scholarly journals Preparation, Structure, and Electrical Properties of Cobalt-Modified Bi(Sc3/4In1/4)O3–PbTiO3–Pb(Mg1/3Nb2/3)O3 High-Temperature Piezoelectric Ceramics

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1556
Author(s):  
Zhijiang Chen ◽  
Na Lin ◽  
Zhao Yang ◽  
Juan Zhang ◽  
Kefei Shi ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Electromechanical Coupling ◽  
Electromechanical Coupling Coefficient ◽  
Promising Candidate ◽  
Good Thermal Stability ◽  
Structure Morphology ◽  
Average Grain Size ◽  
Curie Temperature Tc ◽  
State Processing

Cobalt-modified 0.40Bi(Sc3/4In1/4)O3–0.58PbTiO3–0.02Pb(Mg1/3Nb2/3)O3 ceramics (abbreviated as BSI–PT–PMN–xCo) were produced by conventional two-step solid-state processing. The phase structure, micro structure morphology, and electrical properties of BSI–PT–PMN–xCo were systematically studied. The introduction of Co ions exerted a significant influence on the structure and electrical properties. The experiment results demonstrated that Co ions entered the B-sites of the lattice, resulting in slight lattice distortion and a smaller lattice constant. The average grain size increased from ~1.94 μm to ~2.68 μm with the increasing Co content. The optimized comprehensive electrical properties were obtained with proper Co-modified content 0.2 wt.%. The Curie temperature (Tc) was 412 °C, the piezoelectric constant (d33) was 370 pC/N, the remnant polarization (Pr) was 29.2 μC/cm2, the relatively dielectric constant (εr) was 1450, the planar electromechanical coupling coefficient (kp) was 46.5, and the dielectric loss (tanδ) was 0.051. Together with the enhanced DC resistivity of 109 Ω cm under 300 °C and good thermal stability, BSI–PT–PMN–0.2Co ceramic is a promising candidate material for high-temperature piezoelectric applications.

Electrical Properties of Bi(In,Ga,Sc)O3-PbTiO3 Piezoelectric Ceramics

2013 ◽  
Vol 364 ◽  
pp. 794-798 ◽  
Author(s):  
Yi Chen ◽  
Jian Guo Zhu ◽  
Ding Quan Xiao
Keyword(s):  
Dielectric Constant ◽  
High Temperature ◽  
Electrical Properties ◽  
Lead Titanate ◽  
Room Temperature ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Electromechanical Coupling Coefficient ◽  
Piezoelectric Devices ◽  
Dielectric And Piezoelectric Properties

The gallium and indium double-modified bismuth scandate-lead titanate (1-x)Bi (In0.20Ga0.05Sc0.75)O3-xPbTiO3((1-x)BIGS-xPT,x=0.55-0.70) ceramics were prepared by using conventional ceramic technique. (1-x)BIGS-xPT ceramics for nearx=0.60 exhibits an evident enhancement in room temperature dielectric and piezoelectric properties, with dielectric constantε, piezoelectric constantd33, planar electromechanical coupling coefficientkpand Curie temperatureTCof 1100, 295 pC/N, 0.43 and 435 °C, respectively. TheTCof (1-x)BIGS-xPT is in the range of 425-530 °C for the compositions investigated. The combination of highTCand excellent piezoelectric activity suggest that the (1-x)BIGS-xPT ceramics are usable candidate materials for high temperature piezoelectric devices applications.

Effects of Different Sintering Temperature on the Microstructure and Piezoelectric Properties of Pb(Nb2/3Zn1/3)x(Zr52Ti48)1-XO3 Ceramics

2014 ◽  
Vol 1061-1062 ◽  
pp. 83-86
Author(s):  
Hong Wu ◽  
De Yi Zheng
Keyword(s):  
Electrical Properties ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Sintering Temperature ◽  
Electromechanical Coupling Coefficient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ceramic Samples ◽  
Xrd Patterns ◽  
The Relationship

