Performance Comparison of InAs Based DG-MOSFET with Respect to SiO2 and Gate Stack Configuration

Objective:: In this proposed work, the Analog, RF and Linearity performances of a DGMOSFET have been analyzed by considering InAs as a channel material. Methods: For the very first time, gate stack techniques in this device have been incorporated and a comparative analysis is conducted with respect to SiO2 oxide layer. The variations in different patterns of oxide layer and their comparison have been thoroughly investigated to have a better understanding of various performance parameters. A thorough analysis of the key figure-of-merits such as trans-conductance factor, transconductance generation factor (TGF), gate capacitance, cutoff frequency (fT), maximum frequency of oscillation (fmax), GBW and various linearity parameters such as gm2, gm3,VIP2, VIP3, IIP3, has been studied with respect to SiO2 oxide material and gate stack technology. Result:: The simulation results revealed that the performances of the device are sensitive to both the oxide materials and it was also inferred that gate stack technology gave a better performance over SiO2 oxide layer. Conclusion:: These results have significant effects in analog, RF and linearity operations. In this work, computer aided design (TCAD) simulations by 2D ATLAS, Silvaco International have been used.

Workplace Subjective Age Multidimensionality: Generation, Age, Tenure, Experience (GATE)

Although less subjective age focused than other scholarly fields, organizational behavior (OB) faces a familiar challenge: comprehending an aging, increasingly age-diverse workforce, yet finding chronological age alone to be a limited predictor of key work outcomes (e.g., performance). A recent OB framework posits that going beyond chronological age necessitates disentangling distinct age-based constructs: perceived Generation (birth cohort), Age (life stage), Tenure (length of time with organization), and Experience (skill set accumulated over time; GATE). Although this framework originated as a means of enhancing predictions for a rapidly aging workforce, this commentary argues that GATE also provides a framework for understanding bases of subjective age itself, including an important distinction between more subjective elements (generation, life stage) versus more objective elements (tenure, experience). Future research on subjective age might well consider applying GATE elements in order to enhance a multidimensional understanding of subjective age underpinnings.

Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor

The key to full understanding of the degradation mechanism of oxide thin film transistors (Ox-TFTs) by gate bias stress is to investigate dynamical changes of the electron trap site at the channel region while a real-time gate bias is applied to the actual thin film transistor (TFT) structure.

Influences of signal processing methods on photon number resolving capability of multi-pixel photon counter

Influences of signal processing methods on photon number resolving capability of multi-pixel photon counter (MPPC) were studied in this work. Results show that the photon number resolving (PNR) capability of MPPC can be greatly improved by waveform integration of the avalanche pulses of MPPC, relative to the histograms of the output pulse amplitudes. Up to 47 photon-equivalent peaks can be distinguished in the PNR spectrum with pulsed light repetition frequency of 80[Formula: see text]MHz and 5[Formula: see text]ns time gate. The analog to digital converter (ADC) in oscilloscope with more bit resolution may be beneficial for the PNR of MPPC.

A Novel Microfluidic Time Gate for Controlling Flow of Liquids

Microfluidic time gates are applied to control accurate flow time of liquids in the autonomous capillary systems, which are critical structures for point-of-care diagnostic and analytical applications. The time gate employs several abruptly changing geometry of the flow path to change the wettability of micro-channels to meet the requirement of delaying flow. However, obtaining desirable flow of liquids in microfluidics is still a limiting factor in the practical implementation. The work demonstrates a novel 2D serial cross-channel time gate and 3D serial cross-channel time gate. They are fabricated in PDMS-based autonomous capillary system. 2D serial cross-channel time gate is comprised of multiple paralleled channels of changeable width with dimensions from 300-800μm. The number of the channels and the width variation of the cross intersections are crucial factors to influence the flow velocity of liquids. Compared with the 2D serial cross-channel time gate, the 3-D structures can eliminate the problem of entrapping air and improve the flow velocity of liquids in the time gate. The controlling time of the flow in 3D serial cross-channel time gate and 2D serial cross-channel time gate are 9~13s and 5s~51s, respectively.