Properties of WO3-xElectrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

2013 ◽  
Vol 52 (11S) ◽  
pp. 11NB09 ◽  
Author(s):  
Min Hong Kim ◽  
Hyung Wook Choi ◽  
Kyung Hwan Kim
Keyword(s):  
Thin Film ◽  
Reactive Sputtering ◽  
Annealing Temperatures ◽  
Post Annealing

scholarly journals Rapid and Scalable Wire-bar Strategy for Coating of TiO2 Thin-films: Effect of Post-Annealing Temperatures on Structures and Catalytic Dye-Degradation

Molecules ◽  
2020 ◽  
Vol 25 (7) ◽  
pp. 1683 ◽  
Author(s):  
P. Divya ◽  
S. Arulkumar ◽  
S. Parthiban ◽  
Anandarup Goswami ◽  
Tansir Ahamad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dye Degradation ◽  
Window Glass ◽  
Visible Range ◽  
Large Area ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Annealing Temperatures ◽  
Post Annealing

Titanium dioxide (TiO2) thin films were rapidly coated on Corning glass substrates from the precursor solution using the wire-bar technique at the room temperature and then post-annealed at 400, 500 and 600 °C for 1 h under atmospheric conditions. The structural, morphological, optical, wettability and photocatalytic properties of the films were studied. X-ray diffraction analysis confirmed the formation of an anatase TiO2 structure irrespective of the post-annealing temperatures. The optical transparency of the films in the visible range was measured to be > 70%. A water contact angle (WCA) of ~0° was observed for TiO2 thin-film, post-annealed at 400 °C and 500 °C. However, WCA of 40.3° was observed for post-annealed at 600 °C. The photocatalytic dye-degradation using post-annealed thin-film was investigated indicating a steady improvement in the dye-degradation percentage (from 24.3 to 29.4%) with the increase of post-annealing temperature. The demonstrated TiO2 thin-films deposited by wire-bar coating technique showed promises for the manufacturing of large-area cost-effective self-cleaning window glass.

scholarly journals Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures

2017 ◽  
Vol 214 (2) ◽  
pp. 1600470 ◽  
Author(s):  
Kham M. Niang ◽  
Junhee Cho ◽  
Aditya Sadhanala ◽  
William I. Milne ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Reactive Sputtering ◽  
High Rate ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide

The influences of post-annealing temperatures on fabrication graphitic carbon nitride, (g-C3N4) thin film

2019 ◽  
Vol 489 ◽  
pp. 92-100 ◽  
Author(s):  
Nurul Aida Mohamed ◽  
Javad Safaei ◽  
Aznan Fazli Ismail ◽  
Muhammad Fareez Amir Mohd Jailani ◽  
Muhammad Najib Khalid ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nitride ◽  
Graphitic Carbon ◽  
Graphitic Carbon Nitride ◽  
Annealing Temperatures ◽  
Post Annealing

Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 superlattice channels

2015 ◽  
Vol 584 ◽  
pp. 336-340 ◽  
Author(s):  
Cheol Hyoun Ahn ◽  
So Hee Kim ◽  
Ye Kyun Kim ◽  
Ho Seong Lee ◽  
Hyung Koun Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Annealing Temperatures ◽  
Post Annealing

Transparency Improvement of SiCO Thin Film for Optical Waveguide with Reactive Sputtering Method

2020 ◽  
Vol 140 (12) ◽  
pp. 369-373
Author(s):  
Hiroyuki Nikkuni ◽  
Chizuru Numata ◽  
Ryoto Yamaji ◽  
Hiroshi Ito ◽  
Yoshio Kawamata
Keyword(s):  
Thin Film ◽  
Optical Waveguide ◽  
Reactive Sputtering

scholarly journals Performance Improvement of ZnSnO Thin-Film Transistors with Low-Temperature Self-Combustion Reaction

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1099
Author(s):  
Ye-Ji Han ◽  
Se Hyeong Lee ◽  
So-Young Bak ◽  
Tae-Hee Han ◽  
Sangwoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Low Cost ◽  
Thermal Analyses ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide ◽  
Thermal Limitation

Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional sol-gel processed zinc tin oxide (ZTO) TFTs have a thermal limitation in that they require high annealing temperatures of more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the thermal limitation of conventional sol-gel processed ZTO TFTs, we demonstrated a ZTO TFT that was fabricated at low annealing temperatures of 350 °C using self-combustion. The optimized device exhibited satisfactory performance, with μsat of 4.72 cm2/V∙s, Vth of −1.28 V, SS of 0.86 V/decade, and ION/OFF of 1.70 × 106 at a low annealing temperature of 350 °C for one hour. To compare a conventional sol-gel processed ZTO TFT with the optimized device, thermogravimetric and differential thermal analyses (TG-DTA) and X-ray photoelectron spectroscopy (XPS) were implemented.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing
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