4H-SiC PIN Diode as High Temperature Multifunction Sensor

2017 ◽  
Vol 897 ◽  
pp. 630-633 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling

An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 °C is presented. The two sensing functions can be simply converted from one to the other by switching the bias voltage on the diode. The optical responsivity of the diode at 365 nm is 31.8 mA/W at 550 °C. The temperature sensitivity of the diode is 2.7 mV/°C at the forward current of 1 μA.

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.


2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.


2012 ◽  
Vol 9 (1) ◽  
pp. 169-171
Author(s):  
Ram Oruganti

When a material is subjected to temperature and stress, it deforms slowly resulting in permanent shape change. If the same amount of stress were applied at room temperature, the material would not budge. This deformation at high temperature under low stresses is called creep. This phenomenon is important for OEM’S like GE etc. since turbine components are exposed to low stress and high temperature and the resulting shape change is not a desirable consequence. Apart from the change in shape, the components can eventually rupture leading to catastrophic consequences. So it is imperative that the nature of this phenomenon is understood well. Some of the questions to be answered are 1) What makes one material more resistant to creep that the other 2) How can a material’s creep resistance be improved 3) How can the current creep damage in a component be measured 4) Is it possible to say what fraction of the total life of a component has been consumed by creep.


RSC Advances ◽  
2017 ◽  
Vol 7 (38) ◽  
pp. 23751-23758 ◽  
Author(s):  
Xin Wang ◽  
Xiangping Li ◽  
Lihong Cheng ◽  
Sai Xu ◽  
Jiashi Sun ◽  
...  

Er3+ concentration had significant influences on temperature sensitivity. The sample with a low concentration of Er3+ had high temperature sensitivity.


1957 ◽  
Vol 35 (10) ◽  
pp. 1205-1215 ◽  
Author(s):  
R. D. Heyding ◽  
L. D. Calvert

Alloys of nickel and arsenic containing up to 60% As by weight have been studied by means of room temperature and high temperature Debye-Scherrer diagrams. Three compounds have been identified: Ni5As2, Ni12−xAs8 (maucherite), and NiAs (niccolite). The first of these is homogeneous from Ni5As2 to Ni4.8A2 at room temperature, and to Ni4.6As2 above 250 °C., while the latter is homogeneous from NiAs to Ni0.95As. Contrary to expectations the stability region of the compound Ni12−xAs8 is very narrow, and occurs at Ni11As8 rather than at Ni3As2. Evidence is presented in support of Hansen's contention that this compound has an incongruent melting point. Alloys in the region corresponding to Ni4.6As2 undergo two transitions below 200 °C, one of which is martensitic and produces a metastable phase, while the other is believed to result in the formation of a new compound, as yet unidentified. The diffraction patterns are discussed in some detail.


1983 ◽  
Vol 27 ◽  
Author(s):  
G. Braunstein ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan

ABSTRACTIn previous studies it was found that when highly oriented pyrolytic graphite (HOPG) is implanted at room temperature, the damage caused by the implantation could be completely annealed by heating the sample to temperatures higher than ∼ 2500°C. However at these high temperatures, the implanted species was found to diffuse out of the sample, as evidenced by the disappearance of the impurity peak in the Rutherford backscattering (RBS) spectrum. If, on the other hand, the HOPG crystal was held at a high temperature (≥ 600°C) during the implantation, partial annealing could be observed. The present work further shows that it is possible to anneal the radiation damage and simultaneously to retain the implants in the graphite lattice by means of high temperature implantation (Ti ≥ 450°C) followed by annealing at 2300°C.


2020 ◽  
Vol 50 (4) ◽  
Author(s):  
_ Yiyun Yao ◽  
Alain J. Corso ◽  
Marco Bazzan ◽  
Enrico Tessarolo ◽  
Zhanshan Wang ◽  
...  

H2 sensing performance of novel Pd–Pt alloy films has been compared with those obtained by using Pd films and H2-reducted PdO films. Two different detecting systems were used to measure the hydrogenation and de-hydrogenation phases with a H2 concentration of both 5% v/v nitrogen and 1% v/v nitrogen at room temperature. The sensitivity loss observed for the Pd–Pt alloy and H2-reducted PdO samples with respect to pure Pd samples can be explained in terms of the reduction in the lattice constant and interstitial volume due to the Pt addition, which determine a decrement of hydrogen atoms penetrating in the films. On the other hand, results show an improvement in time -response for Pd–Pt alloy and H2-reducted PdO films with respect to pure Pd ones, presumably due to the increase of its permeability to H2. Moreover, the sensing measurements repeated after 60 days show that the Pd–Pt alloy films, unlike the Pd-based ones, fully preserve their performances, demonstrating the advantage of the Pt inclusion for stability purposes when the samples are stored upon humidity.


2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000236-000243
Author(s):  
Bharat B. Pant ◽  
Lucky Withanawasam ◽  
Mike Bohlinger ◽  
Mark Larson ◽  
Bruce W. Ohme

Magnetic field sensors are employed in down-hole oil, gas, and geothermal well-drilling applications for azimuth sensing, orientation/rotation sensing, and magnetic anomaly detection. Key requirements of these applications include high measurement accuracy in the near-DC frequency regime, high-operating temperatures, high mechanical shock and vibration, and severe size constraints. Silicon manufacturing processes enable the development of rugged components with small size compatible with assembly processes used for adjacent electronics in hermetically sealed hybrid and/or ceramic packages. Silicon-based magnetic sensors include Anistotropic Magnetoresistive (AMR), Giant Magnetoresistive (GMR) and Tunnelling Magnetoresistive (TMR) sensors. Commercially available GMR and TMR sensors generally cannot be operated much above 150°C. While GMR and TMR have enabled great areal density growth for magnetic recording industry over the past two decades, AMR sensors provide high accuracy measurements in the near-DC regime above 150°C. This is in part due to simplicity of their construction, but also due to their low noise characteristics at low frequencies compared to GMR and TMR. This paper will describe the extension of Honeywell's low noise AMR sensors into high temperature regime up to 225°C. Sensors being reported have room temperature bridge resistance of ~700 Ω, open loop sensitivity of ~2.5 mV/V-Gauss, with a temperature coefficient of sensitivity of −2500 ppm/°C. The low-frequency minimum detectable field monotonically increases with increasing temperature. At room temperature it is ~2.2 μG/√Hz@1 Hz and reaches a value of ~26μG/√Hz@1 Hz at 225°C. Signal and noise density both increase with increasing sensor bias voltage such that low-frequency signal-to-noise ratio does not vary in the bias voltage range of 2.5 V to 10V. These sensors have also been configured in a closed loop format using low noise electronics. Measurements of closed loop transfer function in the range of ±0.8 Gauss were made. The sensor was placed in a thermal chamber while the feedback electronics were placed outside at room temperature. The linearity of the transfer function is quite excellent; deviation from linearity increases monotonically with increasing temperature reaching < 0.002% of full scale or 29 μGauss at 225°C. Closed loop operation of a typical sensor shows 1-σ measurement variability of 21 μGauss at 220°C. By a combination of averaging and closed loop operation an input step from 0 to 75 μGauss is replicated at the output to within 0.1 μG at 225°C.


2019 ◽  
Vol 21 (31) ◽  
pp. 17047-17053 ◽  
Author(s):  
Zhanwen Zhang ◽  
Xinfang Li ◽  
Changjian Wang ◽  
Xvsheng Qiao

Tetravalent Cr4+ is stabilized in the residual silicate glass phase to get high temperature sensitivity and high temperature resolution.


Sign in / Sign up

Export Citation Format

Share Document