities due to increase in the annealing temperature. From FESEM cross-section analysis results, it is observed that the thickness of films were increased as the annealing temperature increased. EDX analysis shows that the concentration of aluminum and oxygen on both the Si substrates increased with the increase in annealing temperature. The surface roughness of the films were found to be decreased first when the annealing temperature is increased to 400[Formula: see text]C, yet the roughness increased when the annealing temperature is further increased to 800[Formula: see text]C.

scholarly journals NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Savita Sharma ◽  
Monika Tomar ◽  
Nitin K. Puri ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Glass Substrates ◽  
Corning Glass ◽  
Interdigital Electrodes ◽  
Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

Investigation of Nanostructure and Optical Properties of Flexible AZO Thin Films at Different Powers of RF Magnetron Sputtering

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850062 ◽  
Author(s):  
Sh. Khatami ◽  
L. Fekri Aval ◽  
G. Behzadi Pour
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Structure Morphology ◽  
Xrd Patterns ◽  
Predominant Direction

In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.

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