scholarly journals Development and Proof of Concept of a Miniaturized MEMS Quantum Tunneling Accelerometer Based on PtC Tips by Focused Ion Beam 3D Nano-Patterning

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3795
Author(s):  
Michael Haub ◽  
Martin Bogner ◽  
Thomas Guenther ◽  
André Zimmermann ◽  
Hermann Sandmaier
Keyword(s):  
Quantum Tunneling ◽  
Focused Ion Beam ◽  
Signal To Noise Ratio ◽  
Ion Beam ◽  
Injection System ◽  
Tunneling Effect ◽  
Mass System ◽  
Electrostatic Actuators ◽  
Organic Precursor ◽  
Dual Beam

Most accelerometers today are based on the capacitive principle. However, further miniaturization for micro integration of those sensors leads to a poorer signal-to-noise ratio due to a small total area of the capacitor plates. Thus, other transducer principles should be taken into account to develop smaller sensors. This paper presents the development and realization of a miniaturized accelerometer based on the tunneling effect, whereas its highly sensitive effect regarding the tunneling distance is used to detect small deflections in the range of sub-nm. The spring-mass-system is manufactured by a surface micro-machining foundry process. The area of the shown polysilicon (PolySi) sensor structures has a size smaller than 100 µm × 50 µm (L × W). The tunneling electrodes are placed and patterned by a focused ion beam (FIB) and gas injection system (GIS) with MeCpPtMe3 as a precursor. A dual-beam system enables maximum flexibility for post-processing of the spring-mass-system and patterning of sharp tips with radii in the range of a few nm and initial distances between the electrodes of about 30–300 nm. The use of metal–organic precursor material platinum carbon (PtC) limits the tunneling currents to about 150 pA due to the high inherent resistance. The measuring range is set to 20 g. The sensitivity of the sensor signal, which depends exponentially on the electrode distance due to the tunneling effect, ranges from 0.4 pA/g at 0 g in the sensor operational point up to 20.9 pA/g at 20 g. The acceleration-equivalent thermal noise amplitude is calculated to be 2.4–3.4 mg/. Electrostatic actuators are used to lead the electrodes in distances where direct quantum tunneling occurs.

scholarly journals Novel Design of an Extremely Miniaturized Accelerometer Based on Quantum Tunneling Effect

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1045
Author(s):  
Michael Haub ◽  
Sebastian Hummel ◽  
Martin Bogner ◽  
Hermann Sandmaier
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
High Sensitivity ◽  
Tunneling Effect ◽  
The Novel ◽  
Electrostatic Actuators ◽  
Operational Conditions ◽  
Sensor Structure ◽  
Constant Distance ◽  
Novel Design

This paper presents the design of an extremely miniaturized accelerometer based on the tunneling effect. Because of its high sensitivity the tunneling effect allows the detection of smallest deflections. The aim of the novel design is a large geometric miniaturization at the lowest possible natural frequency with a nominal acceleration of +/−1 g corresponding to a deflection of +/−9.36 Å. The poly-silicon (PolySi) sensor structure with a size (L × W) of 98 µm × 85 µm is designed in a way that the main displacement operates just in one direction. To lead the sensor into operational conditions, control a constant distance between the tunneling electrodes and perform self-test actuations two electrodes are placed below the sensor structure. The tunneling tip is deposited by a focused ion beam (FIB) to provide the tunneling section with a third pad on the substrate. Within this paper the focus is on the functional implementation of the structure, the investigation of the electrostatic actuators and the deposition of the tunneling tip by the FIB.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

Dual Beam Focused Ion Beam and Transmission Electron Microscopies of Nanoscale Sectioned Diatom Frustules

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
T Gutu ◽  
J Wu ◽  
C Jeffreys ◽  
C-H Chang ◽  
G Rorrer ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Microscopies ◽  
Dual Beam ◽  
Transmission Electron

scholarly journals Assessment of wear micromechanisms on a laser textured cemented carbide tool during abrasive-like machining by FIB/FESEM

Friction ◽  
2020 ◽  
Author(s):  
Shiqi Fang ◽  
Dirk Bähre ◽  
Luis Llanes
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Local Level ◽  
Surface Texturing ◽  
Laser Surface ◽  
Laser Surface Texturing ◽  
Near Surface ◽  
Dual Beam ◽  
Cemented Carbide Tool ◽  
Microstructural Integrity

Abstract The combined use of focused ion beam (FIB) milling and field-emission scanning electron microscopy inspection (FESEM) is a unique and successful approach for assessment of near-surface phenomena at specific and selected locations. In this study, a FIB/FESEM dual-beam platform was implemented to docment and analyze the wear micromechanisms on a laser-surface textured (LST) hardmetal (HM) tool. In particular, changes in surface and microstructural integrity of the laser-sculptured pyramids (effective cutting microfeatures) were characterized after testing the LST-HM tool against a steel workpiece in a workbench designed to simulate an external honing process. It was demonstrated that: (1) laser-surface texturing does not degrade the intrinsic surface integrity and tool effectiveness of HM pyramids; and (2) there exists a correlation between the wear and loading of shaped pyramids at the local level. Hence, the enhanced performance of the laser-textured tool should consider the pyramid geometry aspects rather than the microstructure assemblage of the HM grade used, at least for attempted abrasive applications.

