scholarly journals A 0.8 V, 5.3–5.9 GHz Sub-Sampling PLL with 196.5 fsrms Integrated Jitter and −251.6 dB FoM

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7648
Author(s):  
Shi Zuo ◽  
Jianzhong Zhao ◽  
Yumei Zhou
Keyword(s):  
Phase Noise ◽  
Root Mean Square ◽  
Supply Voltage ◽  
Cmos Process ◽  
Type I ◽  
Voltage Controlled Oscillator ◽  
Mean Square ◽  
Frequency Range ◽  
Output Frequency ◽  
Zero Phase

This paper proposes a hybrid dual path sub-sampling phase-locked loop (SSPLL), including a proportional path (P-path) and an integral path (I-path), with 0.8 V supply voltage. A differential master–slave sampling filter (MSSF), replacing the sub-sampling charge pump (SSCP), composed the P-path to avoid the degraded feature caused by the decreasing of the supply voltage. The I-path is built by a rail-to-rail SSCP to suppress the phase noise of the voltage-controlled oscillator (VCO) and avoid the trouble of locking at the non-zero phase offset (as in type-I PLL). The proposed design is implemented in a 40-nm CMOS process. The measured output frequency range is from 5.3 to 5.9 GHz with 196.5 fs root mean square (RMS) integrated jitter and −251.6 dB FoM.

Design and analysis of a low noise CMOS charge pump phase locked loop circuit

2021 ◽  
pp. 2140002
Author(s):  
Yanbo Chen ◽  
Shubin Zhang
Keyword(s):  
Phase Noise ◽  
Supply Voltage ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Low Noise ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Output Frequency ◽  
Power Supply Voltage ◽  
Supply Noise

Phase Locked Loop (PLL) circuit plays an important part in electronic communication system in providing high-frequency clock, recovering the clock from data signal and so on. The performance of PLL affects the whole system. As the frequency of PLL increases, designing a PLL circuit with lower jitter and phase noise becomes a big challenge. To suppress the phase noise, the optimization of Voltage Controlled Oscillator (VCO) is very important. As the power supply voltage degrades, the VCO becomes more sensitive to supply noise. In this work, a three-stage feedforward ring VCO (FRVCO) is designed and analyzed to increase the output frequency. A novel supply-noise sensing (SNS) circuit is proposed to suppress the supply noise’s influence on output frequency. Based on these, a 1.2 V 2 GHz PLL circuit is implemented in 110 nm CMOS process. The phase noise of this CMOS charge pump (CP) PLL is 117 dBc/Hz@1 MHz from test results which proves it works successfully in suppressing phase noise.

A 2.3 mW Multi-Frequency Clock Generator with −137 dBc/Hz Phase Noise VCO in 180 nm Digital CMOS Technology

2019 ◽  
Vol 29 (08) ◽  
pp. 2050130 ◽  
Author(s):  
Jagdeep Kaur Sahani ◽  
Anil Singh ◽  
Alpana Agarwal
Keyword(s):  
Phase Noise ◽  
Supply Voltage ◽  
Dead Zone ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Control Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Cmos Inverter ◽  
Digital Cmos

A fast phase frequency detector (PFD) and low gain low phase noise voltage-controlled oscillator (VCO)-based phase-locked loop (PLL) design are presented in this paper. PLL works in the frequency range of 0.025–1.6[Formula: see text]GHz, targeting various SoC applications. The proposed PFD, designed using CMOS dynamic logic, is fast and improves the locking time, dead zone and blind zone in the PLL. The standard CMOS inverter gate-based pseudo differential VCO is used in the PLL. Also, CMOS inverter is used as variable capacitor to tune the frequency of VCO with control voltage. The proposed PLL is designed in a 180[Formula: see text]nm CMOS process with supply voltage of 1.8[Formula: see text]V. The phase noise of VCO is [Formula: see text][Formula: see text]dBc/Hz at an offset frequency of 100[Formula: see text]MHz. The reference clock of 25[Formula: see text]MHz synthesizes the output clock of 1.6[Formula: see text]GHz with rms jitter of 0.642[Formula: see text]ps.

scholarly journals A Low Power Voltage Controlled Oscillator Design

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Manoj Kumar
Keyword(s):  
Power Consumption ◽  
Phase Noise ◽  
Supply Voltage ◽  
Nand Gate ◽  
Frequency Variation ◽  
Voltage Controlled Oscillator ◽  
Output Frequency ◽  
Voltage Controlled Oscillators ◽  
Delay Cell ◽  
Voltage Variation

The performance of voltage controlled oscillator (VCO) is of great importance for any telecommunication or data transmission network. Here, voltage controlled oscillators (VCOs) using three-transistor NAND gates have been designed. New delay cell with three-transistor NAND gate has been used for designing the ring based VCO circuits. Three-, five-, and seven-stage VCOs have been proposed. Output frequency has been controlled with supply voltage variation from 1.8 V to 2.4 V. Three stage VCO shows output frequency variation in the range of 3.2909 GHz to 4.2280 GHz whereas power consumption varies in the range of 335.4071 μW to 486.1816 μW. Five-stage VCO depicts frequency in the range of 1.9406 GHz to 2.5769 GHz with power consumption variation from 559.0118 μW to 810.3027 μW. Moreover a seven-stage VCO shows frequency variation from 1.3984 GHz to 1.8077 GHz. Power consumption of seven-stage VCO varies from 782.6165 μW to 1134.400 μW. Phase noise results for these VCOs have also been obtained. Power consumption, output frequency, and phase noise results of proposed circuits have been compared with earlier reported circuits, and the proposed circuits show significant improvements.

