Tensile Behaviour and Fracture Characteristics of Polydimethylsiloxane (PDMS) Filled Silica Composites

2015 ◽  
Vol 1087 ◽  
pp. 6-10
Author(s):  
Mohd Azham Azmi ◽  
Sufiah Mohamad Yahya ◽  
Sufizar Ahmad ◽  
Hariati Taib

The focus of this study is to investigate the mechanical properties and fracture behaviour of polydimethylsiloxane filled crystalline silica composites (PDMS/CS) upon tensile loading. The PDMS/CS composites were fabricated by using casting method and cured at room temperature for 24 hours. Crystalline silica (CS) were added to PDMS at compositions of 2, 6, 10 wt%. The tensile properties of PDMS/2wt%CS showed that the tensile stress were improved by 4.3%. Fracture behaviour as determined by the characteristic of fracture surface of pure PDMS and PDMS/CS composites were analysed using Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). Observation via FESEM and AFM indicated different fracture characteristic of filled PDMS and unfilled PDMS. The addition of CS as fillers were indeed proven to improve the strength of the composites.

Author(s):  
K. A. Fisher ◽  
M. G. L. Gustafsson ◽  
M. B. Shattuck ◽  
J. Clarke

The atomic force microscope (AFM) is capable of imaging electrically conductive and non-conductive surfaces at atomic resolution. When used to image biological samples, however, lateral resolution is often limited to nanometer levels, due primarily to AFM tip/sample interactions. Several approaches to immobilize and stabilize soft or flexible molecules for AFM have been examined, notably, tethering coating, and freezing. Although each approach has its advantages and disadvantages, rapid freezing techniques have the special advantage of avoiding chemical perturbation, and minimizing physical disruption of the sample. Scanning with an AFM at cryogenic temperatures has the potential to image frozen biomolecules at high resolution. We have constructed a force microscope capable of operating immersed in liquid n-pentane and have tested its performance at room temperature with carbon and metal-coated samples, and at 143° K with uncoated ferritin and purple membrane (PM).


2010 ◽  
Vol 663-665 ◽  
pp. 324-327
Author(s):  
Chao Song ◽  
Rui Huang

The germanium film and Ge/Si multilayer structure were fabricated by magnetron sputtering technique on silicon substrate at temperatures of 500°C. Raman scattering spectroscopy measurements reveal that the nanocrystalline Ge occurs in both kinds of samples. Furthermore, from the atomic force microscopy (AFM) results, it is found that the grain size as well as spatially ordering distribution of the nc-Ge can be modulated by the Ge/Si multilayer structure. The room temperature photoluminescence was also observed in the samples. However, compared with that from the nc-Ge film, the intensity of PL from the nc-Ge/a-Si multilayer film becomes weaker, which is attributed to its lower volume fraction of crystallized component.


Author(s):  
Lin Zhang ◽  
Bai An ◽  
Takashi Iijima ◽  
Chris San Marchi ◽  
Brian Somerday

The behaviors of hydrogen transport and hydrogen-assisted cracking in hydrogen-precharged SUS304 austenitic stainless steel sheets in a temperature range from 177 to 298 K are investigated by a combined tensile and hydrogen release experiment as well as magnetic force microscopy (MFM) based on atomic force microscopy (AFM). It is observed that the hydrogen embrittlement increases with decreasing temperature, reaches a maximum at around 218 K, and then decreases with further temperature decrease. The hydrogen release rate increases with increasing strain until fracture at room temperature but remains near zero level at and below 218 K except for some small distinct release peaks. The MFM observations reveal that fracture occurs at phase boundaries along slip planes at room temperature and twin boundaries at 218 K. The role of strain-induced martensite in the hydrogen transport and hydrogen embrittlement is discussed.


2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.


1998 ◽  
Vol 05 (01) ◽  
pp. 387-392 ◽  
Author(s):  
D. Abriou ◽  
D. Gagnot ◽  
J. Jupille ◽  
F. Creuzet

The growth mode of silver films deposited at room temperature on TiO 2(110) surfaces has been examined by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) in ultrahigh vacuum (UHV) conditions, On clean vacancy-free TiO 2(110) surfaces, 0.1-nm-thick (on average) Ag deposits form a two-dimensional (2D) layer. When the thickness of the silver overlayer is increased, 3D clusters are shown to appear while the 2D film is preserved, furthermore, the influence of surface oxygen vacancies on the growth of Ag/TiO 2(110) is evidenced by well-characterized differences in the morphology of 9-nm-thick silver deposits.


2005 ◽  
Vol 16 (3) ◽  
pp. S68-S72 ◽  
Author(s):  
Masayuki Abe ◽  
Yoshiaki Sugimoto ◽  
Seizo Morita

1995 ◽  
Vol 10 (9) ◽  
pp. 2159-2161 ◽  
Author(s):  
J.H. Schneibel ◽  
L. Martínez

Fe–40 at. % Al–0.1 at. % B specimens were polished flat, strained at room temperature, and examined in an atomic force microscope. The angles of height contours perpendicular to the slip lines were interpreted as shear strains and were statistically evaluated. The frequency distributions of these shear strains correlated well with the macroscopic strains. The maximum shear strains found were not much larger than the macroscopic strains. In particular, no steep slip steps corresponding to large local shears were found.


2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.


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