Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control

2012 ◽  
Vol 717-720 ◽  
pp. 1005-1008 ◽  
Author(s):  
Shigeharu Yamagami ◽  
Tetsuya Hayashi ◽  
Masakatsu Hoshi
Keyword(s):  
Numerical Simulation ◽  
Barrier Height ◽  
Energy Barrier ◽  
Polycrystalline Silicon ◽  
Implantation Dose ◽  
Heterojunction Diode ◽  
Reverse Voltage ◽  
Height Control ◽  
Boron Doped ◽  
Wide Range

We experimentally investigated a method of controlling the energy barrier height (ΦB) of polycrystalline silicon (poly-Si)/4H-SiC heterojunction diodes (HJDs) and conducted a numerical simulation of a novel low Von and low reverse recovery current diode using ΦB control. The ΦB of the HJD with arsenic-doped n+-poly-Si was 0.79 eV and that of the HJD with boron-doped p+-poly-Si was 1.59 eV. The ΦB can be controlled over a wide range by varying the dopant and ion implantation dose of poly-Si. A novel merged HJD (M-HJD) with two different ΦB values obtained by using ΦB control is also presented. The numerical simulation results show that the M-HJD reduces Von without increasing reverse leakage current at high reverse voltage.

Novel Poly-Si/GaN Vertical Heterojunction Diode

2015 ◽  
Vol 821-823 ◽  
pp. 1015-1018
Author(s):  
Kenta Emori ◽  
Toshiharu Marui ◽  
Yuji Saito ◽  
Wei Ni ◽  
Yasushi Nakajima ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Barrier Height ◽  
Epitaxial Layer ◽  
Ideality Factor ◽  
Polycrystalline Silicon ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Heterojunction Diode ◽  
Bulk Gan ◽  
P Type

We previously reported a unipolar mode p+-polycrystalline silicon (poly-Si)/4H-SiC heterojunction diode (SiC-HJD) [1-3]. In this work, we demonstrate a poly-Si/GaN vertical unipolar heterojunction diode (GaN-HJD) based on numerical simulation and experimental results. The GaN-HJD is expected to control the electrical characteristics of both Schottky action with a p-type poly-Si and ohmic action with an n-type poly-Si. We investigated the detailed physics of the GaN-HJD between p+Si and n+Si by numerical simulation. The GaN-HJD was also fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer on bulk GaN substrates. The measured barrier height of the GaN-HJD was 0.79 eV and the ideality factor was 1.10.

Software system for numerical simulation of broadband laser gas analysis of the atmosphere

2018 ◽  
pp. 66-73 ◽  
Author(s):  
S. A. Sadovnikov
Keyword(s):  
Numerical Simulation ◽  
Laser Radiation ◽  
Gas Analysis ◽  
Modular System ◽  
Software System ◽  
Transmission Spectra ◽  
Molecular Absorption ◽  
Molecular Scattering ◽  
Atmospheric Transmission ◽  
Wide Range

Introduction: Successful monitoring of environmental parameters requires the development of flexible software complexes with evolvable calculation functionality. Purpose: Developing a modular system for numerical simulation of atmospheric laser gas analysis. Results: Based on differential absorption method, a software system has been developed which provides the calculation of molecular absorption cross-sections, molecular absorption coefficients, atmospheric transmission spectra, and lidar signals. Absorption line contours are calculated using the Voigt profile. The prior information sources are HITRAN spectroscopic databases and statistical models of the distribution of temperature, pressure and gas components in the atmosphere. For modeling lidar signals, software blocks of calculating the molecular scattering coefficient and aerosol absorption/scattering coefficients were developed. For testing the applicability of various laser sources in the problems of environmental monitoring of the atmosphere, a concentration reconstruction error calculation block was developed for the atmospheric gas components, ignoring the interfering absorption of laser radiation by foreign gases. To verify the correct functioning of the software, a program block was developed for comparing the results of the modeling of atmospheric absorption and transmission spectra by using the standard SPECTRA information system. The discrepancy between the calculation of the atmospheric transmission spectra obtained using the developed system as compared to the SPECTRA results is less than 1%. Thus, a set of the presented program blocks allows you to carry out complex modeling of remote atmospheric gas analysis. Practical relevance: The software complex allows you to rapidly assess the possibilities of using a wide range of laser radiation sources for the problems of remote gas analysis.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM

