Growth Process of SiC Grains Prepared by High-energy Microwave Irradiation

2014 ◽  
Vol 29 (2) ◽  
pp. 149-154 ◽  
Author(s):  
Shan HUANG ◽  
Ji-Gang WANG ◽  
Song LIU ◽  
Fan LI
Keyword(s):  
Microwave Irradiation ◽  
Growth Process ◽  
High Energy

scholarly journals Study on Magnetite Ore Crushing Assisted by Microwave Irradiation

Minerals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1127
Author(s):  
Jiawang Hao ◽  
Qingwen Li ◽  
Lan Qiao
Keyword(s):  
Microwave Irradiation ◽  
Mining Industry ◽  
Damage Mechanism ◽  
Wave Impedance ◽  
High Energy ◽  
Rock Breaking ◽  
Energy Utilization ◽  
Magnetite Ore ◽  
Irradiation Power ◽  
Promising Solution

High energy consumption in ore crushing brings great challenges to the mining industry. Microwave irradiation provides a promising solution for rock breaking. However, there is currently a lack of detailed understanding of the microwave parameters regarding magnetite ore. The purpose of this study is to fully understand the potential value of microwave irradiation applied in auxiliary crushing of magnetite ore. It is typically found that increasing power reduces the mechanical properties of ore, increasing energy utilization, and crushing degree, more than extending time. Based on wave impedance, this reveals the dependence of energy utilization on thermal damage. Increasing irradiation power, time and cooling rate will cause more transgranular cracks and cleavage tears in the crushed ore. Based on the separate microwave response of several minerals, the microwave-damage mechanism of magnetite ore is further demonstrated.

Reflected High Energy Electron Diffraction Optimizing GaSb Film Growth Process

2020 ◽  
Vol 57 (23) ◽  
pp. 231603
Author(s):  
房丹 Fang Dan ◽  
张强 Zhang Qiang ◽  
李含 Li Han ◽  
谷开慧 Gu Kaihui
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Film Growth ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Lithium Dendrite Growth Process and Research Progress of its Inhibition Methods

2021 ◽  
Vol 1027 ◽  
pp. 42-47
Author(s):  
Hao Ran Zheng
Keyword(s):  
Growth Process ◽  
Specific Capacity ◽  
Development Trend ◽  
High Energy ◽  
High Energy Density ◽  
Research Progress ◽  
Future Research ◽  
Battery Life ◽  
Lithium Dendrites ◽  
Lithium Dendrite

Metal lithium anodes, with extremely high specific capacity, low density, and lowest potential, are considered to be the most promising anode materials for next-generation high-energy density batteries. However, in the process of repeated plating and stripping of lithium, lithium dendrites are easily grown on the surface of the metal lithium anode, which greatly reduces the capacity of the battery, even causes hidden safety risks and shortens the battery life. This paper reviews the modification methods of lithium anodes based on the growth process of lithium dendrites, and introduces several current modification methods, including electrolyte additives, artificial SEI and new structure of lithium anodes. Finally, the future research direction and development trend of metal lithium anodes are prospected.

Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation

2020 ◽  
Vol 20 (8) ◽  
pp. 4740-4745
Author(s):  
Shin-Yi Min ◽  
Won-Ju Cho
Keyword(s):  
Molecular Structure ◽  
Microwave Irradiation ◽  
Conduction Mechanism ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
High Resistance State ◽  
High Energy ◽  
Metal Insulator Metal ◽  
Resistance State

In this study, we fabricated a resistive random access memory (ReRAM) of metal-insulator-metal structures using a hydrogen silsesquioxane (HSQ) film that was deposited by a low-cost solution process as a resistance switching (RS) layer. For post-deposition annealing (PDA) to improve the switching performance of HSQ-based ReRAMs, we applied high energy-efficient microwave irradiation (MWI). For comparison, ReRAMs with an as-deposited HSQ layer or a conventional thermally annealed (CTA) HSQ layer were also prepared. The RS characteristics, molecular structure modification of the HSQ layer, and reliability of the MWI-treated ReRAM were evaluated and compared with the as-deposited or CTA-treated devices. Typical bipolar RS (BRS) behavior was observed in all the fabricated HSQ-based ReRAM devices. In the low-voltage region of the high-resistance state (HRS) as well as the low-resistance state, current flows through the HSQ layer by an ohmic conduction mechanism. However, as the applied voltage increases in HRS, the current slope increases nonlinearly and follows the Poole–Frenkel conduction mechanism. The RS characteristics of the HSQ layer depend on the molecular structure, and when the PDA changes from a cage-like structure to a cross-linked network, memory characteristics are improved. In particular, the MWI-treated HSQ ReRAM has the largest memory window at the smallest operating power and demonstrated a stable endurance during the DC cycling test over 500 times and reliable retention at room (25 °C) and high (85 °C) temperatures for 104 seconds.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Variations in Magnetic Hyperfine fields for Thin Epitaxial Heterostructures Of (110)Fe ON (111)Ag

