Anisotropic Elastic Field of 3D Prismatic Dislocation Loops in Bounded and Voided Single Crystal Films

2016 ◽  
Vol 725 ◽  
pp. 195-201
Author(s):  
Jia Pei Guo ◽  
Ying Ying Cai ◽  
Yi Ping Chen

Dislocations in a finite medium bring about image stresses. These image stresses play important roles in the dislocation behavior in finite sized systems such as thin films. Since the ratio of surface to volume is higher for thin films than for bulk materials, dislocation behaviors in thin films are greatly different from those in a corresponding infinite medium, which make it necessary to take into account the effects of free surfaces on the evolution of dislocations in thin films. In the investigations[4, 5], image stresses in an elastic cylinder and thin films are calculated by employing a Fourier transform (FFT) approach and isotropically elastic fields due to dislocations are adopted in their formulation. However, most crystals are anisotropic, and the anisotropic ratio changes with environment physical parameters, such as the temperature, moisture, electron field, magnetic field. A theorem based on anisotropic Stroh’s formula for calculating the image stress of infinite straight dislocations in anisotropic bicrystals has been developed by Barnett and Lothe[6]. Wu et al.[3] recently also make use of the FFT technique to investigate the general dislocation image stresses of cubic thin films, thus extending the formalism by Weinberger et al.[4,5] from isotropic to anisotropic thin films. It is clear that for the assumed in-plane elastic fields to be periodically defined within an unbounded region is an essential and indispensable prerequisite for the above FFT-based approach to be effectively implemented, thus ruling out the possibility of its being employed to analyse image stresses in bounded and/or voided thin cubic films. Our motivation here is then to make an further extension by first calculating the anisotropic elastic fields of dislocation loops in an unbounded thin film with cavities and then invoking FEM and the principle of superposition to seek the image stress solution.

2016 ◽  
Vol 725 ◽  
pp. 189-194
Author(s):  
Ying Ying Cai ◽  
Jia Pei Guo ◽  
Yi Ping Chen

At the microscopic scale fast neutron irradiation brings about a high density of small point defect clusters in the form of dislocation loops and voids. And such radiation damage is of primary importance for materials used in nuclear energy production. In the present investigation emphasis is placed on the understanding of the mechanisms involved in the evolution of prismatic dislocation loops by glide in the presence of external free surfaces and those of the voids and in the interaction between dislocation loops and voids within irradiated thin films, so as to simulate in situ Transmission Electron Microscopy (TEM) images of dislocations, which is an indispensable tool for extracting information on radiation damage. By employing 3D dislocation dynamics based on isotropic elacticity and principle of superposition, the calculation results show that the image force is determined by the distance of the dislocation loop from the external and void surfaces and scales with the film thickness; the dislocation glide force is determined by the image stress as well as the loop–loop interaction stress which is in turn governed by the loop spacing. It is also shown that the presence of voids in the thin films has a strong influence on the behaviours of prismatic dislocations.


2016 ◽  
Vol 22 (5) ◽  
pp. 1190-1204 ◽  
Author(s):  
Wenwang Wu ◽  
Cunjing Lv ◽  
Shucai Xu ◽  
Jinhuan Zhang

Based on the two-dimensional discrete Fast Fourier Transformation (FFT) method, a semi-analytical solution is developed for calculating the elastic fields of dislocation loops within isotropic bimaterials, where the imperfect interface can be described as two types of models: (a) dislocation-like and (b) force-like. Calculation examples of dislocation loops within Al–Cu bimaterials are performed to verify the reliability of the semi-analytical approach. Effects of constant matrix for the dislocation-like and force-like models on the interface elastic fields are studied, and it is shown that the interface elastic field is remarkably influenced by the interface conditions. Comparisons between perfect-bonding, dislocation-like and force-like imperfect interface models are performed to study the effects of interface conditions on the in-plane and out-of-plane elastic fields across the bimaterial interface plane.


Metals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 2000
Author(s):  
Marcelo Roldán ◽  
Fernando José Sánchez ◽  
Pilar Fernández ◽  
Christophe J. Ortiz ◽  
Adrián Gómez-Herrero ◽  
...  

