scholarly journals Bio-Phototransistors with Immobilized Photosynthetic Proteins

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1709
Author(s):  
Arash Takshi ◽  
Houman Yaghoubi ◽  
Daniel Jun ◽  
J. Thomas Beatty
Keyword(s):  
Field Effect Transistor ◽  
Photosynthetic Bacteria ◽  
Core Complex ◽  
Donor Side ◽  
Low Light ◽  
Insulating Layer ◽  
Photosynthetic Proteins ◽  
Effect Transistor ◽  
The Difference ◽  
Light Capture

The efficient mechanism of light capture by photosynthetic proteins allows for energy transfer and conversion to electrochemical energy at very low light intensities. In this work, reaction center (RC) proteins, or a core complex consisting of the RC encircled by light harvesting (LH1) proteins (RC-LH1) from photosynthetic bacteria, were immobilized on an insulating layer of an ion-sensitive field-effect transistor (ISFET) to build bio-photodetectors. The orientation of the RC proteins was controlled via application of a hybrid linker made of 10-carboxydecylphosphonic acid and cytochrome c that anchored the RCs to their electron donor side. Bio-phototransistors consisting of either the core RC or the RC-LH1 core complex were tested under white and monochromic light. The difference between the dark and light currents at different wavelengths are well-matched with the absorption spectrum of the photosynthetic proteins. The results show potential for the use of photosynthetic proteins in photodetectors.

Epoxy Cure Monitoring With An Interdigitated Gate Electrode Field Effect Transistor (IGEFET)

1997 ◽  
Vol 503 ◽  
Author(s):  
E. S. Kolesar ◽  
J. M. Wiseman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Pulse Signal ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Gate Electrode ◽  
Electrode Structure ◽  
Difference Spectra ◽  
Effect Transistor ◽  
The Difference

ABSTRACTAn interdigitated gate electrode field-effect transistor (IGEFET) was designed, fabricated and used to monitor the cure of a common epoxy. The IGEFET sensor consists of an interdigitated gate electrode structure which is coupled to the gate contact of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET). The epoxy was deposited on the interdigitated gate electrode, and the IGEFET's electrical performance was observed as the epoxy cured. The cross-linking chemical reaction during epoxy cure caused electrical impedance changes that were quantified when the IGEFET was operated with a periodic voltage pulse signal. Charge transferred through the chemically-active epoxy is manifested as a temporally-dependent potential applied to the MOSFET's gate contact. By operating the MOSFET as a linear amplifier, a potential corresponding to the temporally-dependent gate voltage was directly measured at the amplifier's output. The Fourier transform of the IGEFET's time-domain response at specific time increments was computed. The resulting epoxy cure spectra were compared to a reproducible baseline spectrum, and an ensemble of difference spectra were computed to reveal the epoxy's chemical state at specific instances of time. The difference spectra features yield valuable information concerning the state of the epoxy's cure.

PREPARATION AND CHARACTERISTICS OF SCREEN-PRINTED CALCIUM ION SENSOR

2009 ◽  
Vol 21 (06) ◽  
pp. 381-384
Author(s):  
Jung-Chuan Chou ◽  
Ji-Hua Li ◽  
Tsung-Sum Lee
Keyword(s):  
Calcium Ion ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Ion Sensor ◽  
Radio Frequency Sputtering ◽  
M 10 ◽  
Selective Membrane ◽  
Effect Transistor ◽  
The Difference ◽  
Screen Printed

In this study, the ruthenium dioxide ( RuO2 ) thin film as sensing film of pH sensor was deposited on polyethylene terephthalate (PET) by radio frequency sputtering. The pH-sensor based on separative extended gate field effect transistor (SEGFET) was fabricated by screen-printed technology through two different fabrication methods. And the calcium ion selective membrane was dropped on sensing window of SEGFET to perform the calcium ion sensor. In addition, the difference between the two fabrication methods was studied, and the hysteresis effect of calcium ion sensor was analyzed in this study. At present, the pH-sensor has been fabricated successfully, its sensitivity and linearity are 60.36 mV/pH and 0.999 from pH1 to pH11 at 30°C, respectively. As well as the sensitivity and linearity of calcium ion sensor are 27.71 mV/pCa and 0.987 in the range of 1 M–10-4 M CaCl2 solutions, respectively.