Precision TEM Specimen Preparation for Integrated Circuits using Dual-Beam FIB Lift-Out Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 516-517
Author(s):  
Youren Xu ◽  
Chris Schwappach ◽  
Ron Cervantes
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Single Beam ◽  
Dual Beam ◽  
Technological Advances ◽  
Endpoint Control ◽  
Practical Standpoint ◽  
Beam Damage

Focused ion beam lift-out technique has become increasingly attractive to the TEM community due to its unique advantage of no mechanical grinding/polishing involved in the process [1-3]. The technique essentially consists of two parts: preparation of membrane using focused ion beam (FIB) and transfer of the membrane (lift-out) to a grid. Up to date, this technique has only been demonstrated on single beam FIB systems. From a practical standpoint, overall sample quality (thickness) and lack of end-point precision are two major issues associated with the conventional single beam FIB technique. These issues are primarily related to ion beam damage and endpoint control encountered during the final stages of specimen thinning. As a result, the widespread use of FIB lift-out technique for high precision TEM specimen preparation has been limited. Recent technological advances have made it possible to combine both an electron beam column and an ion beam column into an integrated dual beam-focused ion beam (DB-FIB) system.

Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

2011 ◽  
Vol 17 (6) ◽  
pp. 889-895 ◽  
Author(s):  
Lynne M. Gignac ◽  
Surbhi Mittal ◽  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Jeffrey W. Sleight
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Nanowire ◽  
Dual Beam ◽  
Transmission Electron ◽  
High Resolution Tem

AbstractThe ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

A Direct and Quantitative Three-Dimensional Reconstruction of the Internal Structure of Disordered Mesoporous Carbon with Tailored Pore Size

2013 ◽  
Vol 19 (3) ◽  
pp. 745-750 ◽  
Author(s):  
Juan Balach ◽  
Flavio Soldera ◽  
Diego F. Acevedo ◽  
Frank Mücklich ◽  
César A. Barbero
Keyword(s):  
Pore Size ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Quantitative Characterization ◽  
Resorcinol Formaldehyde ◽  
Dual Beam ◽  
Dimensional Reconstruction ◽  
A New Technique

AbstractA new technique that allows direct three-dimensional (3D) investigations of mesopores in carbon materials and quantitative characterization of their physical properties is reported. Focused ion beam nanotomography (FIB-nt) is performed by a serial sectioning procedure with a dual beam FIB-scanning electron microscopy instrument. Mesoporous carbons (MPCs) with tailored mesopore size are produced by carbonization of resorcinol-formaldehyde gels in the presence of a cationic surfactant as a pore stabilizer. A visual 3D morphology representation of disordered porous carbon is shown. Pore size distribution of MPCs is determined by the FIB-nt technique and nitrogen sorption isotherm methods to compare both results. The obtained MPCs exhibit pore sizes of 4.7, 7.2, and 18.3 nm, and a specific surface area of ca. 560 m2/g.

Characterization of Second-Phase Inclusion in Silicon Carbide Powders

2015 ◽  
Vol 821-823 ◽  
pp. 100-103
Author(s):  
Ta Ching Hsiao ◽  
Shen Tsao ◽  
Sergey Nagalyuk ◽  
Evgeny Mokhov
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Element Distribution ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Dual Beam ◽  
Metal Doped ◽  
Dopant Element

A specific transition metal is used as a dopant element in silicon carbide powders to create the compensation effect. According to ab-initio simulation, vanadium, chromium, and manganese-induced compensation decrease the lifetime of the acceptor carrier and cause higher resistance when boron is the main impurity. Since the silicon carbide lattice has low solubility, excess metal precipitates on the surface of powders, particularly on the grain boundaries. The compositions of matrix and precipitation in the powders reveal obvious differences between the two areas. The X-ray diffraction (XRD) pattern shows the structure of VSi2, which indicates the existence of a second phase. Dual-beam focused ion beam (DBFIB) is used to further analyze the geography inside the powders. A cross-section view by DBFIB shows a second phase in the grains with a composition similar to that in the grain boundary. Metal-doped silicon carbide powders are used as starting materials to conduct crystal growth with better dopant element distribution.

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