scholarly journals A 0.1-2 GHZ LOW POWER FOLDED RF FRONT-END WITH MERGED LNA AND MIXER FOR SOFTWARE-DEFINED RADIO APPLICATIONS

2013 ◽  
pp. 289-292
Author(s):  
MANJULA. K ◽  
PRATHIBHA. S. K
Keyword(s):  
Low Power ◽  
Software Defined Radio ◽  
Frequency Synthesizer ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Power Performance ◽  
Front End ◽  
Rf Front End ◽  
Quadrature Signals

In this paper, A Software-Defined Radio (SDR) RF front-end is presented that contains merged LNA and mixers, VGAs, and frequency synthesizer, supporting various wireless communication standards in 0.1-2 GHz while guaranteeing a power/performance trade-off at any time. The proposed low power RF front-end uses the folded and current reuse techniques. for 0.18 um RF CMOS technology with 1.8V supply voltage. In the receive path the proposed design achieves a Noise Figure of 3.8 dB at 160 MHz and 5.5 dB at 2GHz. The Output-referred 3rd-order Intercept Point (OIP3) is high up to 21.3 dBm at 800 MHz. The voltage gain of the front- end is between 16-44 dB. The phase mismatch of LO quadrature signals is lower than 3deg.It consumes 13.8 mW at the 1.7V supply.

scholarly journals A Low-Voltage Multi-Band ZigBee Transceiver

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1474
Author(s):  
Zhiqun Li ◽  
Yan Yao ◽  
Zengqi Wang ◽  
Guoxiao Cheng ◽  
Lei Luo
Keyword(s):  
Frequency Synthesizer ◽  
Low Voltage ◽  
Supply Voltage ◽  
Maximum Output Power ◽  
Cmos Technology ◽  
Maximum Output ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Front End ◽  
Band Pass

This paper presents a low-voltage ZigBee transceiver covering a unique frequency band of 780/868/915/2400 MHz in 180 nm CMOS technology. The design consists of a receiver with a wideband variable-gain front end and a complex band-pass filter (CBPF) based on poles construction, a transmitter employing the two-point direct-modulation structure, a Ʃ-Δ fractional-N frequency synthesizer with two VCOs and some auxiliary circuits. The measured results show that under 1 V supply voltage, the receiver reaches −93.8 dBm and −102 dBm sensitivity for 2.4 GHz and sub-GHz band, respectively, and dissipates only 1.42 mW power. The frequency synthesizer achieves −106.8 dBc/Hz and −116.7 dBc/Hz phase noise at 1 MHz frequency offset along with 4.2 mW and 3.5 mW power consumption for 2.4 GHz and sub-GHz band, respectively. The transmitter features 2.67 dBm and 12.65 dBm maximum output power at the expense of 21.2 mW and 69.5 mW power for 2.4 GHz and sub-GHz band, respectively.

scholarly journals Design of a very low-power, low-cost 60 GHz receiver front-end implemented in 65 nm CMOS technology

2011 ◽  
Vol 3 (2) ◽  
pp. 131-138 ◽  
Author(s):  
Michael Kraemer ◽  
Daniela Dragomirescu ◽  
Robert Plana
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Noise Figure ◽  
Low Cost ◽  
Cmos Technology ◽  
Low Noise ◽  
Oxide Semiconductor ◽  
Voltage Controlled Oscillator ◽  
60 Ghz ◽  
Front End

The research on the design of receiver front-ends for very high data-rate communication in the 60 GHz band in nanoscale Complementary Metal Oxide Semiconductor (CMOS) technologies is going on for some time now. Although a multitude of 60 GHz front-ends have been published in recent years, they are not consequently optimized for low power consumption. Thus, these front-ends dissipate too much power for battery-powered applications like handheld devices, mobile phones, and wireless sensor networks. This article describes the design of a direct conversion receiver front-end that addresses the issue of power consumption, while at the same time permitting low cost (due to area minimization by the use of spiral inductors). It is implemented in a 65 nm CMOS technology. The realized front-end achieves a record power consumption of only 43 mW including low-noise amplifier (LNA), mixer, a voltage controlled oscillator (VCO), a local oscillator (LO) buffer, and a baseband buffer (without this latter buffer the power consumption is even lower, only 29 mW). Its pad-limited size is 0.55 × 1 mm2. At the same time, the front-end achieves state-of-the-art performance with respect to its other properties: Its maximum measured power conversion gain is 30 dB, the RF and IF bandwidths are 56.5–61.5 and 0–1.5 GHz, respectively, its measured minimum noise figure is 9.2 dB, and its measured IP−1 dB is −36 dBm.

scholarly journals Energy Efficiency Analysis of MIMO Wideband RF Front-End Receivers

