scholarly journals Surface Investigation of Ni81Fe19 Thin Film: Using ARXPS for Thickness Estimation of Oxidation Layers

Metals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 2061
Author(s):  
Zongsheng He ◽  
Ziyu Li ◽  
Xiaona Jiang ◽  
Chuanjian Wu ◽  
Yu Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Electron Beam Evaporation ◽  
Surface Oxide Layer ◽  
Atmospheric Conditions ◽  
Oxidation Layers

This work demonstrates the dependence between magnetic properties and the thickness of NiFe thin films. More importantly, a quantitative study of the surface composition of NiFe thin film exposed to atmospheric conditions has been carried out employing angle-resolved X-ray photoelectron spectroscopy (ARXPS). In this study, we fabricated Ni81Fe19 (NiFe) thin films on Si (100) substrate using electron beam evaporation and investigated their surface morphologies, magnetic properties, and the thickness of the surface oxide layer. The coexistence of metallic and oxidized species on the surface are suggested by the depth profile of ARXPS spectra. The thickness of the oxidized species, including NiO, Ni(OH)2, Fe2O3, and Fe3O4, are also estimated based on the ARXPS results. This work provides an effective approach to clarify the surface composition, as well as the thickness of the oxide layer of the thin films.

scholarly journals Etching Characteristics and Changes in Surface Properties of IGZO Thin Films by O2 Addition in CF4/Ar Plasma

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 906
Author(s):  
Chea-Young Lee ◽  
Young-Hee Joo ◽  
Minsoo P. Kim ◽  
Doo-Seung Um ◽  
Chang-Il Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Work Function ◽  
Surface Properties ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Film Surface ◽  
Etching Mechanism

Plasma etching processes for multi-atomic oxide thin films have become increasingly important owing to the excellent material properties of such thin films, which can potentially be employed in next-generation displays. To fabricate high-performance and reproducible devices, the etching mechanism and surface properties must be understood. In this study, we investigated the etching characteristics and changes in the surface properties of InGaZnO4 (IGZO) thin films with the addition of O2 gases based on a CF4/Ar high-density-plasma system. A maximum etch rate of 32.7 nm/min for an IGZO thin film was achieved at an O2/CF4/Ar (=20:25:75 sccm) ratio. The etching mechanism was interpreted in detail through plasma analysis via optical emission spectroscopy and surface analysis via X-ray photoelectron microscopy. To determine the performance variation according to the alteration in the surface composition of the IGZO thin films, we investigated the changes in the work function, surface energy, and surface roughness through ultraviolet photoelectron spectroscopy, contact angle measurement, and atomic force microscopy, respectively. After the plasma etching process, the change in work function was up to 280 meV, the thin film surface became slightly hydrophilic, and the surface roughness slightly decreased. This work suggests that plasma etching causes various changes in thin-film surfaces, which affects device performance.

Fatigue Degradation of Nanometer-Scale Silicon Dioxide Reaction Layers on Silicon Structural Films

2003 ◽  
Vol 778 ◽  
Author(s):  
C.L. Muhlstein ◽  
E.A. Stach ◽  
R.O. Ritchie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxide Layer ◽  
Fatigue Failure ◽  
Reaction Layer ◽  
Small Scale ◽  
Surface Oxide Layer ◽  
Silica Layer ◽  
Thin Film Silicon ◽  
Structural Applications

AbstractAlthough bulk silicon is ostensibly immune to cyclic fatigue and environmentally-assisted cracking, the thin film form of the material exhibits significantly different behavior. Such silicon thin films are used in small-scale structural applications, including microelectromechanical systems (MEMS), and display ‘metal-like’ stress-life (S/N) fatigue behavior in room temperature air environments. Fatigue lives in excess of 1011 cycles have been observed at high frequency (∼40 kHz), fully-reversed stress amplitudes as low as half the fracture strength using surface micromachined, resonant-loaded, fatigue characterization structures. Recent experiments have clarified the origin of the susceptibility of thin film silicon to fatigue failure. Stress-life fatigue, transmission electron microscopy, infrared microscopy, and numerical models have been used to establish that the mechanism of the apparent fatigue failure of thin-film silicon involves sequential oxidation and environmentally-assisted crack growth solely within the nanometerscale silica layer on the surface of the silicon, via a process that we term ‘reaction-layer fatigue’. Only thin films are susceptible to such a failure mechanism because the critical crack size for catastrophic failure of the entire silicon structure can be exceeded by a crack solely within the surface oxide layer. The growth of the oxide layer and the environmentally-assisted initiation of cracks under cyclic loading conditions are discussed in detail. Furthermore, the importance of interfacial fracture mechanics solutions and the synergism of the oxidation and cracking processes are described. Finally, the successful mitigation of reaction-layer fatigue with monolayer coatings is shown.

