scholarly journals Understanding of the Mechanism for Laser Ablation-Assisted Patterning of Graphene/ITO Double Layers: Role of Effective Thermal Energy Transfer

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 821
Author(s):  
Hyung Ryu ◽  
Hong-Seok Kim ◽  
Daeyoon Kim ◽  
Sang Lee ◽  
Wonjoon Choi ◽  
...  

Demand for the fabrication of high-performance, transparent electronic devices with improved electronic and mechanical properties is significantly increasing for various applications. In this context, it is essential to develop highly transparent and conductive electrodes for the realization of such devices. To this end, in this work, a chemical vapor deposition (CVD)-grown graphene was transferred to both glass and polyethylene terephthalate (PET) substrates that had been pre-coated with an indium tin oxide (ITO) layer and then subsequently patterned by using a laser-ablation method for a low-cost, simple, and high-throughput process. A comparison of the results of the laser ablation of such a graphene/ITO double layer with those of the ITO single-layered films reveals that a larger amount of effective thermal energy of the laser used is transferred in the lateral direction along the graphene upper layer in the graphene/ITO double-layered structure, attributable to the high thermal conductivity of graphene. The transferred thermal energy is expected to melt and evaporate the lower ITO layer at a relatively lower threshold energy of laser ablation. The transient analysis of the temperature profiles indicates that the graphene layers can act as both an effective thermal diffuser and converter for the planar heat transfer. Raman spectroscopy was used to investigate the graphite peak on the ITO layer where the graphene upper layer was selectively removed because of the incomplete heating and removal process for the ITO layer by the laterally transferred effective thermal energy of the laser beam. Our approach could have broad implications for designing highly transparent and conductive electrodes as well as a new way of nanoscale patterning for other optoelectronic-device applications using laser-ablation methods.

2015 ◽  
Vol 737 ◽  
pp. 88-91 ◽  
Author(s):  
Peng Wang ◽  
Tong Yu Wang ◽  
He Lin Wang ◽  
Tie Qiang Zhang

what the cheaper and easier to get is graphene to replace high cost, limited sources of material and high temperature difference between the ITO (indium tin oxide) electrode material as a quantum dot solar cells is the focus of this study. This study used a chemical vapor deposition (CVD) production of graphene electrode explore the relationship between the transmittance and the graphene sheet resistance graphene layers; then make a graphene material as an electrode of the solar cell devices of different size and detecting its performance, the conclusion that the material is graphene electrode PbSe / CdSe quantum dot battery, which can effectively improve the conversion rate of the quantum dot solar cells (up to 3.6%), and stability, but also can greatly reduce the cost;


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.


2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.


2021 ◽  
Vol 21 (5) ◽  
pp. 3165-3170
Author(s):  
Ashish Kumar ◽  
Arathy Varghese ◽  
Shriniwas Yadav ◽  
Mahanth Prasad ◽  
Vijay Janyani ◽  
...  

The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been deposited and I–V measurement has been done. The effect of operating temperature (300 K to 425 K) on I–V characteristics of the fabricated structure has been measured experimentally. The other diode parameters such as ideality factor and effective barrier height have been derived. The reliability of the heterojunction synthesized is proved by the diode ideality factor of 1.03 attained at 425 K. The excellent C–V characteristics (capacitance of 48pF) of the device prove that the device is an excellent candidate for application as supercapacitors. The fabricated structure can be utilized as an ultraviolet photodetector, solar cell, energy storage devices, etc.


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