2021 ◽  
Vol 237 ◽  
pp. 111498
Author(s):  
Tae-Hyeon Kim ◽  
Sungjun Kim ◽  
Byung-Gook Park
Keyword(s):  
Barrier Height ◽  
Energy Barrier

A Parallel HOFD Scheme for Direct Numerical Simulation of Turbulent Magnetically Driven Flows

2001 ◽  
Author(s):  
X. Ai ◽  
B. Q. Li
Keyword(s):  
Numerical Simulation ◽  
Finite Difference ◽  
Direct Numerical Simulation ◽  
Turbulent Flows ◽  
Parallel Machines ◽  
Higher Order ◽  
Electrically Conducting ◽  
Wide Range ◽  
Order Scheme ◽  
Higher Order Scheme

Abstract Turbulent magnetically flows occur in a wide range of material processing systems involving electrically conducting melts. This paper presents a parallel higher order scheme for the direct numerical simulation of turbulent magnetically driven flows in induction channels. The numerical method is based on the higher order finite difference algorithm, which enjoys the spectral accuracy while minimizing the computational intensity. This, coupled with the parallel computing strategy, provides a very useful means to simulate turbulent flows. The higher order finite difference formulation of magnetically driven flow problems is described in this paper. The details of the parallel algorithm and its implementation for the simulations on parallel machines are discussed. The accuracy and numerical performance of the higher order finite difference scheme are assessed in comparison with the spectral method. The examples of turbulent magnetically driven flows in induction channels and pressure gradient driven flows in regular channels are given, and the computed results are compared with experimental measurements wherever possible.

Influence of Nitrogen Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure

2013 ◽  
Vol 740-742 ◽  
pp. 733-736 ◽  
Author(s):  
Krystian Król ◽  
Mariusz Sochacki ◽  
Marcin Turek ◽  
Jerzy Żuk ◽  
Henryk M. Przewlocki ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Surface State ◽  
Material Properties ◽  
Implantation Dose ◽  
Nitrogen Implantation ◽  
Mos Structure ◽  
Implantation Damage ◽  
Wide Range ◽  
Implantation Dosage

In this article, an influence of nitrogen implantation dosage on SiC MOS structure is analyzed using wide range of nitrogen implantation dose (between ~1013 – 1016). Authors analyzed electrical and material properties of investigated samples using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that surface state trap density is directly connected to implantation damage and thus implantation conditions. Using research results a trap origin at given energy can be concluded.

Resistivity of boron‐doped polycrystalline silicon

1988 ◽  
Vol 52 (15) ◽  
pp. 1222-1224 ◽  
Author(s):  
M. Y. Ghannam ◽  
R. W. Dutton
Keyword(s):  
Polycrystalline Silicon ◽  
Boron Doped

scholarly journals Controlling Condensation of Water Using Hybrid Hydrophobic-Hydrophilic Surfaces

2010 ◽  
Author(s):  
Kripa K. Varanasi ◽  
Tao Deng
Keyword(s):  
Nucleation Rate ◽  
Heterogeneous Nucleation ◽  
Energy Barrier ◽  
Superhydrophobic Surfaces ◽  
Industrial Processes ◽  
Spatial Control ◽  
Hydrophilic Surfaces ◽  
Wide Range ◽  
First Time ◽  
Control Water

Heterogeneous nucleation of water plays an important role in wide range of natural and industrial processes. Though heterogeneous nucleation of water is ubiquitous and everyday experience, spatial control of this important phenomenon is extremely difficult. Here we show, for the first time, that spatial control in the heterogeneous nucleation of water can be achieved by manipulating the local nucleation energy barrier and nucleation rate via the modification of the local intrinsic wettability of a surface by patterning hybrid hydrophobic-hydrophilic regions on a surface. Such ability to control water nucleation could address the condensation-related limitations of superhydrophobic surfaces, and has implications for efficiency enhancements in energy and desalination systems.

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