Chemical Wet Etching of Silicon Wafers from a Mixture of Concentrated Acids

2011 ◽  
Vol 264-265 ◽  
pp. 1027-1032 ◽  
Author(s):  
M.R. Ismail ◽  
Wan Jeffrey Basirun
Keyword(s):  
Surface Roughness ◽  
Surface Condition ◽  
Surface Damage ◽  
Wet Etching ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Wet Chemical ◽  
Thinning Process

Warpage on the backside of silicon wafer after thinning process is examined. The thinning process includes back-grinding (BG) and wet chemical etching (WCE). Results of wafer warpage were compared to sub-surface damage from Transmission Electron Microscopy (TEM) analysis and showed that sub-surface damage on the backside of the silicon 100 would induce high wafer warpage, and reduced wafer strength. Further studies from surface roughness and topography of each surface finish is obtained by Atomic Force Microscopy (AFM) and SEM show that low surface roughness is in accordance with smooth surface condition, which comes after the wet etching process.

Effect of Surface Chemistry on Ruthenium Wet Etching

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Wet Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Metal Free ◽  
Atomic Force ◽  
Different Types ◽  
Effect Of Surface

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

Improved Surface Roughness at Poly-Oxide/Poly-Si Interface by a Novel Oxidation Method

1994 ◽  
Vol 343 ◽  
Author(s):  
M.C. Jun ◽  
J.W. Kim ◽  
K.B. Kim ◽  
B.C. Ahn ◽  
M.K. Han
Keyword(s):  
Electron Microscopy ◽  
Surface Roughness ◽  
Oxide Layer ◽  
The Novel ◽  
Oxidation Method ◽  
Force Microscopy ◽  
Silicon Source ◽  
Atomic Force ◽  
Transmission Electron ◽  
Intermediate Oxide

ABSTRACTWe present a novel oxidation method to improve the surface roughness at the poly-oxide/poly-Si interface. Instead of directly oxidizing the poly-Si to the desired thickness of the SiO2, a thin oxide layer is thermally grown on the poly-Si layer and then an a-Si layer is deposited on the top of the oxide layer. The a-Si layer is used as a silicon-source during next step of oxidation. The a-Si layer is fully oxidized until the poly-oxide/poly-Si interface advances below the initial interface. For comparison, the poly-oxide/poly-Si interface is also obtained by the conventional oxidation method. The surface roughness at the interface is investigated using transmission electron microscopy (TEM) and atomic force microscopy (AFM). For the novel oxidation method with the 50 Å thick intermediate oxide, the rms surface roughness at the poly-oxide/poly-Si interface is 30 Å, whereas that is 120 Å for the conventional method.

Ta2O5-Incorporated WO3 Nanocomposite Film for Improved Electrochromic Performance in an Acidic Condition

2006 ◽  
Vol 6 (11) ◽  
pp. 3572-3576 ◽  
Author(s):  
Hee-Sang Shim ◽  
Hyo-Jin Ahn ◽  
Youn-Su Kim ◽  
Yung-Eun Sung ◽  
Won Bae Kim
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Potential Cycling ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Continuous Potential ◽  
Chemical States ◽  
The Stability

We report electrochromic and electrochemical properties of a WO3-Ta2O5 nanocomposite electrode that was fabricated from co-sputtering. Transmission electron microscopy (TEM)images of the WO3-Ta2O5 nanocomposite electrode revealed that morphology of the WO3 film was changed by incorporation of Ta2O5 nanoparticles, and their chemical states were confirmed to be W6+ and Ta5+ oxides from X-ray photoelectron spectroscopy (XPS). The introduction of Ta2O5 to the WO3 film played a role in alleviating surface roughness increase during continuous potential cycling; whereas the surface roughness of the WO3 film was increased from ca. 3.0 nm to ca. 13.4 nm after 400 cycles, the roughness increase on the WO3-Ta2O5 was significantly reduced to 4.2 nm after 400 cycles, as investigated by atomic force microscopy (AFM). This improvement of the stability by adding Ta2O5 may be responsible for the enhanced electrochemical and optical properties over long-term cycling with the WO3-Ta2O5 nanocomposite electrode.

Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Huixin Xiu ◽  
Pedro MFJ Costa ◽  
Matthias Kauer ◽  
Tim M Smeeton ◽  
Stewart E Hooper ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Extended Defects ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type ◽  
Nitride Laser ◽  
Cladding Layers

ABSTRACTThis paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects – possibly inversion domains – exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.

scholarly journals Use of Atomic Force Microscopy and Transmission Electron Microscopy for Correlative Studies of Bacterial Capsules

2008 ◽  
Vol 74 (17) ◽  
pp. 5457-5465 ◽  
Author(s):  
Oleg Stukalov ◽  
Anton Korenevsky ◽  
Terry J. Beveridge ◽  
John R. Dutcher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Shewanella Oneidensis ◽  
Geobacter Sulfurreducens ◽  
Phase Imaging ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACT Bacteria can possess an outermost assembly of polysaccharide molecules, a capsule, which is attached to their cell wall. We have used two complementary, high-resolution microscopy techniques, atomic force microscopy (AFM) and transmission electron microscopy (TEM), to study bacterial capsules of four different gram-negative bacterial strains: Escherichia coli K30, Pseudomonas aeruginosa FRD1, Shewanella oneidensis MR-4, and Geobacter sulfurreducens PCA. TEM analysis of bacterial cells using different preparative techniques (whole-cell mounts, conventional embeddings, and freeze-substitution) revealed capsules for some but not all of the strains. In contrast, the use of AFM allowed the unambiguous identification of the presence of capsules on all strains used in the present study, including those that were shown by TEM to be not encapsulated. In addition, the use of AFM phase imaging allowed the visualization of the bacterial cell within the capsule, with a depth sensitivity that decreased with increasing tapping frequency.

