scholarly journals Electrochromic Performance of V2O5 Thin Films Grown by Spray Pyrolysis

Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3859 ◽  
Author(s):  
Kyriakos Mouratis ◽  
Valentin Tudose ◽  
Cosmin Romanitan ◽  
Cristina Pachiu ◽  
Oana Tutunaru ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Deposition ◽  
Cost Effective ◽  
Active Surface ◽  
X Ray Diffraction ◽  
Large Area ◽  
New Approach ◽  
X Ray ◽  
Area Deposition ◽  
Scanning Electron

A new approach regarding the development of nanostructured V2O5 electrochromic thin films at low temperature (250 °C), using air-carrier spray deposition and ammonium metavanadate in water as precursor is presented. The obtained V2O5 films were characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy, while their electrochromic response was studied using UV-vis absorption spectroscopy and cyclic voltammetry. The study showed that this simple, cost effective, suitable for large area deposition method can lead to V2O5 films with large active surface for electrochromic applications.

scholarly journals Annealing Effect on the Properties of Electrochromic V2O5 Thin Films Grown by Spray Deposition Technique

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2397
Author(s):  
Kyriakos Mouratis ◽  
Ioan Valentin Tudose ◽  
Andrianna Bouranta ◽  
Cristina Pachiu ◽  
Cosmin Romanitan ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Deposition ◽  
Spray Pyrolysis Technique ◽  
Cost Effective ◽  
Active Surface ◽  
X Ray Diffraction ◽  
Large Area ◽  
Growth Optimization ◽  
V2o5 Thin Films ◽  
Area Deposition

Nanostructured electrochromic V2O5 thin films were prepared using spray pyrolysis technique growth at a temperature of 250 °C using air-carrier spray deposition, starting from ammonium metavanadate precursor in water, followed by annealing at 400 °C in O2 atmosphere for 2 h. The V2O5 films were characterized by X-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and their electrochromic behavior was studied using optical spectroscopy and cyclic voltammetry in both the as-deposited and postannealing case. The studies showed that the simple, cost -effective, suitable for large area deposition method used can lead to an interesting surface structuring with large active surface properties suitable for electrochromic applications. Further studies for growth optimization and improvements of films properties and stability are to be performed.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

MICROSTRUCTURE AND BLUE PHOTOLUMINESCENCE OF HYDROGENATED SILICON CARBONITRIDE THIN FILMS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850177 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
GUIBIN LEI ◽  
YUANJU GAN ◽  
YUEFENG CHEN
Keyword(s):  
Thin Films ◽  
Network Structure ◽  
Energy Dispersive Spectrometer ◽  
Silicon Carbonitride ◽  
X Ray Diffraction ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Atomic Force ◽  
Scanning Electron ◽  
Blue Photoluminescence

Hydrogenated silicon carbonitride (SiCN:H) thin films were deposited by sputtering of silicon carbide target in hydrogen-doped argon and nitrogen atmospheres. The properties of the SiCN:H films were analyzed by scanning electron microscopy with energy dispersive spectrometer, atomic force microscope, Fourier transform infrared spectroscopy, X-ray diffraction and fluorescence spectrophotometer. No distinct crystal was formed in the SiCN:H films as-deposited and annealed at 600∘C and 800∘C. The SiCN:H films were mainly composed of Si–N, Si–C, Si–O, C–C, C–N, C[Formula: see text]N, N–Hn bonds and SiCxNy network structure. The strong blue photoluminescence observed from the SiCN:H film annealed at 600∘C was attributed to SiCxNy network structure.

Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films

2021 ◽  
Vol 1039 ◽  
pp. 398-405
Author(s):  
Munira M.J. Al-Haji ◽  
Raad M.S. Al-Haddad
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Evaporation ◽  
Source Material ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Melt Quenching ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Scanning Electron

Bulk Germanium monosulphide (GeS) alloy was synthesized using the usual melt-quenching technique. Its grains were used as the source material to deposit thin films by vacuum thermal evaporation. Thin-films samples were doped with 1, 2, and 3 at.% indium by thermal co-evaporation and annealed in a vacuum at temperatures 373, 473 and 550 K for an hour. Compositional, structural, and morphological properties of the bulk GeS alloy and its thin films were investigated by Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) techniques. The analyses verified the stoichiometry (GeS) of the starting material in the prepared thin films. They also revealed that the thin films under study are amorphous, homogeneous, without any cracks deposited uniformly on the glass substrate with thickness 650 to 700 nm.