Low Phase Noise and Low Power Voltage-Controlled-Oscillator Using Current-Reuse Techniques for Wireless Communication Circuits

2013 ◽  
Vol 479-480 ◽  
pp. 1010-1013
Author(s):  
Tsung Han Han ◽  
Meng Ting Hsu ◽  
Cheng Chuan Chung
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Chip Area ◽  
Voltage Controlled Oscillators ◽  
Communication Circuits ◽  
5 Ghz ◽  
Low Phase Noise

In this paper, we present low phase noise and low power of the voltage-controlled oscillators (VCOs) for 5 GHz applications. This chip is implemented by Taiwan Semiconductor Manufacturing Company (TSMC) standard 0.18 μm CMOS process. The designed circuit topology is included a current-reused configuration. It is adopted memory-reduced tail transistor technique. At the supply voltage 1.5 v, the measured output phase noise is-116.071 dBc/Hz at 1MHz offset frequency from the carrier frequency 5.2 GHz. The core power consumption is 3.7 mW, and tuning range of frequency is about 1.3 GHz from 4.8 to 6.1 GHz. The chip area is 826.19 × 647.83 um2.

Low Power, Ring VCO with Pre-Charge and Pre-Discharge Circuit for 4 GHz–6.1 GHz Applications in 0.18 μm CMOS

2019 ◽  
Vol 28 (11) ◽  
pp. 1950182 ◽  
Author(s):  
Nitin Kumar ◽  
Manoj Kumar
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Noise ◽  
Supply Voltage ◽  
Control Voltage ◽  
Cmos Process ◽  
Output Frequency ◽  
Differential Ring ◽  
Low Phase Noise ◽  
High Output

The differential ring voltage controlled oscillator (VCO) is one of the critical devices in wireless communication system having excellent stability, controllability and noise rejection ability. A novel design of delay cell is proposed for the four staged CMOS differential ring VCO with high output frequency, low power consumption and low phase noise. The differential ring VCO utilizes multiloop dual delay path topology to acquire both high output frequency and low phase noise. Results have been achieved in TSMC 0.18-[Formula: see text]m CMOS process with a supply voltage ([Formula: see text]) 1.8[Formula: see text]V. The proposed design achieves an output frequency range of 4.029[Formula: see text]GHz to 6.122[Formula: see text]GHz and power of 4.475[Formula: see text]mW is consumed with control voltage variation from 1[Formula: see text]V to 2[Formula: see text]V. The proposed VCO exhibits [Formula: see text]89.7[Formula: see text]dBc/Hz phase noise at 1[Formula: see text]MHz offset frequency and the corresponding figure of merit (FoM) is [Formula: see text]155.9[Formula: see text]dBc/Hz. The design of differential ring VCO with novel delay stage has improved performance in terms of power consumption, output oscillation frequency and phase noise.

scholarly journals Low Phase Noise and Wide-Range Class-C VCO Using Auto-Adaptive Bias Technique

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1290
Author(s):  
Jeong-Yun Lee ◽  
Gwang Sub Kim ◽  
Goo-Han Ko ◽  
Kwang-Il Oh ◽  
Jae Gyeong Park ◽  
...  
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Wide Frequency Range ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Frequency Range ◽  
Wide Range ◽  
Class C ◽  
Low Phase Noise

This paper proposes a new structure of 24-GHz class-C voltage-controlled oscillator (VCO) using an auto-adaptive bias technique. The VCO in this paper uses a digitally controlled circuit to eliminate the possibility of start-up failure that a class-C structure can have and has low phase noise and a wide frequency range. To expand the frequency tuning range, a 3-bit cap-bank is used and a triple-coupled transformer is used as the core inductor. The proposed class-C VCO implements a 65-nm RF CMOS process. It has a phase noise performance of −105 dBc/Hz or less at 1-MHz offset frequency and the output frequency range is from 22.8 GHz to 27.3 GHz, which consumes 8.3–10.6 mW of power. The figure-of-merit with tuning range (FoMT) of this design reached 191.1 dBc/Hz.

