scholarly journals Design Research of Wearable Textile Antena

2019 ◽  
Vol 8 (2S8) ◽  
pp. 1546-1550
Keyword(s):  
Dielectric Constant ◽  
Electromagnetic Interference ◽  
Design Research ◽  
Stop Band ◽  
Ultra Wideband ◽  
Defected Ground Structure ◽  
Analysis And Design ◽  
Low Dielectric ◽  
Notch Band ◽  
Textile Antenna

In this paper comprehensive analysis and design of textile antenna is presented. Low dielectric constant of textile material makes them suitable to be used as substrate. The proposed antenna is fabricated on jeans substrate having dielectric constant of 1.6. The proposed textile antenna has hexagonal shape with microstrip line feed .U shape slot on the patch and defected ground structure is incorporated in the design to obtain desired passband and stopband. The dimension of proposed hexagonal patch is 6.44 mm and its area is 108mm2 which is very compact as compared to previous works .This antenna can be used in two frequency bands one is centered at 3.9 GHz with bandwidth of 2.5 GHz and another is centered at 8.6 GHz with bandwidth of 2.4GHz.Along with these passband there is one stop band in the frequency range 5.1GHz to 8.1 GHz. Due to wide bandwidth this antenna can also be called as an ultra wideband antenna with notch band to avoid electromagnetic interference with WLAN (5.1 -5.8 GHz) and satellite application.

UWB Filtering Power Divider with Two Narrow Notch-bands and Wide Stop-band

Frequenz ◽  
2017 ◽  
Vol 72 (1-2) ◽  
Author(s):  
Feng Wei ◽  
Xin-Yi Wang ◽  
Xin Tong Zou ◽  
Xiao Wei Shi
Keyword(s):  
Stop Band ◽  
Ultra Wideband ◽  
Power Divider ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Notch Band ◽  
Left Handed ◽  
Simulation And Experiment ◽  
Wilkinson Power Divider

AbstractA compact filtering ultra-wideband (UWB) microstrip power divider (PD) with two sharply rejected notch-bands and wide stopband is analyzed and designed in this paper. The proposed UWB PD is based on a conventional Wilkinson power divider, while two stub loaded resonators (SLRs) are coupled into two symmetrical output ports to achieve a bandpass filtering response. The simplified composite right/left-handed (SCRLH) resonators are employed to generate the dual notched bands. Defected ground structure (DGS) is introduced to improve the passband performance. Good insertion/return losses, isolation and notch-band rejection are achieved as demonstrated in both simulation and experiment.

scholarly journals Design of Dual Notch UWBMIMO Antenna with Defected Ground Structure.

2019 ◽  
Vol 9 (2S3) ◽  
pp. 318-322
Keyword(s):  
Dielectric Constant ◽  
Frequency Band ◽  
Ground Plane ◽  
Radiation Efficiency ◽  
Dual Band ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Maximum Gain ◽  
Notch Band

In this paper A dual band notched MIMO antennais designed with defected ground structure as ground plane and its characteristics are analyzed. The antenna covers UWB frequency ranging from 3.1-10.6 GHz with single notch band characteristics with maximum gain of 3.7 dB. The antenna provides radiation efficiency of 94% with front to back to ratio of 64%. The simulated studied is carried for many frequency band applications. The designed antenna shows patterns similar to that of a the dipole. The substrate used to design this antenna is FR4 withdimensions of 26mm x40mmx1.6mm and dielectric constant of 4.4.The notch bands are at WLAN and WiMax frequencies.

A compact UWB band-pass filter with a notch band using multi-mode stub-loaded resonators (MM-SLR)

2018 ◽  
Vol 10 (2) ◽  
pp. 227-233
Author(s):  
Gholamreza Karimi ◽  
Fatemeh Javidan ◽  
Amir Hossein Salehi
Keyword(s):  
Stop Band ◽  
Ultra Wideband ◽  
Pass Band ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Notch Band ◽  
Compact Size ◽  
Mathematical Formulas ◽  
Band Pass ◽  
Multi Mode

AbstractIn this paper, an ultra-wideband (UWB) band-pass filter (BPF) with a sharp notch band is presented. The UWB BPF consists of modified elliptical-ring and multi-mode stub-loaded resonator (MM-SLR). By adding the asymmetric tight coupled lines resonator via input/output (I/O) lines, it can be achieved UWB band-pass response. With adding two bends to the middle resonator, a notch band at 6.86 GHz is created, so that it can be controlled using the mathematical formulas (MF). In the meantime, the equivalent circuit of the middle resonator is obtained using L–C analysis. Measured results of fabricated filter have the advantage such as ultra-wide pass band (flandfHof the defined UWB pass band are 3.776 and 10.42 GHz, which satisfy the requirements of FCC-specified UWB limits), compact size, low insertion loss <0.65 dB and the stop band of the proposed filter is from 11.1 to 16.32 GHz with attenuation of −39.8 to −42.14 dB, respectively. The proposed UWB filter is realized using the substrate with dielectric constant of 2.2 and substrate height of 0.787 mm. Experimental verification is provided and good agreement has been found between simulation and measurement results.

A dual band-notched ultra-wideband monopole antenna with spiral-slots and folded SIR-DGS as notch band structures

2015 ◽  
Vol 8 (8) ◽  
pp. 1197-1206 ◽  
Author(s):  
Seyed Saeed Mirmosaei ◽  
Seyed Ebrahim Afjei ◽  
Esfandiar Mehrshahi ◽  
Mohammad M. Fakharian
Keyword(s):  
Communication Systems ◽  
Ground Plane ◽  
Surface Current ◽  
Monopole Antenna ◽  
Ultra Wideband ◽  
Dual Band ◽  
Impedance Bandwidth ◽  
Defected Ground Structure ◽  
Notch Band ◽  
Notched Band

In this paper, an ultra-wideband (UWB) planar monopole antenna with impedance bandwidth from 2.83 to 11.56 GHz and dual band-notched characteristics is presented. The antenna consists of a small rectangular ground plane, a bat-shaped radiating patch, anda 50-Ω microstrip line. The notched bands are realized by introducing two different types of structures. The half-wavelength spiral-slots are etched on the radiating patch to obtain a notched band in 5.15 5.925 GHz for WLAN, HIPERLAN, and DSRC systems. Based on the single band-notched UWB antenna, the second notched band is realized by etching a folded stepped impedance resonator as defected ground structure on the ground plane for WiMAX and C-band communication systems. The notched frequencies can be adjusted by altering the length of resonant cells. Surface current distributions and equivalent circuit are used to illustrate the notched mechanism. The performance of this antenna both by simulation and by experiment indicates that the proposed antenna is suitable and a good candidate for UWB applications.

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Skin–core structured fluorinated MWCNTs: a nanofiller towards a broadband dielectric material with a high dielectric constant and low dielectric loss

2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Epoxy Composite ◽  
Low Dielectric ◽  
High Dielectric

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

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