In this paper, the effects of different sintering temperature on the microstructure and piezoelectric properties of Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3(PNZZT) ceramic samples were investigated. The Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3 ceramics materials was prepared by a conventional mixed oxide method. In the period of the experiment, the relationship between crystallographic phase and microstructure were analyzed by X-ray diffraction(XRD) and scanning electron microscopy(SEM) respectively. The XRD patterns shows that all of the ceramic samples are with a tetragonal perovskite structure. Along with sintering temperature increased and the x is 0.03, the grain size gradually become big. Through this experiment, it has been found that when the x is 0.03 and sintered at 1130°C for 2 h, the grains grow well, the grain-boundary intersection of the sample combined well and the porosity of the ceramics decreased, an excellent comprehensive electrical properties of the Pb(Nb2/3Zn1/3)0.03(Zr52Ti48)0.97O3 samples can be obtained. Its best electrical properties are as follows: dielectric constant (ε) is 1105, dielectric loss(tg) is 0.017, electromechanical coupling coefficient (Kp) is 0.287, piezoelectric constant(d33) is 150PC/N

Investigation on Electrical Properties of CaCu3Ti4O12-Modified (Na,Bi)TiO3-BaTiO3 Lead Free Piezoceramics

2014 ◽  
Vol 887-888 ◽  
pp. 289-293
Author(s):  
Jing Chang Zhao ◽  
Zhen Lai Zhou
Keyword(s):  
Electrical Properties ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Piezoelectric Ceramics ◽  
Electromechanical Coupling Factor ◽  
Coupling Factor ◽  
Mechanical Quality Factor ◽  
Lead Free ◽  
Lead Free Ceramics ◽  
Structure Morphology

(Na,Bi)TiO3-BaTiO3lead free piezoelectric ceramics were fabricated with modification of CaCu3Ti4O12additives. The phase structure, morphology, dielectric and piezoelectric properties of prepared samples were investigated, respectively. It was found that CaCu3Ti4O12additives evidently improve the polarization properties of (Na,Bi)TiO3-BaTiO3lead free ceramics and the obtained samples exhibit an excellent piezoelectric properties (electromechanical coupling factorKp=31%, mechanical quality factorQm=151 and piezoelectric constantd33=160pC/N). According to results, the effect of CaCu3Ti4O12additives on electrical properties of (Na,Bi)TiO3-BaTiO3lead free piezoelectric ceramics is discussed.

Effects of Alkali Metal Content and Sintering Temperature on the Structure and Electrical Properties of (Na0.52K0.48) 0.94+xLi0.06-xNb0.94Sb0.06O3 Lead-Free Piezoelectric Ceramics

2013 ◽  
Vol 423-426 ◽  
pp. 459-462
Author(s):  
Hai Tao Li ◽  
Xiao Bo Hong ◽  
Hong Qiong Huang ◽  
Jin Feng Gong ◽  
Zhi Yuan Cheng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Content ◽  
Electromechanical Coupling ◽  
Piezoelectric Properties ◽  
Sintering Temperature ◽  
Piezoelectric Ceramics ◽  
Lead Free ◽  
Electromechanical Coupling Coefficient ◽  
Sintering Behavior ◽  
Orthorhombic Symmetry

Alkali niobate lead-free piezoelectric ceramics with nominal compositions [(Na0.52K0.48)0.94+ xLi0.06-x](Nb0.94Sb0.06)O3 ((NK)xLNS) were prepared by normal sintering. Crystalline phase, piezoelectric properties and sintering behavior of (NK)xLNS ceramics were investigated with a special emphasis on the influence of alkli metal content. The x-ray diffraction patterns and the corresponding calculation of lattice parameters indicated that a phase transition from tetragonal to orthorhombic symmetry occurs as x=0.01, resulting in enhanced piezoelectric constant and planar electromechanical coupling coefficient of 266 pC/N and 38.5%, respectively. With x=0.01, the ceramics sintered at 1050 C show higher density and better electrical properties. Our results indicate the importance of sintering temperature and elaborate compositional control for enhancing piezoelectric properties in niobate-based ceramics.

