Characterization of Second-Phase Inclusion in Silicon Carbide Powders

2015 ◽  
Vol 821-823 ◽  
pp. 100-103
Author(s):  
Ta Ching Hsiao ◽  
Shen Tsao ◽  
Sergey Nagalyuk ◽  
Evgeny Mokhov
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Element Distribution ◽  
Second Phase ◽  
X Ray Diffraction ◽  
Dual Beam ◽  
Metal Doped ◽  
Dopant Element

A specific transition metal is used as a dopant element in silicon carbide powders to create the compensation effect. According to ab-initio simulation, vanadium, chromium, and manganese-induced compensation decrease the lifetime of the acceptor carrier and cause higher resistance when boron is the main impurity. Since the silicon carbide lattice has low solubility, excess metal precipitates on the surface of powders, particularly on the grain boundaries. The compositions of matrix and precipitation in the powders reveal obvious differences between the two areas. The X-ray diffraction (XRD) pattern shows the structure of VSi2, which indicates the existence of a second phase. Dual-beam focused ion beam (DBFIB) is used to further analyze the geography inside the powders. A cross-section view by DBFIB shows a second phase in the grains with a composition similar to that in the grain boundary. Metal-doped silicon carbide powders are used as starting materials to conduct crystal growth with better dopant element distribution.

A Direct and Quantitative Three-Dimensional Reconstruction of the Internal Structure of Disordered Mesoporous Carbon with Tailored Pore Size

2013 ◽  
Vol 19 (3) ◽  
pp. 745-750 ◽  
Author(s):  
Juan Balach ◽  
Flavio Soldera ◽  
Diego F. Acevedo ◽  
Frank Mücklich ◽  
César A. Barbero
Keyword(s):  
Pore Size ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Quantitative Characterization ◽  
Resorcinol Formaldehyde ◽  
Dual Beam ◽  
Dimensional Reconstruction ◽  
A New Technique

AbstractA new technique that allows direct three-dimensional (3D) investigations of mesopores in carbon materials and quantitative characterization of their physical properties is reported. Focused ion beam nanotomography (FIB-nt) is performed by a serial sectioning procedure with a dual beam FIB-scanning electron microscopy instrument. Mesoporous carbons (MPCs) with tailored mesopore size are produced by carbonization of resorcinol-formaldehyde gels in the presence of a cationic surfactant as a pore stabilizer. A visual 3D morphology representation of disordered porous carbon is shown. Pore size distribution of MPCs is determined by the FIB-nt technique and nitrogen sorption isotherm methods to compare both results. The obtained MPCs exhibit pore sizes of 4.7, 7.2, and 18.3 nm, and a specific surface area of ca. 560 m2/g.

scholarly journals Characterization of 4H Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone

2012 ◽  
Vol 1433 ◽  
Author(s):  
Andrew A. Woodworth ◽  
Ali Sayir ◽  
Philip G. Neudeck ◽  
Balaji Raghothamachar ◽  
Michael Dudley
Keyword(s):  
Silicon Carbide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Electrical Performance ◽  
Floating Zone ◽  
X Ray ◽  
Growth Method ◽  
Laser Heated

ABSTRACTCommercially available bulk silicon carbide (SiC) has a high number (>2000/cm2) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by X-ray transmission Laue diffraction patterns and X-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.

Nanostep Fabrication Using FIB Technology

2013 ◽  
Vol 655-657 ◽  
pp. 842-846
Author(s):  
Chen Ying Wang ◽  
Shu Ming Yang ◽  
Qi Jing Lin ◽  
Zhuang De Jiang
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Processing Parameters ◽  
Experimental Results ◽  
Typical Structure ◽  
Process Duration ◽  
Nano Fabrication ◽  
Dual Beam ◽  
The Relationship

The accuracy and traceability of measurement at nano-scale are directly related to nano-fabrication. Nanostep is typical structure, so the measurement and characterization of nanosteps are important to improve the accuracy of nano-fabrication. This paper studies on the relationship between the morphologic features of nanosteps and the processing parameters of a dual beam Focused Ion Beam (FIB). Nanosteps are fabricated with different depth of 50nm and 30nm. The experimental results show the depths of the nanosteps are affected by the sequence of the process and the processing energy. Although the relationship between the depth and process duration is linear, the depths of the nanosteps are not consistent with the design. The dimensions of the nanosteps at different positions are not constant because of the varying slope of the bottom and sidewall. It is necessary to optimize the processing parameters to achieve the designed dimensions.

scholarly journals DESY NanoLab

2016 ◽  
Vol 2 ◽  
Author(s):  
Andreas Stierle ◽  
Thomas F. Keller ◽  
Heshmat Noei ◽  
Vedran Vonk ◽  
Ralf Roehlsberger
Keyword(s):  
Magnetic Properties ◽  
Scanning Probe Microscopy ◽  
Focused Ion Beam ◽  
State Of The Art ◽  
Ion Beam ◽  
Scanning Probe ◽  
Light Sources ◽  
X Ray Diffraction ◽  
X Ray

The DESY NanoLab is a facility providing access to nano-characterization, nano-structuring and nano-synthesis techniques which are complementary to the advanced X-ray techniques available at DESY’s light sources. It comprises state-of-the art scanning probe microscopy and focused ion beam manufacturing, as well as surface sensitive spectroscopy techniques for chemical analysis. Specialized laboratory x-ray diffraction setups are available for a successful sample pre-characterization before the precious synchrotron beamtimes. Future upgrades will include as well characterization of magnetic properties.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

2016 ◽  
Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gate Oxide ◽  
Top Down ◽  
New Techniques ◽  
First Case ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

Ion Beam Imaging Methodology of Invisible Metal under Insulator Using High Energy Electron Beam Charging

2007 ◽  
Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou
Keyword(s):  
Metal Ion ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
High Energy ◽  
Advanced Technology ◽  
High Energy Electron ◽  
Common Assumption ◽  
Dual Beam ◽  
Imaging Methodology

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.

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