Sensors ◽  
2020 ◽  
Vol 20 (24) ◽  
pp. 7070
Author(s):  
Eduil Nascimento Junior ◽  
Guilherme Theis ◽  
Edson Leonardo dos Santos ◽  
André Augusto Mariano ◽  
Glauber Brante ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Power Consumption ◽  
Low Power ◽  
Noise Figure ◽  
Low Noise ◽  
Low Power Consumption ◽  
Communication Link ◽  
Active Antennas ◽  
Front End ◽  
Rf Front End

Energy-efficiency is crucial for modern radio-frequency (RF) receivers dedicated to Internet of Things applications. Energy-efficiency enhancements could be achieved by lowering the power consumption of integrated circuits, using antenna diversity or even with an association of both strategies. This paper compares two wideband RF front-end architectures, based on conventional low-noise amplifiers (LNA) and low-noise transconductance amplifiers (LNTA) with N-path filters, operating with three transmission schemes: single antenna, antenna selection and singular value decomposition beamforming. Our results show that the energy-efficiency behavior varies depending on the required communication link conditions, distance between nodes and metrics from the front-end receivers. For short-range scenarios, LNA presents the best performance in terms of energy-efficiency mainly due to its very low power consumption. With the increasing of the communication distance, the very low noise figure provided by N-path LNTA-based architectures outperforms the power consumption issue, yielding higher energy-efficiency for all transmission schemes. In addition, the selected front-end architecture depends on the number of active antennas at the receiver. Hence, we can observe that low noise figure is more important with a few active antennas at the receiver, while low power consumption becomes more important when the number of active RF chains at the receiver increases.

A Low-Power, High-Gain, and Low-Noise 802.11a Down-Conversion Mixer in 0.35-μm SiGe Bi-CMOS Technology

2017 ◽  
Vol 26 (09) ◽  
pp. 1750134 ◽  
Author(s):  
Jun-Da Chen ◽  
Song-Hao Wang
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Cmos Process ◽  
Conversion Gain ◽  
Dc Power ◽  
Down Conversion

The paper presents a novel 5.15[Formula: see text]GHz–5.825[Formula: see text]GHz SiGe Bi-CMOS down-conversion mixer for WLAN 802.11a receiver. The architecture used is based on Gilbert cell mixer, the combination of MOS transistors and HBT BJT transistor device characteristics. The hetero-junction bipolar transistor (HBT) topology is adopted at the transconductance stage to improve power gain and reduce noise factor, and the LO series-parallel CMOS switch topology will be applied to reduce supply voltage and dc power at the switching stage. This mixer is implemented in TSMC 0.35-[Formula: see text]m SiGe Bi-CMOS process, and the chip size including the test pads is 1.175*0.843[Formula: see text]mm2. The main advantages for the proposed mixer are high conversion gain, a moderate linearity, low noise figure, and low power. The post-simulation results achieved are as follows: 14[Formula: see text]dB power conversion gain, [Formula: see text]6[Formula: see text]dBm input third-order intercept point (IIP3), 6.85[Formula: see text]dB double side band (DSB) noise figure. The total mixer current is about 1.54[Formula: see text]mA from 1.4[Formula: see text]V supply voltage including output buffer. The total dc power consumption is 2.15[Formula: see text]mW.

The Design of Ultra Low Power RF CMOS LNA in Nanometer Technology

2016 ◽  
pp. 229-251
Author(s):  
Kavyashree P. ◽  
Siva S. Yellampalli
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Ultra Low Power ◽  
Low Voltage Operation ◽  
Common Gate ◽  
Low Power Cmos ◽  
Power Application

In this chapter, an ultra low power CMOS Common Gate LNA (CGLNA) with a Capacitive Cross-Coupled (CCC) gm boosting scheme is designed and analysed. The technique described has been employed in literature to reduce the Noise Figure (NF) and power dissipation. In this work we have extended the concept for low voltage operation along with improving NF and also for significant reduction in current consumption. A gm boosted CCC-CGLNA is implemented in 90nm CMOS technology. It has a gain of 9.9dB and a noise figure of 0.87dB at 2.4GHz ISM band and consumes less power (0.5mw) from 0.6V supply voltage. The designed gm boosted CCC-CGLNA is suitable for low power application in CMOS technologies.

scholarly journals A Novel High Linearity and Low Power Folded CMOS LNA for UWB Receivers

2017 ◽  
Vol 27 (03) ◽  
pp. 1850047
Author(s):  
Xin Zhang ◽  
Chunhua Wang ◽  
Yichuang Sun ◽  
Haijun Peng
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Low Noise ◽  
Ultra Wideband ◽  
Oxide Semiconductor ◽  
High Linearity ◽  
Low Supply Voltage