1989 ◽  
Vol 151 ◽  
Author(s):  
C. J. Gutierrez ◽  
S. H. Mayer ◽  
Z. Q. Qiu ◽  
H. Tang ◽  
J. C. Walker
Keyword(s):  
Electron Diffraction ◽  
Epitaxial Growth ◽  
Growth Process ◽  
High Energy ◽  
Thin Layers ◽  
High Energy Electron ◽  
Hyperfine Fields ◽  
Iron Films ◽  
Magnetic Heterostructures ◽  
Epitaxial Heterostructures

ABSTRACTWe have made a study of magnetic heterostructures involving the epitaxial growth of (110)Fe on (111)Ag. The flatness and continuity of the films was verified by Reflection High Energy Electron Diffraction during the growth process. A series of structures were made with very thin intervening silver layers with thicker iron layers. The doping of appropriate layers by enriched Fe57 made it possible to examine the magnetic structure of the iron films as a function of depth. Preliminary results indicate that thin layers of silver sandwiched between two very thin Fe layers are able to transmit conduction electron polarization, resulting in iron behavior which resembles that of bulk iron. Implications of these results for understanding the nature of the magnetization of iron will be addressed in the following.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).

1991 ◽  
Vol 237 ◽  
Author(s):  
M. Lopez ◽  
Y. Takano ◽  
K. Pak ◽  
H. Yonezu
Keyword(s):  
Growth Process ◽  
Three Dimensional ◽  
High Energy ◽  
Two Dimensional ◽  
Spot Intensity ◽  
Interlayer Thickness ◽  
High Energy Electron ◽  
Initial Stage ◽  
Dimensional Growth ◽  
Si Films

ABSTRACTThe growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity. From the presence of RHEED oscillations during the initial stage of the growth of Si on GaAs we infer a two-dimensional growth with nucleation on the terraces up to a thickness of 3 ML. During the posterior growth of GaAs on the pseudomorphic Si films, a tendency towards three dimensional growth was observed. This tendency increased with the Si interlayer thickness. The causes of the formation of these islands are discussed.

scholarly journals In situ temperature profile measurements with high-energy X-rays as a probe of optical floating zone crystal growth environment

2020 ◽  
Vol 53 (4) ◽  
pp. 982-990
Author(s):  
Jonathan J. Denney ◽  
Yusu Wang ◽  
Adam A. Corrao ◽  
Guanglong Huang ◽  
David Montiel ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
High Energy ◽  
Air Cooling ◽  
Temperature Profiles ◽  
Measured Temperature ◽  
X Rays ◽  
Floating Zone ◽  
Growth Environment ◽  
Crystal Growth Process

The ability of optical floating zone (OFZ) furnaces to rapidly produce large single crystals of complex emerging materials has had a transformative effect on many scientific fields that require samples of this type. However, the crystal growth process within the OFZ furnace is not well understood owing to the challenges involved in monitoring the high-temperature crystal growth process. Novel beamline-compatible optical furnaces that approximate the inhomogeneous growth environment within an OFZ furnace have been fabricated and tested in high-energy synchrotron beamlines. It is demonstrated that temperature profiles can be effectively extracted from powder diffraction data collected on polycrystalline ceramic rods heated at their tip. Furthermore, these measured temperature profiles can be accurately reproduced using a heat-transfer model that accounts for solid-state thermal conduction, partial sample lamp power absorption, convective air cooling and radiative cooling, allowing key thermal parameters such as thermal conductivity to be extracted from experimental data.

Recovery of high-integrity mRNA from brains of rats killed by high-energy focused microwave irradiation

1999 ◽  
Vol 4 (3) ◽  
pp. 295-302 ◽  
Author(s):  
Michael Mayne ◽  
P.Nickolas Shepel ◽  
Jonathan D Geiger
Keyword(s):  
Microwave Irradiation ◽  
High Energy ◽  
High Integrity
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