scholarly journals Developing Efficient Thin Film Temperature Sensors Utilizing Layered Carbon Nanotube Films

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3182 ◽  
Author(s):  
Shrutidhara Sarma ◽  
Jang Lee
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Electrical Response ◽  
Chemical Vapor ◽  
Temperature Sensors ◽  
Sensing Element ◽  
Linear Change ◽  
Si Substrates ◽  
Sensing Material ◽  
Chemical Vapor Deposited

In this paper, we present the fabrication of an efficient thin film temperature sensor utilizing chemical vapor deposited carbon nanotube (CNT) film as the sensing element on Si substrates, with diamond-like carbon (DLC):Ni as a catalyst in assisting CNT growth. The fabricated sensor showed good electrical response with change in temperature. Relative linear change in resistance of 18.4% for an increase in temperature from 22 °C to 200 °C was achieved. Various characterizing techniques, such as scanning electron microscopy (SEM) and Raman spectroscopy, were used to characterize the films. In an effort to study device performance, van der Pauw and Hall measurements were carried out to study the dependence of resistance on temperature and magnetic fields. Temperature coefficient of resistance of the sensor was calculated as 1.03 × 10−3/°C. All implications arising from the study are presented. The results establish the aptness of the as-grown CNT film to be used as an active sensing material in thin film temperature sensors.

Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co3O4 Thin Films as Candidate Materials for Sensing Applications

2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Modulus ◽  
Data Storage ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Magnetic Sensors ◽  
Functional Coatings ◽  
Sensing Applications ◽  
Chemical Vapor Deposited

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.

scholarly journals Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
R. Lukose ◽  
M. Lisker ◽  
F. Akhtar ◽  
M. Fraschke ◽  
T. Grabolla ◽  
...  
Keyword(s):  
Large Scale ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Limiting Factors ◽  
Adhesion Properties ◽  
Si Substrates ◽  
Wetting Contact Angle ◽  
Angle Measurements ◽  
Chemical Vapor Deposited ◽  
Contact Angle Measurements

AbstractOne of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

Chemical-Vapor-Deposited Materials for High Thermal Conductivity Applications

MRS Bulletin ◽  
2001 ◽  
Vol 26 (6) ◽  
pp. 458-463 ◽  
Author(s):  
Jitendra S. Goela ◽  
Nathaniel E. Brese ◽  
Michael A. Pickering ◽  
John E. Graebner
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Thermal Conductivity ◽  
Solid Materials ◽  
Chemical Vapor Deposited

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.

Parametric Study of Nanostructure Variations on the Macroscopic Thermal and Electrical Behavior of Neat CNT Thin Film Networks

2011 ◽  
Author(s):  
Nikhil A. Ashtekar ◽  
David A. Jack
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Sensitivity Analysis ◽  
Carbon Nanotube ◽  
Probability Distribution ◽  
Electrical Response ◽  
Electrical Behavior ◽  
Commercial Applications ◽  
Nanotube Chirality

Carbon nanotube thin films are considered by many researchers as a material for the future in many electrical and thermal applications, but a lack of systematic physics-based modeling approaches to quantify the bulk thermal and electrical response due to nanostructure variations makes employing these thin films difficult for commercial applications. In this work we employ the previously presented 3D physics-based computational model for characterizing the bulk thermal and electrical response of a neat carbon nanotube thin film network involving stochastic distributions of length, diameter, chirality, orientation and values of intercontact resistivity obtained from the literature. The model is employed to test the sensitivity of bulk thermal and electrical conductivity on stochastic variations in the nanostructure parameters. We examine the sensitivity of the thin film networks to the experimentally obtained Weibull probability distribution for length and diameter. Additionally, we present a study to quantify the macroscopic conductivity dependence on the nanotube chirality ratio. Through these studies we present an approach that is very generic and can be used for the sensitivity analysis due to variations within the nanostructure.

Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction

2007 ◽  
Vol 22 (4) ◽  
pp. 319-323 ◽  
Author(s):  
Jianfeng Fang ◽  
Jing Huo ◽  
Jinyuan Zhang ◽  
Yi Zheng
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Transition Layer ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Thin Film ◽  
Chemical Vapor Deposited

The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.

Sign in / Sign up

Export Citation Format

Share Document