Al2O3 Obtained through Resistive Evaporation for Use as Insulating Layer in Transparent Field Effect Transistor

2014 ◽  
Vol 975 ◽  
pp. 248-253 ◽  
Author(s):  
Miguel Henrique Boratto ◽  
Luis Vicente de Andrade Scalvi ◽  
Diego Henrique de Oliveira Machado
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Insulating Layer ◽  
X Ray ◽  
Effect Transistor ◽  
Good Agreement

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

FIELD-EFFECT TRANSISTOR STRUCTURES WITH QUASI-ONE-DIMENSIONAL CHANNEL

2004 ◽  
Vol 03 (01n02) ◽  
pp. 161-170 ◽  
Author(s):  
SLAVA V. ROTKIN ◽  
HARRY E. RUDA ◽  
ALEXANDER SHIK
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drift Diffusion Model ◽  
Semiconductor Nanowire ◽  
One Dimensional ◽  
Analytic Expressions ◽  
Effect Transistor ◽  
The Difference ◽  
Electrostatic Calculations ◽  
Unified Description

Drift–diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

Development of Carbon-Nanotube Composite Thread and its Application to "Thread Transistor"

2014 ◽  
Vol 95 ◽  
pp. 38-43
Author(s):  
Masatoshi Yoshida ◽  
Takahide Oya
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Insulating Layer ◽  
Source Current ◽  
Effect Transistor ◽  
Carbon Nanotube Composite ◽  
Conductive Paint

We propose development of a novel functional thread that contains carbon nanotubes (CNTs), i.e., a CNT-composite thread (CNTCT), and of a "thread transistor." The CNT is expected to be a next-generation material because it has a lot of useful characters, e.g., it can have both metallic and semiconducting characteristics. Thread is flexible and an everyday material. In our study, we succeeded in developing the CNTCT easily by dipping thread in CNT dispersion like dyeing. Here, we also developed and demonstrated a novel type of field-effect transistor (FET), i.e., the thread transistor. To do this, we prepared a metallic (M) and a semiconducting (S) CNTCT. The S-CNTCT was coated with a non-conductive paint as an insulating layer for simplicity. To construct the thread transistor, we tensed the S-CNTCT that plays the role of a channel for the FET and tied the M-CNTCT around the S-CNTCT as a gate electrode. The source and drain electrodes can also be materialized by tying the M-CNTCTs. As a result of measurement, a drain-to-source current could be measured on the order of micro-amperes. Moreover, the current could be controlled by the gate voltage.

scholarly journals Silicon Carbide MESFET High Frequency Oscillator for Microwave Applications

2019 ◽  
Vol 6 (2) ◽  
pp. 1-4
Keyword(s):  
Silicon Carbide ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Frequency Oscillator ◽  
Output Response ◽  
Frequency Oscillator ◽  
Effect Transistor ◽  
Microwave Applications ◽  
The Difference

The Gouriet oscillator is mainly dealing with 4H-SiC metal semiconductor field effect transistor is fabricated with HPSI substrate and passive integrated elements are based on design for demand of the required function of frequency 1GHz. This high frequency or temperature oscillator is operated from 30 to 200˚C, the gain of the delivered power of 21.8dbm at the frequency of 1GHz and the temperature of 200˚C. The oscillator transistor output response is at 200˚C, the improved percentage is 15%. This output response of the difference in between the frequency around the vary of temperature is less than 0.5%.

scholarly journals Исследование подвижности носителей заряда в слоях нанокристаллов PBS методом полевого транзистора

2022 ◽  
Vol 56 (2) ◽  
pp. 236
Author(s):  
П.С. Парфенов ◽  
Н.В. Бухряков ◽  
Д.А. Онищук ◽  
А.А. Бабаев ◽  
А.В. Соколова ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Inert Atmosphere ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers ◽  
Tetrabutylammonium Iodide ◽  
Effect Transistor ◽  
The Difference ◽  
Current Flows

The field-effect transistor method is used to study the mobility of charge carriers in layers of lead sulfide nanocrystals with ligands of tetrabutylammonium iodide and 1,2-ethanedithiol used to create solar cells. The difference between the operating of a transistor in ambient air and in an inert atmosphere is demonstrated. It is shown that, in the ambient air, the processes of charging nanocrystals are activated when current flows, and the influence of the polarization of the interface of nanocrystals and the insulator on the measurement of the mobility is analyzed. Different reactions of the layers with ligands to light have been demonstrated, showing a significant oxidation of the surface of nanocrystals treated with 1,2-ethanedithiol.

Analysis of Polymer Field Effect Transistor

2001 ◽  
Vol 665 ◽  
Author(s):  
Y. Roichman ◽  
N. Tessler
Keyword(s):  
Numerical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Structure ◽  
Two Dimensional ◽  
Time Resolved ◽  
Effect Transistor ◽  
Top Contact ◽  
The Difference ◽  
Insight Into

ABSTRACTWe compare two basic organic FET structures both experimentally and theoretically. By using time resolved analysis we gain insight into the mechanisms affecting the performance of these structures. Using a two dimensional numerical model we focus on the top contact structure and demonstrate the difference between the two structures.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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