scholarly journals A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1312 ◽  
Author(s):  
Huang ◽  
Li ◽  
Xu ◽  
Liu ◽  
Luo ◽  
...  
Keyword(s):  
High Performance ◽  
Large Scale ◽  
Carrier Transport ◽  
Spectral Response ◽  
Acid Methyl Ester ◽  
Single Layer ◽  
Chemical Vapor ◽  
Light Emitting ◽  
Efficient Charge ◽  
Device Applications

Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N, N'-bis-4-butylphenyl-N, N'-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 × 1011 Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

scholarly journals 2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Low Cost ◽  
Light Trapping ◽  
Incident Light ◽  
Single Layer ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Planar Silicon ◽  
Shortwave Infrared

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.

Highly efficient single-layer blue polymer light-emitting diodes based on hole-transporting group substituted poly(fluorene-co-dibenzothiophene-S,S-dioxide)

2017 ◽  
Vol 5 (37) ◽  
pp. 9680-9686 ◽  
Author(s):  
Feng Peng ◽  
Na Li ◽  
Lei Ying ◽  
Wenkai Zhong ◽  
Ting Guo ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Single Layer ◽  
Random Copolymer ◽  
Hole Transport ◽  
Light Emitting ◽  
Hole Transporting ◽  
Polymer Light Emitting Diodes ◽  
Copolymer Poly

We developed a series of high-performance blue light-emitting polymers that contain hole-transport moieties comprising carbazole or triphenylamine substituents in the side chains of random copolymer poly(fluorene-co-dibenzothiophene-S,S-dioxide) (PFSO).

scholarly journals Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor

2020 ◽  
Vol 13 (1) ◽  
Author(s):  
Jing Ning ◽  
Maoyang Xia ◽  
Dong Wang ◽  
Xin Feng ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Solid State ◽  
High Performance ◽  
Large Scale ◽  
Specific Capacity ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Specific Area ◽  
High Energy ◽  
Scale Production ◽  
Free Standing

Abstract Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures. Herein, we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid melting-reconstruction chemical vapor deposition. In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles, considerably catalyzing the growth of Ni–Si nanocrystals. By controlling the carbon source content, a Ni3Si2 single crystal with high crystallinity and good homogeneity is stably synthesized. Electrochemical measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g−1 (1193.28 F g−1) at 1 A g−1; when integrated as an all-solid-state supercapacitor, it provides a remarkable energy density as high as 25.9 Wh kg−1 at 750 W kg−1, which can be attributed to the free-standing Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution, thereby accelerating the electron exchange rate. The growth of the high-performance composite nanostructure is simple and controllable, enabling the large-scale production and application of microenergy storage devices.

Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2Synthesized by Chemical Vapor Deposition

ACS Nano ◽  
2014 ◽  
Vol 8 (5) ◽  
pp. 4961-4968 ◽  
Author(s):  
Woanseo Park ◽  
Jaeyoon Baik ◽  
Tae-Young Kim ◽  
Kyungjune Cho ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Spectroscopic Imaging ◽  
Large Area ◽  
Device Applications

Chemical Vapor Deposited Graphene for Opto-Electronic Applications

2016 ◽  
Vol 39 ◽  
pp. 57-68
Author(s):  
Vikram Passi ◽  
Amit Gahoi ◽  
Sarah Riazimehr ◽  
Stefan Wagner ◽  
Andreas Bablich ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Spectral Response ◽  
Single Layer ◽  
Chemical Vapor ◽  
Adsorbed Water ◽  
Single Layer Graphene ◽  
Ambient Conditions ◽  
Transfer Length ◽  
Type Silicon ◽  
P Type

In this work, fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a thermal chemical vapor deposition process on copper foils and subsequently transferred onto silicon-dioxide/silicon substrate. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon. Spectral response of graphene photodiodes is measured to be less than 0.2 mAW-1 which is attributed to the light absorbance of 2.3% for single layer graphene. Transfer length method device structures are also fabricated and contact resistance is calculated and plotted as a function of spacing between the contacts. The calculated contact resistance (RcW) is 0.87 kΩ.µm. The latter structures are also characterised under various ambient conditions, before and after annealing. The value of contact resistance reduces from 0.87 kΩ.µm to 0.75 kΩ.µm after annealing. This reduction is attributed to the improvement in bonding between graphene and metal. Measurements under vacuum show an increase in contact resistance which is attributed to the removal of adsorbed water molecules on the surface on graphene. The sheet resistivity of graphene is calculated to be between 1.17 kΩ/□ and 3.67 kΩ/□.

scholarly journals Directional and Fast Photoluminescence from CsPbI3 Nanocrystals Coupled to Dielectric Circular Bragg Gratings

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 422
Author(s):  
Yan Hua ◽  
Yuming Wei ◽  
Bo Chen ◽  
Zhuojun Liu ◽  
Zhe He ◽  
...  
Keyword(s):  
High Performance ◽  
Emission Rate ◽  
Bragg Gratings ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Radiative Emission ◽  
Nanophotonic Devices ◽  
Device Applications ◽  
Fundamental Research ◽  
Lead Halide

Lead halide perovskite nanocrystals (NCs), especially the all-inorganic perovskite NCs, have drawn substantial attention for both fundamental research and device applications in recent years due to their unique optoelectronic properties. To build high-performance nanophotonic devices based on perovskite NCs, it is highly desirable to couple the NCs to photonic nanostructures for enhancing the radiative emission rate and improving the emission directionality of the NCs. In this work, we synthesized high-quality CsPbI3 NCs and further coupled them to dielectric circular Bragg gratings (CBGs). The efficient couplings between the perovskite NCs and the CBGs resulted in a 45.9-fold enhancement of the photoluminescence (PL) intensity and 3.2-fold acceleration of the radiative emission rate. Our work serves as an important step for building high-performance nanophotonic light emitting devices by integrating perovskite NCs with photonic nanostructures.

scholarly journals III–V Nanowires: Synthesis, Property Manipulations, and Device Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-14 ◽  
Author(s):  
Ming Fang ◽  
Ning Han ◽  
Fengyun Wang ◽  
Zai-xing Yang ◽  
SenPo Yip ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Research Field ◽  
Synthesis Methods ◽  
Comprehensive Overview ◽  
Device Applications ◽  
Property Control

III–V semiconductor nanowire (NW) materials possess a combination of fascinating properties, including their tunable direct bandgap, high carrier mobility, excellent mechanical flexibility, and extraordinarily large surface-to-volume ratio, making them superior candidates for next generation electronics, photonics, and sensors, even possibly on flexible substrates. Understanding the synthesis, property manipulation, and device integration of these III–V NW materials is therefore crucial for their practical implementations. In this review, we present a comprehensive overview of the recent development in III–V NWs with the focus on their cost-effective synthesis, corresponding property control, and the relevant low-operating-power device applications. We will first introduce the synthesis methods and growth mechanisms of III–V NWs, emphasizing the low-cost solid-source chemical vapor deposition (SSCVD) technique, and then discuss the physical properties of III–V NWs with special attention on their dependences on several typical factors including the choice of catalysts, NW diameters, surface roughness, and surface decorations. After that, we present several different examples in the area of high-performance photovoltaics and low-power electronic circuit prototypes to further demonstrate the potential applications of these NW materials. Towards the end, we also make some remarks on the progress made and challenges remaining in the III–V NW research field.

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