This paper presents a high linearity and low power Low-Noise Amplifier (LNA) for Ultra-Wideband (UWB) receivers based on CHRT 0.18[Formula: see text][Formula: see text]m Complementary Metal-Oxide-Semiconductor (CMOS) technology. In this work, the folded topology is adopted in order to reduce the supply voltage and power consumption. Moreover, a band-pass LC filter is embedded in the folded-cascode circuit to extend bandwidth. The transconductance nonlinearity has a great impact on the whole LNA linearity performance under a low supply voltage. A post-distortion (PD) technique employing an auxiliary transistor is applied in the transconductance stage to improve the linearity. The post-layout simulation results indicate that the proposed LNA achieves a maximum power gain of 12.8[Formula: see text]dB. The input and output reflection coefficients both are lower than [Formula: see text][Formula: see text]dB over 2.5–11.5[Formula: see text]GHz. The input third-order intercept point (IIP3) is 5.6[Formula: see text]dBm at 8[Formula: see text]GHz and the noise figure (NF) is lower than 4.0[Formula: see text]dB. The LNA consumes 5.4[Formula: see text]mW power under a 1[Formula: see text]V supply voltage.

scholarly journals A Single-Stage Low-Power Double-Balanced Mixer Merged with LNA and VCO

2017 ◽  
Vol 7 (1) ◽  
pp. 152 ◽  
Author(s):  
Nam-Jin Oh
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Intermediate Frequency ◽  
Cmos Technology ◽  
Single Stage ◽  
Voltage Controlled Oscillator ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Balanced Mixer

This paper proposes three types of single stage low-power RF front-end, called double-balanced LMVs, by merging LNA, mixer, and voltage-controlled oscillator (VCO) exploiting a series <em>LC </em>(SLC) network. The low intermediate frequency (IF) or baseband signal can be directly sensed at the drain nodes of the VCO switching transistors by adding a simple resistor-capacitor (<em>RC</em>) low-pass filter (LPF). By adopting a double-balanced mixer topology, the strong leakage of the local oscillator (LO) at the IF output is effectively suppressed. Using a 65 nm CMOS technology, the proposed double-balanced LMVs (DB-LMVs) are designed. Oscillating at around 2.4 GHz ISM band, the phase noise of the proposed three DB-LMVs is −111 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain is larger than 36 dB and the double-side band (DSB) noise figure (NF) is less than 7.7 dB. The DB-LMVs consume only 0.2 mW <em>dc</em> power from 1-V supply voltage.

scholarly journals System considerations and RF front-end design for integration of satellite navigation and mobile standards

2009 ◽  
Vol 7 ◽  
pp. 151-154
Author(s):  
A. Miskiewicz ◽  
A. Holm ◽  
R. Weigel
Keyword(s):  
Noise Figure ◽  
Feasibility Studies ◽  
Cmos Technology ◽  
Point Of View ◽  
Performance Criteria ◽  
Cmos Process ◽  
Technology System ◽  
Process Characteristics ◽  
Front End ◽  
Rf Front End

Abstract. The paper presents the challenges involved in a system design of a robust reconfigurable RF front-end for navigation and mobile standards. Receiver architecture is chosen from the point of view of inter-system interference and 130nm CMOS process characteristics. System concept covers the implementation of GPS, Galileo, UMTS, GSM and CDMA2000 using a Zero-IF architecture with reconfigurable analog and digital path. Feasibility studies of the system cover analysis of the wireless regulations and performance criteria, such as overall gain, noise figure (NF), and 1dB compression point (P1dB) of the RF chain, phase noise requirements and VCO tuning range [1]. The presented chip was fabricated in 130 nm CMOS technology. System considerations are confirmed with the chip measurements of gain, noise figure, and linearity. Prospects for the future work are presented including technology shrink.

scholarly journals A Low Power Impedance Transparent Receiver with Linearity Enhancement Technique for IoT Applications

2018 ◽  
Vol 2018 ◽  
pp. 1-10
Author(s):  
Sizheng Chen ◽  
Tingting Shi ◽  
Lei Ma ◽  
Cheng Kang ◽  
Na Yan ◽  
...  
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Passive Mixer ◽  
Front End ◽  
Rf Front End ◽  
Input Matching ◽  
Measurement Results ◽  
Active Feedback ◽  
Active Rc Filter ◽  
Superposition Technique

A low power receiver with impedance transparent RF front end is presented. By using the 4-path passive mixer and the active feedback of LNA, the baseband impedance profile is further transferred to receiver input. While a LO-defined input matching is formed by RF front end, the linearity of entire receiver chain is improved. Furthermore, derivative superposition technique is employed to cancel the distortion of the CMOS LNA. A 3rd-order active-RC filter is designed with current-efficient feedforward compensated OTA. And a digital-to-time converter (DTC) assisted fractional-N all-digital phase-locked loop (ADPLL) is codesigned with receiver to meet the IoT requirements. The presented receiver is fabricated in 55 nm CMOS technology with an active area of 2.3 mm2 and power consumption of 20 mW. Measurement results show that the receiver achieves 5.3 dB NF with 78 dB gain from 0.6 to 1 GHz, the RX out-of-band IIP3 is +8 dBm, and in-band IIP3 is −10 dBm, and the ADPLL achieves −94 dBc/Hz in-band PN and −120.5 dBc/Hz at 1 MHz offset.

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