A Comparison of AFM, SEM, and TEM Analysis of AL/SI/CU Thin Films

1992 ◽  
Vol 260 ◽  
Author(s):  
K. L. Westra ◽  
D. J. Thomson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Finite Size ◽  
Sem Analysis ◽  
Tem Analysis ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Sputter Deposited

ABSTRACTAtomic Force microscopy, scanning electron microscopy, and transmission electron microscopy was used to study Al/Si/Cu films sputter deposited at 2 and 45 mTorr. AFM and SEM analysis shows the films to consist of columnar structures commonly seen in PVD deposited thin films, while the TEM analysis showed the films be polycrystalline. Comparing the columnar structures seen in the AFM and SEM study to the grains found in the TEM study, we conclude that the columns consist of single grains. Thus for these films AFM or SEM analysis can be used to determine the grain size. Finally, an AFM scan of a Al/Si/Cu deposited via was performed. The AFM image clearly shows the high resolution of the AFM, while it also illustrates the problems caused by the finite size of the AFM tip.

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

2008 ◽  
Vol 600-603 ◽  
pp. 243-246 ◽  
Author(s):  
Ruggero Anzalone ◽  
Andrea Severino ◽  
Giuseppe D'Arrigo ◽  
Corrado Bongiorno ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Growth Process ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Impact

The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the silicon growth precursor. With this precursor it has been shown that it is possible to simultaneously increase the growth rate of the process and avoid the nucleation of silicon droplets in the gas phase. Growth experiments were conducted on three (3) Si substrate orientations in order to assess the impact of the Si substrate on the resulting 3C-SiC film. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) analysis show the important role of the substrate orientation for the growth process. The different orientation of the substrate modifies the morphology of the 3C-SiC crystalline structure, mostly by changing the density of micro-twins and stacking faults inside the film.

Manufacturable 300mm Wafer Thinning for 3D Interconnect Applications

2010 ◽  
Vol 1249 ◽  
Author(s):  
Jamal Qureshi ◽  
Raymond Caramto ◽  
Stephen Olson ◽  
Jerry Mase ◽  
Toshihiro Ito ◽  
...  
Keyword(s):  
Thickness Variation ◽  
Force Microscopy ◽  
Critical Elements ◽  
Atomic Force ◽  
Transmission Electron ◽  
Wafer Thickness ◽  
Total Thickness Variation ◽  
Silicon Vias ◽  
Wafer Thinning ◽  
Thinning Process

Abstract3D interconnect wafer-to-wafer or die-to-wafer integration requires a wafer thinning operation to expose copper (Cu)-filled through-silicon vias (TSVs) from the backside of the wafer. The wafer thinning flow uses edge trim, backgrind, backpolish, and chemical mechanical polishing (CMP). This paper presents an overview of the wafer grinding process. We have demonstrated the capability to edge-trim and backgrind 300 mm TSV and non-TSV wafers down to 30 microns (μm) while bonded to a handle wafer. TSV wafers were further processed on a CMP tool to remove the last few microns of Si, exposing the Cu-filled TSVs. Metrology techniques were used to inspect and measure the wafer edge trim and final thinned wafer thickness. The quality of the thinned wafer was characterized by atomic force microscopy (AFM) to observe surface roughness and by transmission electron microscopy (TEM) to quantify crystalline damage below the surface of the thinned wafer. Further characterization included measuring wafer thickness, total thickness variation (TTV), bow, and warp. Exposed TSVs were characterized by laser microscope to measure the height of Cu protrusions. These critical elements of a manufacturing-worthy 300 mm wafer thinning process for 3D are discussed.

scholarly journals Green Synthesis of Silver Nanoparticles Using Hibiscus sabdariffa Leaves Extract

2021 ◽  
Vol 3 (1) ◽  
pp. 76-81
Author(s):  
Siti Husnaa Mohd Taib ◽  
Kamyar Shameli ◽  
Roshafima Rasit Ali ◽  
Zahra Izadiyan ◽  
Zatil Izzah Ahmad Tarmizi
Keyword(s):  
Silver Nanoparticles ◽  
Hibiscus Sabdariffa ◽  
Ag Nps ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Size Of Particles ◽  
Average Size

The present paper reports the synthesis of silver nanoparticles (Ag-NPs) by a green method using Hibiscus sabdariffa (H. sabdariffa) leaves extract as reductant and stabilizer. The synthesized Ag-NPs were characterized by ultraviolet-visible (UV-vis) spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). UV-vis spectrum of synthesized Ag-NPs showed a peak at 378 nm. TEM analysis revealed that the particles were spherical and irregular in shape and has average size around 56.52 nm. This structure and size of particles were confirmed by AFM analysis. The UV-vis and FTIR spectrum provides evidence of the presence of caffeic acid component as a representative biomolecule in stabilising the nanoparticles based on previous studies. Hence, this study advocates that H. sabdariffa have potential for synthesizing nanoparticles.

Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution

2018 ◽  
Vol 282 ◽  
pp. 284-287
Author(s):  
Harold Philipsen ◽  
Sander Teck ◽  
Nils Mouwen ◽  
Wouter Monnens ◽  
Quoc Toan Le
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Chemical Etching ◽  
Rutherford Backscattering ◽  
Force Microscopy ◽  
Acidic Solutions ◽  
Atomic Force ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Low K

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.

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