scholarly journals An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 683
Author(s):  
Dakang Yuan ◽  
Yiming Zhang ◽  
Xuhong Wang
Keyword(s):  
Analytical Model ◽  
Good Accuracy ◽  
Experimental Measurements ◽  
Switching Speed ◽  
Fast Switching ◽  
Proposed Model ◽  
Oscillation Process ◽  
Simulation And Experiment ◽  
High Switching Speed ◽  
Voltage Switching

SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density of converters significantly. However, the fast switching processes of SiC MOSFETs cause serious crosstalk problems in bridge-arm configurations, which restricts the devices’ performances. This paper presents a detailed and accurate improved crosstalk analytical model, which takes into account the nonlinear capacitances, the parasitic inductances, the reverse recovery characteristics of the anti-parallel diodes, and the nonlinear voltage switching and damping oscillation process. The novelty of the proposed model lies in the fact that under the condition of comprehensively considering all these non-ideal factors of the bridge-arm, the effects of multi-parasitic elements and multi-variables coupling to the crosstalk are hierarchically divided. The parasitic elements and their correlations are described in detail and the direct and indirect variables’ impacts are clearly traced. Thus, according to the different variables switching stages, the influence processes of these parasitic elements and variables can be integrated and a complete equivalent analytical model of the crosstalk process can be derived. The simulation and experiment platforms are established and a series of experimental verifications and comparisons prove that the model can replicate experimental measurements of crosstalk with good accuracy and detail.

Conducted EMI Noise Prediction in DC Converter System for Electric Vehicle Application

2013 ◽  
Vol 325-326 ◽  
pp. 486-489 ◽  
Author(s):  
Zong Yu An ◽  
Quan Di Wang ◽  
Ya Li Zheng
Keyword(s):  
Equivalent Circuit ◽  
Buck Converter ◽  
Experimental Measurements ◽  
Noise Prediction ◽  
Frequency Range ◽  
Complex Approach ◽  
Proposed Model ◽  
Simulation And Experiment ◽  
Lumped Parameters ◽  
Conducted Emi

In this paper, common mode (CM) conducted perturbations are predicted and compared with experiments in a full-bridge transformer-isolated buck converter system, thanks to a complex approach based on experimental measurements and on the modeling of the complete equivalent circuit. Its different part are considered and represented by a circuit of lumped parameters. Simulation and experiment of CM emission in the conducted frequency range (150 kHz-30 MHz) are compared. It is shown that the CM emission in the system can be calculated by the proposed model, and experiment has successfully confirmed this approach.

Effect of Thread Profile Angle and Geometry Clearance on the Loosening Performance of a Preloaded Bolt-Nut System Under Harmonic Transverse Excitation

2011 ◽  
Author(s):  
Xianjie Yang ◽  
Sayed A. Nassar
Keyword(s):  
Mathematical Model ◽  
Analytical Model ◽  
Experimental Verification ◽  
Good Accuracy ◽  
Profile Angle ◽  
Bolt Preload ◽  
Transverse Excitation ◽  
Proposed Model ◽  
Thread Profile ◽  
Number Of Cycles

A mathematical model is proposed for investigating the effect of the thread profile angle, thread and hole clearances on the loosening behavior of a preloaded bolt-nut system that is subjected to cyclic transverse excitation. Experimental verification of the analytical model results is provided for various levels of the initial bolt preload and frictional characteristics. Comparison of the experimental and analytical results on the clamp load decay with the number of cycles verifies that the proposed model predicts the loosening performance with good accuracy.

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed

2017 ◽  
Vol 897 ◽  
pp. 521-524 ◽  
Author(s):  
Q.J. Zhang ◽  
G. Wang ◽  
Charlotte Jonas ◽  
Craig Capell ◽  
Steve Pickle ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
High Voltage ◽  
Dynamic Characteristics ◽  
High Power ◽  
Switching Speed ◽  
Static And Dynamic Characteristics ◽  
Medium Voltage ◽  
Fast Switching ◽  
High Switching Speed ◽  
Fast Switching Speed

Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ⋅cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 250°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

scholarly journals An Accurate Switching Current Measurement Based on Resistive Shunt Applied to Short Circuit GaN HEMT Characterization

