Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
1998 ◽
Vol 80
(1-4)
◽
pp. 235-239
◽
Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)
2006 ◽
Vol 527-529
◽
pp. 799-802
2009 ◽
Vol 236
(2)
◽
pp. 123-127
◽
1982 ◽
Vol 40
◽
pp. 460-461
1988 ◽
Vol 46
◽
pp. 908-909
1992 ◽
Vol 50
(2)
◽
pp. 1352-1353
1985 ◽
Vol 43
◽
pp. 300-301
1992 ◽
Vol 50
(2)
◽
pp. 1652-1653
1985 ◽
Vol 43
◽
pp. 288-289
Keyword(s):
1985 ◽
Vol 43
◽
pp. 282-285
1990 ◽
Vol 48
(4)
◽
pp. 576-577