Threshold-Voltage Modeling of Double-Gate MOSFETs by Considering Drain Bias

2007 ◽  
Vol 51 (96) ◽  
pp. 275
Author(s):  
Byung-Kil CHOI ◽  
Kyoung-Rok HAN ◽  
Young Min KIM ◽  
Ki-Heung PARK ◽  
Jong-Ho LEE ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Double Gate ◽  
Drain Bias

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

2021 ◽  
pp. 2101036
Author(s):  
Jiali Yi ◽  
Xingxia Sun ◽  
Chenguang Zhu ◽  
Shengman Li ◽  
Yong Liu ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Full Range ◽  
Logic Circuits ◽  
Double Gate

Real-Time External Compensation of Threshold Voltage Shift Using Double-Gate Oxide TFTs in a Gate Driving System

2016 ◽  
Vol 12 (9) ◽  
pp. 892-897 ◽  
Author(s):  
Bong-Hyun You ◽  
Soo-Yeon Lee ◽  
Seok-Ha Hong ◽  
Jae-Hoon Lee ◽  
Hyun-Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Driving System ◽  
Oxide Tfts ◽  
Gate Driving

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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