Improvement of Power and Performance in NAND and D-Latch Gates Using CNFET Technology
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In this paper, low power and high speed D-latch and nand gates (as sample of combinational and sequential circuits) are designed based on cnfet and cmos technology. The performance of D-latch and nand is compared in two technologies of 65nm and 90nm in cmos and cnfet technology. The circuit designs are simulated using hspice. Finally, the power consumption and delay and pdp as well as rise and fall time are compared in various voltages and frequencies. The results show that cnfetD-latch and nand gates have better delay and power consumption in comparison to cmos technology.
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2002 ◽
Vol 11
(01)
◽
pp. 51-55
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2013 ◽
pp. 78-82
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2020 ◽
Vol 9
(12)
◽
pp. 323-328
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