IMPROVED NITRIDING CAPABILITY OF NONALLOYED STEELS ASSISTED WITH ACTIVE SCREEN PLASMA TREATMENT

2019 ◽  
Vol 27 (03) ◽  
pp. 1950118 ◽  
Author(s):  
M. NAEEM ◽  
H. A. RAZA ◽  
M. SHAFIQ ◽  
FARHAT SHABBIR ◽  
JAVED IQBAL ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Cost Effective ◽  
Additional Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hardness Tester ◽  
Polarization Test ◽  
Pin On Disc ◽  
Scanning Electron ◽  
Active Screen

The nonalloyed steels are very cost-effective, but their usefulness in numerous applications is imbedded due to low mechanical strength. The strength of several steels can be improved by nitriding; however, nonalloyed steels are not suitable. They can be nitrided by introducing special nitriding alloys (like chromium, aluminum, etc.) during manufacturing or some interlayer deposition, but it is quite expensive. The aim of this study is to improve nitriding capability of nonalloyed steels without any additional treatment. This is done by using alloyed stainless steel active screen in active screen plasma treatment, which provides an adequate amount of chromium to form stable and hard nitrides. The processed samples are characterized by X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy, pin-on-disc wear tester, hardness tester and potentiodynamic polarization test.

scholarly journals Effect of Polymers (PEG and PVP) on Sol-Gel Synthesis of Microsized Zinc Oxide

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Thilagavathi Thirugnanam
Keyword(s):  
Sol Gel ◽  
Cost Effective ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Modifications ◽  
Phase Pure ◽  
Sol Gel Synthesis ◽  
Polyethylene Glycol 6000 ◽  
Granular Morphology ◽  
Scanning Electron

Fibers irregular and seed-like microcrystalline ZnO were synthesized by using a cost-effective and low temperature aqueous sol-gel method. Various polymers, namely, polyethylene glycol 6000 (PEG 6000) and polyvinyl pyrrolidone (PVP), were used as structure directing agents. The samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). The X-ray diffraction pattern revealed the formation of phase-pure ZnO micropowders. It is observed that the polymers play an important role in modifying the surface morphology and the size of the crystallites. A compact granular morphology is observed for the ZnO samples without polymer. The samples exhibit microparticles of size 100 nm for PVP and for PEG-mediated growth, whereas microporous corrugated morphology is observed for added PEG-mediated micropowder. FTIR study is used to confirm the structural modifications occurring in the polymers.

Formation and Characterization of the Quasicrystal Films

2007 ◽  
Vol 546-549 ◽  
pp. 1699-1702
Author(s):  
Xi Ying Zhou ◽  
Liang He ◽  
Yan Hui Liu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Electric Current ◽  
Wear Behavior ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

Al-Cu-Fe quasicrystals powder was used to prepare the thin films on the surface of the A3 steel by the means of DMD-450 vacuum evaporation equipment. The thin films with different characterization were obtained through different parameters. The microstructures of the thin films were analyzed by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Additionally, the nano-hardness and the modulus of the films are tested by MTS and Neophot micro-hardness meter. The results showed that the modulus of the films was about 160GPa. Nano hardness of the films was about 7.5 Gpa. The films consisted of CuAl2, AlCu3. The thickness and the micro-hardness of the films are improved. In same way, with the increase of the electric current, the thickness and the hardness of the films are also improved. Along with increase of the time and the electric current, the wear behavior of the films was improved. To some extent, the microstructure of films contained the quasicrystal phase of Al65Cu20Fe15.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

scholarly journals Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

2017 ◽  
Vol 2017 ◽  
pp. 1-4 ◽  
Author(s):  
Swati Arora ◽  
Vivek Jaimini ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Bismuth Telluride ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Scanning Electron

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

EPITAXIALLY GROWN YBCO THIN FILMS ON LOW LOSS LaAlO3 SUBSTRATE

1990 ◽  
Vol 04 (05) ◽  
pp. 369-373 ◽  
Author(s):  
Y. Z. ZHANG ◽  
L. LI ◽  
Y. Y. ZHAO ◽  
B. R. ZHAO ◽  
Y. G. WANG ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Low Loss ◽  
X Ray ◽  
Ybco Thin Films ◽  
Zero Resistance ◽  
Scanning Electron

A planar dc magnetron sputtering device was used to prepare high T c and high J c YBCO thin films. Both single crystal and polycrystal thin films were successfully grown on (100) oriented LaAlO 3 substrates. Zero resistance temperature T c0 = 92.3 K and critical current density J c (0) = 3.82 × 106 A/cm 2 at 77 K was obtained. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

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