Design of a Low-Phase-Noise LC Voltage Controlled Oscillator

2014 ◽  
Vol 519-520 ◽  
pp. 1095-1098
Author(s):  
Cheng Hong Dong ◽  
Chang Chun Zhang ◽  
Yu Feng Guo ◽  
Lei Lei Liu ◽  
Xin Cun Ji ◽  
...  
Keyword(s):  
Phase Noise ◽  
Figure Of Merit ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Voltage Controlled Oscillator ◽  
Frequency Range ◽  
Supply Current ◽  
Low Phase Noise ◽  
Lc Vco

A novel low phase noise LC Voltage Controlled Oscillator (LC-VCO) is designed in standard 0.18μm CMOS technology. Instead of common NMOS cross-pairs for a conventional complementary LC VCO, both body-biasing and Q-enhancement techniques are employed to provide a larger negative resistance for the VCO. Post-layout simulations showed that it can oscillate at a frequency range of 4.34-4.73GHz, and comsume a supply current of 1.52mA from a supply voltage of 1.8V. The VCO achieves a phase noise of -132.8dBc/Hz @ 1MHz offset and a figure of merit (FOM) of -195.9dBc/Hz at the frequency of 4.5GHz. A die area of 475μm×498.6μm is occupied.

A NOVEL WIDEBAND CMOS VCO USING SWITCH CAPACITORS ARRAY FOR RF APPLICATIONS

2012 ◽  
Vol 21 (05) ◽  
pp. 1250046
Author(s):  
MOHAMMAD NIABOLI-GUILANI ◽  
MAHROKH MAGHSOODI ◽  
ALIREZA SABERKARI ◽  
REZA MESHKIN
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Tuning Range ◽  
High Efficiency ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Voltage Variation ◽  
Low Power Dissipation ◽  
Tuning Frequency

This paper presents a novel low power consumption, low phase noise, and high tuning range CMOS cross-coupled voltage-controlled oscillator (VCO). Using common mode double-pseudo-resistance technique in the proposed circuit leads to low power dissipation without degrading the phase noise. Additionally, band-switching capacitor array is employed in order to increase the tuning range. The schematic circuit of the proposed VCO is simulated in 0.18 μm 1P6M CMOS process and simulation results show high efficiency of the proposed circuit. The overall tuning frequency range is from 1.7 GHz to 3.18 GHz (59%) with tuning voltage variation range from 0 V to 1.5 V. The proposed VCO circuit has phase noise of -102.6 and -124.3 dBc/Hz at 100 KHz and 1 MHz offset frequency from the carrier, respectively, while consumes 1.98 mW power at 1.5 V supply voltage.

Ground-Adjustable Inductor for Wide-Tuning VCO Design

2012 ◽  
Vol 256-259 ◽  
pp. 2373-2378
Author(s):  
Wu Shiung Feng ◽  
Chin I Yeh ◽  
Ho Hsin Li ◽  
Cheng Ming Tsao
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Supply Voltage ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Wide Tuning Range ◽  
Chip Area ◽  
Ground Plate

A wide-tuning range voltage-controlled oscillator (VCO) with adjustable ground-plate inductor for ultra-wide band (UWB) application is presented in this paper. The VCO was implemented by standard 90nm CMOS process at 1.2V supply voltage and power consumption of 6mW. The tuning range from 13.3 GHz to 15.6 GHz with phase noise between -99.98 and -115dBc/Hz@1MHz is obtained. The output power is around -8.7 to -9.6dBm and chip area of 0.77x0.62mm2.

A Very Low Power Quadrature VCO with Modified Current-Reuse and Back-Gate Coupling Topology

2017 ◽  
Vol 26 (11) ◽  
pp. 1750184 ◽  
Author(s):  
Qiuzhen Wan ◽  
Jun Dong ◽  
Hui Zhou ◽  
Fei Yu
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Noise ◽  
Tuning Range ◽  
Supply Voltage ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Current Reuse ◽  
Quadrature Vco ◽  
In Series

In this paper, a very low power modified current-reused quadrature voltage-controlled oscillator (QVCO) is proposed with the back-gate coupling technique for the quadrature signal generation. By stacking switching transistors in series like a cascode, the modified current-reused QVCO can be constructed in a totem-pole manner to reuse the dc biasing current and lower the power consumption. By utilizing the back-gates of switching transistors as coupling terminals to achieve the quadrature outputs, the back-gate coupled QVCO improves the phase noise and reduces the power consumption compared to the conventional coupling transistor based topology. Together with the modified current-reuse and back-gate coupling techniques, the proposed QVCO can operate at reduced supply voltage and power consumption while maintaining remarkable circuit performance in terms of low phase noise and wide tuning range. With a dc power of 1.6[Formula: see text]mW under a 0.8[Formula: see text]V supply voltage, the simulation results show the tuning range of the QVCO is from 2.36 to 3.04[Formula: see text]GHz as the tuning voltage is varied from 0.8 to 0.0[Formula: see text]V. The phase noise is [Formula: see text]118.3[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset frequency from the carrier frequency of 2.36[Formula: see text]GHz and the corresponding figure-of-merit of the QVCO is [Formula: see text]183.7[Formula: see text]dBc/Hz.

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