scholarly journals A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 149
Author(s):  
Savannah R. Eisner ◽  
Cailin A. Chapin ◽  
Ruochen Lu ◽  
Yansong Yang ◽  
Songbin Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Lithium Niobate ◽  
Quality Factor ◽  
Electromechanical Coupling ◽  
Resonant Mode ◽  
Electromechanical Coupling Coefficient ◽  
Resonant Sensors ◽  
Mems Resonator ◽  
Temperature Coefficient Of Frequency ◽  
Temperature Exposure

This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.

scholarly journals Enhanced Electrical Properties of Lead-Free Piezoelectric KNLN-BZ-BNT Ceramics With the Modification of Sm3+ Ions

2021 ◽  
Vol 8 ◽  
Author(s):  
Yi Quan ◽  
Lingyan Wang ◽  
Wei Ren ◽  
Jinyan Zhao ◽  
Jian Zhuang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Electrical Properties ◽  
Piezoelectric Properties ◽  
Piezoelectric Ceramics ◽  
High Thermal Stability ◽  
Lead Free ◽  
Environment Friendly ◽  
Good Thermal Stability ◽  
Good For

Environment-friendly lead-free piezoelectric ceramics with great properties and high thermal stability are desired in the industry. In this work, the Sm3+-modified lead-free 0.915(K0.45Na0.5Li0.05)NbO3–0.075BaZrO3–0.01(Bi0.5Na0.5)TiO3 (KNLN-BZ-BNT) ceramics are prepared. The piezoelectric properties are improved with the introduction of Sm3+, and the optimal properties (d33 = 325 pC/N and d33* = 384 pm/V) are achieved in the ceramic modified with 0.3 mol% Sm3+ ions. Meanwhile, this sample shows good thermal stability such that the values of d33* decreased less than 20% when the temperature raised from 30 to 180oC. These results show the Sm3+-modified KNLN-BZ-BNT ceramics are good for further applications even under high temperature.

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type

scholarly journals Structural Transformations and Mechanical Properties of Metastable Austenitic Steel under High Temperature Thermomechanical Treatment

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 645
Author(s):  
Igor Litovchenko ◽  
Sergey Akkuzin ◽  
Nadezhda Polekhina ◽  
Kseniya Almaeva ◽  
Evgeny Moskvichev
Keyword(s):  
Plastic Deformation ◽  
Grain Size ◽  
High Temperature ◽  
Austenitic Steel ◽  
Structural Transformations ◽  
Initial State ◽  
Twin Boundaries ◽  
Metastable Austenitic Steel ◽  
Average Grain Size ◽  
Heating Up

The effect of high-temperature thermomechanical treatment on the structural transformations and mechanical properties of metastable austenitic steel of the AISI 321 type is investigated. The features of the grain and defect microstructure of steel were studied by scanning electron microscopy with electron back-scatter diffraction (SEM EBSD) and transmission electron microscopy (TEM). It is shown that in the initial state after solution treatment the average grain size is 18 μm. A high (≈50%) fraction of twin boundaries (annealing twins) was found. In the course of hot (with heating up to 1100 °C) plastic deformation by rolling to moderate strain (e = 1.6, where e is true strain) the grain structure undergoes fragmentation, which gives rise to grain refining (the average grain size is 8 μm). Partial recovery and recrystallization also occur. The fraction of low-angle misorientation boundaries increases up to ≈46%, and that of twin boundaries decreases to ≈25%, compared to the initial state. The yield strength after this treatment reaches up to 477 MPa with elongation-to-failure of 26%. The combination of plastic deformation with heating up to 1100 °C (e = 0.8) and subsequent deformation with heating up to 600 °C (e = 0.7) reduces the average grain size to 1.4 μm and forms submicrocrystalline fragments. The fraction of low-angle misorientation boundaries is ≈60%, and that of twin boundaries is ≈3%. The structural states formed after this treatment provide an increase in the strength properties of steel (yield strength reaches up to 677 MPa) with ductility values of 12%. The mechanisms of plastic deformation and strengthening of metastable austenitic steel under the above high-temperature thermomechanical treatments are discussed.

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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