In the present investigation, high-energy self-ion irradiation experiments (20 MeV Fe+4) were performed on two types of pure Fe samples to evaluate the formation of dislocation loops as a function of material volume. The choice of model material, namely EFDA pure Fe, was made to emulate experiments simulated with computational models that study defect evolution. The experimental conditions were an ion fluence of 4.25 and 8.5 × 1015 ions/cm2 and an irradiation temperature of 350 and 450 °C, respectively. First, the ions pass through the samples, which are thin films of less than 100 nm. With this procedure, the formation of the accumulated damage zone, which is the peak where the ions stop, and the injection of interstitials are prevented. As a result, the effect of two free surfaces on defect formation can be studied. In the second type of experiments, the same irradiations were performed on bulk samples to compare the creation of defects in the first 100 nm depth with the microstructure found in the whole thickness of the thin films. Apparent differences were found between the thin foil irradiation and the first 100 nm in bulk specimens in terms of dislocation loops, even with a similar primary knock-on atom (PKA) spectrum. In thin films, the most loops identified in all four experimental conditions were b ±a0<100>{200} type with sizes of hundreds of nm depending on the experimental conditions, similarly to bulk samples where practically no defects were detected. These important results would help validate computational simulations about the evolution of defects in alpha iron thin films irradiated with energetic ions at large doses, which would predict the dislocation nucleation and growth.


Author(s):  
E.L. Veera Prabakaran ◽  
K Senthil Vadivu ◽  
B Mouli Prasanth

Abstract Thin film sensors are used to monitor environmental conditions by measuring the physical parameters. By using thin film technology, the sensors are capable of conducting precise measurements. Moreover, the measurements are stable and dependable. Furthermore, inexpensive sensor devices can be produced. In this paper, thin film technology for the design and fabrication of sensors that are used in various applications is reviewed. Further, the applications of thin film sensors in the fields of biomedical, energy harvesting, optical, and corrosion applications are also presented. From the review, the future research needs and future perspectives are identified and discussed.


2018 ◽  
Vol 924 ◽  
pp. 147-150
Author(s):  
Jörg Pezoldt ◽  
Andrei Alexandrovich Kalnin

A model based on the generation and recombination of defect was developed to describe the stability of stacking faults and basal plane dislocation loops in crystals with layered polytype structures. The stability of the defects configuration was analysed for stacking faults surrounded by Shockley and Frank partial dislocation as well as Shockley dislocation dipoles with long range elastic fields. This approach allows the qualitative prediction of defect subsystems in polytype structure in external fields.


1986 ◽  
Vol 53 (1) ◽  
pp. 103-107 ◽  
Author(s):  
E. Tsuchida ◽  
T. Mura ◽  
J. Dundurs

The paper analyzes the elastic fields caused by an elliptic inclusion which undergoes a uniform expansion. The interface between the inclusion and the matrix cannot sustain shear tractions and is free to slip. Papkovich–Neuber displacement potentials are used to solve the problem. In contrast to the perfectly bonded interface, the solution cannot be expressed in closed form and involves infinite series. The results are illustrated by numerical examples.


2017 ◽  
Vol 123 (5) ◽  
Author(s):  
Ahmed Kotbi ◽  
Bouchaib Hartiti ◽  
Salah Fadili ◽  
Abderraouf Ridah ◽  
Philippe Thevenin

2005 ◽  
Vol 875 ◽  
Author(s):  
E.H. Tan ◽  
L.Z. Sun

AbstractBased on the physical background, a new dislocation dynamics model fully incorporating the interaction among differential dislocation segments is developed to simulate 3D dislocation motion in crystals. As the numerical simulation results demonstrate, this new model completely solves the long-standing problem that simulation results are heavily dependent on dislocation-segment lengths in the classical dislocation dynamics theory. The proposed model is applied to simulate the effect of dislocations on the mechanical performance of thin films. The interactions among the dislocation loops, free surface and interfaces are rigorously computed by a decomposition method. This framework can be used to simulate how a surface loop evolves into two threading dislocations and to determine the critical thickness of thin films. Furthermore, the relationship between the film thickness and yield strength is established and compared with the conventional Hall-Petch relation.


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