Changes in the Spectral Characteristics of Aluminum Films Deposited under Assisting Argon Ion Beam

2015 ◽  
Vol 1084 ◽  
pp. 11-15
Author(s):  
Sergey P. Umnov ◽  
Oleg Kh. Asainov ◽  
Svetlana N. Popova ◽  
Aleksey N. Lemachko
Keyword(s):  
Magnetron Sputtering ◽  
Ion Beam ◽  
Spectral Characteristics ◽  
Crystal Defects ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
X Ray ◽  
Ion Assistance ◽  
Argon Ion ◽  
Uv Range

High-reflectance aluminum films are widely used in applied optics. As part of this work, we deposited aluminum films on glass substrates by magnetron sputtering using argon ion beam assistance. The reflectivity of the films obtained was measured on the SF-256 spectrophotometer. The microstructure and topology of the films were examined with a transmission electron microscope (TEM), X-ray diffraction (XRD) and atomic force microscope (AFM). The studies have shown that the aluminum films deposited with ion assistance have higher reflectance in the UV range than the films formed by magnetron sputtering alone. The results of TEM and AFM measurements show that the geometric factor (crystallite size, surface roughness) is not the reason for the increase of reflectivity. X-ray diffraction analyses have shown a significant increase in microstress in the aluminum films deposited with ion assistance, which is caused by an increase in the defect density of the vacancy-type crystal structure. The results have shown that the increase in the density of crystal defects leads to an increase in reflectance in the UV range.

Ion Beam Deposition of Calcium Hydroxyapatite

1987 ◽  
Vol 110 ◽  
Author(s):  
B. L. Barthell ◽  
T. A. Archuleta ◽  
Ram Kossowsky
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Calcium Hydroxyapatite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Testing ◽  
Ion Beam Deposition ◽  
Argon Ion ◽  
Scanning Electron ◽  
Beam Deposition

AbstractCalcium hydroxyapatite has been sputtered on glass and Ti-6Al-4V substrates using a 1.5-kV argon ion beam. The films have been examined by x-ray diffraction analysis, energy dispersive spectroscopy, scanning electron microscopy, and adhesion testing. Results of this experimentation are presented.

scholarly journals Glancing-incidence focussed ion beam milling: A coherent X-ray diffraction study of 3D nano-scale lattice strains and crystal defects

2018 ◽  
Vol 154 ◽  
pp. 113-123 ◽  
Author(s):  
Felix Hofmann ◽  
Ross J. Harder ◽  
Wenjun Liu ◽  
Yuzi Liu ◽  
Ian K. Robinson ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Ion Beam ◽  
Crystal Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nano Scale ◽  
Lattice Strains ◽  
Focussed Ion Beam

Deposition Of Aluminium Nitride Film By Ion Beam Enhanced Reactive Magnetron Sputtering

1991 ◽  
Vol 223 ◽  
Author(s):  
R. F. Huang ◽  
L. S. Wen ◽  
H. Wang ◽  
J. Wu ◽  
R. J. Hong
Keyword(s):  
Magnetron Sputtering ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Aluminium Nitride ◽  
Reactive Magnetron Sputtering ◽  
Nitride Film ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTAluminium nitride film has been synthesized at substrate temperatures lower than 100 °C by using ion beam enhanced reactive magnetron sputtering. The growth rate was much higher than that obtained by usual physical vapor deposition at low substrate temperatures. The stoichiometry of the film was controlled by varying the resultant current of the ion beam used and identified by X-ray diffraction analysis. The optical properties of the film were also studied.

Influence of Crystal Defects on the Reflectivity of the Aluminum

2015 ◽  
Vol 756 ◽  
pp. 164-168
Author(s):  
S.P. Umnov ◽  
O.Kh. Asainov ◽  
A.N. Lemachko
Keyword(s):  
Ion Beam ◽  
Xrd Analysis ◽  
Crystal Defects ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Uv Reflectance ◽  
Argon Ion

The effect of ion-assisted deposition of the Al films on their UV reflectance is investigated in this paper. The films' reflectance is measured by a spectrophotometer. The obtained films are examined by using transmission electron microscopy (TEM), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The TEM and AFM measurements allow the determination of the size of crystallites in a film and its microstructure. The XRD analysis reveals that the films deposited with argon ion-beam assist are characterized by much higher microstress levels compared to the films deposited without ion assist. The comparison of the Al films’ reflectance measurements indicate that the films with a higher microstress level (hence, higher defect concentration) are characterized by the enhanced reflectance in the UV region. The conducted investigation shows that the defects of the Al films’ crystalline structure affect its optical properties.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

scholarly journals Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

Membranes ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 373
Author(s):  
Wen-Yen Lin ◽  
Feng-Tsun Chien ◽  
Hsien-Chin Chiu ◽  
Jinn-Kong Sheu ◽  
Kuang-Po Hsueh
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Mg Content

Zirconium-doped MgxZn1−xO (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2/Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained MgxZn1−xO(002) and ZrO2(200) coupled with Mg(OH)2(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr4+ from ZrO2(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.

Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker
Keyword(s):  
Electron Diffraction ◽  
Depth Distribution ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis ◽  
Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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