2021 ◽  
Vol 11 (19) ◽  
pp. 9138
Author(s):  
Carmine Abbate ◽  
Leandro Colella ◽  
Roberto Di Folco ◽  
Giovanni Busatto ◽  
Emanuele Martano ◽  
...  
Keyword(s):  
Electronic Device ◽  
Short Circuit ◽  
Drain Current ◽  
Experimental Measurements ◽  
Measurement Circuit ◽  
Voltage Measurement ◽  
Switching Speed ◽  
Gan Hemt ◽  
Gan Hemts ◽  
High Switching Speed

The use of a resistive shunt is one of the simplest and most used methods for measuring current in an electronic device. Many researchers use this method to measure drain current during short-circuiting of fast devices such as GaN HEMTs. However, the high switching speed of these devices together with the non-ideality of the shunt resistors produces an overestimation of the current in the initial phases of the transient. In this paper, a passive compensation network is proposed, which is formed by adding an inductor to the voltage measurement circuit and allows an accurate measurement of the current using the resistive shunt even in the presence of very fast devices. The proposed method is validated by simulations and experimental measurements.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

A memory nanodevice based on Zn-MOF-74: a molecular dynamics study

2020 ◽  
Vol 8 (5) ◽  
pp. 1567-1570 ◽  
Author(s):  
Mikhail Suyetin ◽  
Thomas Heine
Keyword(s):  
Molecular Dynamics ◽  
Electric Field ◽  
Memory Element ◽  
Switching Speed ◽  
High Switching Speed ◽  
Element Density

C60−@Zn-MOF-74 operated by an electric field exhibits a combined high switching speed of 27 GB s−1 and a high memory element density of 106 Tb per inch2.

scholarly journals Analytical Model for Estimating the Impact of Changing the Nominal Power Parameter in LTE

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
A. B. Vallejo-Mora ◽  
M. Toril ◽  
S. Luna-Ramírez ◽  
M. Regueira ◽  
S. Pedraza
Keyword(s):  
Analytical Model ◽  
Mobile Networks ◽  
Radio Resource Management ◽  
Estimation Accuracy ◽  
Model Assessment ◽  
Power Parameter ◽  
Management Procedure ◽  
Proposed Model ◽  
A Cell ◽  
The Impact

UpLink Power Control (ULPC) is a key radio resource management procedure in mobile networks. In this paper, an analytical model for estimating the impact of increasing the nominal power parameter in the ULPC algorithm for the Physical Uplink Shared CHannel (PUSCH) in Long Term Evolution (LTE) is presented. The aim of the model is to predict the effect of changing the nominal power parameter in a cell on the interference and Signal-to-Interference-plus-Noise Ratio (SINR) of that cell and its neighbors from network statistics. Model assessment is carried out by means of a field trial where the nominal power parameter is increased in some cells of a live LTE network. Results show that the proposed model achieves reasonable estimation accuracy, provided uplink traffic does not change significantly.

Synthesis and Characterization of Polyaniline Film

2011 ◽  
Vol 239-242 ◽  
pp. 1382-1385
Author(s):  
Na Xu ◽  
Xiao Dong Shen ◽  
Sheng Cui
Keyword(s):  
Ammonium Persulfate ◽  
Pani Film ◽  
Cyclic Voltammograms ◽  
Ultrasonic Dispersion ◽  
Switching Speed ◽  
Color Changes ◽  
Fast Switching ◽  
Ft Ir ◽  
The Relationship

The electrochromic PANI film was prepared by emulsion polymerization with dodecyl benzene sulphonic acid (DBSA) as dopant and ammonium persulfate (APS) as initiator. Ultrasonic dispersion was adopted in the polymerization. The electrochemical properties, the surface morphology and structure of the prepared PANI film was characterized by means of Fourier Transform infrared spectroscopy (FT-IR), cyclic voltammograms (CV) and field emission scanning electron microscope (FE-SEM), respectively. The relationship between the morphology and properties of PANI film was detailedly discussed. The PANI film exhibited an excellent electrochromism with reversible color changes form yellow to purple. The PANI film also had quite good reaction kinetics with fast switching speed, and the response time for oxidation and reduction were 65 ms and 66 ms, respectively.

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