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Preparation and Characterization of SnO2/WO3/MWCNT Nanocomposite Thin Film for NO2 Gas Sensor

2010 ◽  
Vol 129-131 ◽  
pp. 99-103
Author(s):  
Wei Lin ◽  
Shi Zhen Huang ◽  
Wen Zhe Chen
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Photoelectron Spectroscopy ◽  
Mixed Oxides ◽  
Surface Composition ◽  
Chemical Elements ◽  
Film Material ◽  
Nanocomposite Thin Film ◽  
Oxide Compound ◽  
Thin Film Material

A novel nanocomposite thin film material of SnO2/WO3 metal oxide compound doped by multi-walled carbon nanotubes (MWCNT) and its corresponding gas sensor were prepared by radio frequency (RF) reactive magnetron sputtering. The surface composition and chemical elements of the thin film material were respectively analyzed and validated by X-ray diffraction (XRD) and photoelectron spectroscopy (XPS). The influencing factors of gas sensing properties were studied and the test results of gas sensor were analyzed. The results indicated that the detection using the composite material gas sensors for low concentration NO2 toxic gas could be greatly improved by MWCNTs which were doped on the mixed oxides matrix. A possible mechanism explaining the behaviour of the thin film gas sensor was introduced.

scholarly journals Magnetic and Electronic Properties of Weyl Semimetal Co2MnGa Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 251
Author(s):  
Peter Swekis ◽  
Aleksandr S. Sukhanov ◽  
Yi-Cheng Chen ◽  
Andrei Gloskovskii ◽  
Gerhard H. Fecher ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Magnetic Moments ◽  
Field Orientation ◽  
Weyl Semimetal ◽  
Uniform Magnetization ◽  
Experimental Findings ◽  
High Degree

Magnetic Weyl semimetals are newly discovered quantum materials with the potential for use in spintronic applications. Of particular interest is the cubic Heusler compound Co2MnGa due to its inherent magnetic and topological properties. This work presents the structural, magnetic and electronic properties of magnetron co-sputtered Co2MnGa thin films, with thicknesses ranging from 10 to 80 nm. Polarized neutron reflectometry confirmed a uniform magnetization through the films. Hard x-ray photoelectron spectroscopy revealed a high degree of spin polarization and localized (itinerant) character of the Mn d (Co d) valence electrons and accompanying magnetic moments. Further, broadband and field orientation-dependent ferromagnetic resonance measurements indicated a relation between the thickness-dependent structural and magnetic properties. The increase of the tensile strain-induced tetragonal distortion in the thinner films was reflected in an increase of the cubic anisotropy term and a decrease of the perpendicular uniaxial term. The lattice distortion led to a reduction of the Gilbert damping parameter and the thickness-dependent film quality affected the inhomogeneous linewidth broadening. These experimental findings will enrich the understanding of the electronic and magnetic properties of magnetic Weyl semimetal thin films.

scholarly journals Structural, chemical and magnetic properties of nickel vertical posts obtained by glancing angle deposition technique

2017 ◽  
Vol 49 (1) ◽  
pp. 73-79
Author(s):  
Jelena Potocnik ◽  
Milos Nenadovic ◽  
Bojan Jokic ◽  
Maja Popovic ◽  
Zlatko Rakocevic
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Glancing Angle Deposition ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Glancing Angle ◽  
Magneto Optical Kerr Effect ◽  
Angle Deposition

In this work, Glancing Angle Deposition technique was used for obtaining nanostructured nickel thin film with vertical posts on glass substrate which was positioned 75 degrees with respect to the substrate normal and rotated with a suitable constant speed. The obtained nickel thin film was characterized by Scanning Electron Microscopy, Atomic Force Microscopy and X-ray Photoelectron Spectroscopy. It was found that the deposited thin film consists of 94.0 at.% of nickel. Magnetic properties of the deposited thin film were determined by Magneto-Optical Kerr Effect Microscopy. According to the obtained coercivity values, it can be concluded that the nickel thin film shows uniaxial magnetic anisotropy.

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