Stack design of OLEDs with high performance and simplified device structures

2021 ◽  
Author(s):  
Jing Wang ◽  
Huiqing Pang ◽  
Zhihao Cui ◽  
Xiao Chen ◽  
Renjie Zheng ◽  
...  
Keyword(s):  
High Performance ◽  
Device Structures ◽  
Stack Design

38.4: Invited Paper: Stack Design of OLEDs with High Performance and Simplified Device Structures

2021 ◽  
Vol 52 (S2) ◽  
pp. 487-490
Author(s):  
Jing Wang ◽  
Huiqing Pang ◽  
Zhihao Cui ◽  
Xiao Chen ◽  
Renjie Zheng ◽  
...  
Keyword(s):  
High Performance ◽  
Device Structures ◽  
Stack Design

RECENT ADVANCES IN BiCMOS TECHNOLOGY

1990 ◽  
Vol 01 (02) ◽  
pp. 153-167
Author(s):  
TZU-YIN CHIU ◽  
PING K. KO
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Technology Evolution ◽  
Recent Advances ◽  
Bicmos Technology ◽  
Device Structures ◽  
High Performance Systems ◽  
Technology Trend

The merits of high speed bipolar and low power VLSI CMOS are combined in BiCMOS technology. Designers are exploiting additional dimensions of flexibility and are implementing aggressive high performance systems not achievable before. Various approaches to BiCMOS integration, spanning from a single mask addition to sophisticated fully self-aligned device structures, are reviewed in this article. The philosophies behind the technology evolution in the last five years are discussed. We have also ventured to extrapolate future BiCMOS technology trend and applications.

scholarly journals Constructing Donor-Resonance-Donor Molecules for Acceptor-Free Bipolar Organic Semiconductors

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-10
Author(s):  
He Jiang ◽  
Jibiao Jin ◽  
Zijie Wang ◽  
Wuji Wang ◽  
Runfeng Chen ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
High Performance ◽  
Molecular Design ◽  
Stimuli Responsive ◽  
Light Emitting ◽  
Deep Blue ◽  
Device Structures ◽  
Device Applications ◽  
Donor Acceptor ◽  
Organic Optoelectronic

Organic semiconductors with bipolar transporting character are highly attractive as they offer the possibility to achieve high optoelectronic performance in simple device structures. However, the continual efforts in preparing bipolar materials are focusing on donor-acceptor (D-A) architectures by introducing both electron-donating and electron-withdrawing units into one molecule in static molecular design principles. Here, we report a dynamic approach to construct bipolar materials using only electron-donating carbazoles connected by N-P=X resonance linkages in a donor-resonance-donor (D-r-D) structure. By facilitating the stimuli-responsive resonance variation, these D-r-D molecules exhibit extraordinary bipolar properties by positively charging one donor of carbazole in enantiotropic N+=P-X- canonical forms for electron transport without the involvement of any acceptors. With thus realized efficient and balanced charge transport, blue and deep-blue phosphorescent organic light emitting diodes hosted by these D-r-D molecules show high external quantum efficiencies up to 16.2% and 18.3% in vacuum-deposited and spin-coated devices, respectively. These results via the D-r-D molecular design strategy represent an important concept advance in constructing bipolar organic optoelectronic semiconductors dynamically for high-performance device applications.

scholarly journals Recent Reports of Magneto-Mechano-Electric Conversion Composites

Ceramist ◽  
2021 ◽  
Vol 24 (3) ◽  
pp. 248-259
Author(s):  
Geon-Tae Hwang ◽  
Jungho Ryu ◽  
Woon-Ha Yoon
Keyword(s):  
Energy Harvesting ◽  
Material Properties ◽  
High Performance ◽  
Piezoelectric Materials ◽  
Research Progress ◽  
Application System ◽  
Magnetic Sensing ◽  
Research Teams ◽  
Device Structures ◽  
Magnetic And Electric Properties

Magneto-mechano-electric (MME) conversion composites composed of distinctive magnetostrictive and piezoelectric materials derive interfacial coupling of magnetoelectric conversion between magnetic and electric properties, thus enabling energy harvesting and magnetic sensing. To demonstrate high-performance MME composites and their applications, various research teams have studied tailoring device structures, enhancing material properties, and developing MME application system. This article reviews the recent research progress of MME composites for energy harvesting and magnetic sensing.

AlGaN/GaN Structures Grown by HVPE: Growth and Characterization

2003 ◽  
Vol 764 ◽  
Author(s):  
M.A. Mastro ◽  
D.V. Tsvetkov ◽  
A.I. Pechnikov ◽  
V.A. Soukhoveev ◽  
G.H. Gainer ◽  
...  
Keyword(s):  
Mass Production ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
Hydride Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Light Emitting ◽  
Device Structures ◽  
Ultraviolet Light Emitting Diodes ◽  
Growth Technology

AbstractThis letter reports on multi-layer submicron epitaxial device structures grown by hydride vapor phase epitaxy (HVPE). This is the first demonstration of both high electron mobility transistor (HEMT) devices and ultraviolet light emitting diodes (LED) emitting in the wavelength range from 305 to 340 nm based on AlGaN/GaN and AlGaN/AlGaN heterostructures grown by HVPE. Two unique aspects of this technological approach are the growth of Al-containing epitaxial material by HVPE and use of HVPE to form submicron multi-layer epitaxial structures. The high performance of HVPE grown devices presented in this report demonstrates the significant potential that exists for HVPE growth technology for mass production of device epitaxial wafers.

Trichloride-Hydride Vpe: A Hybrid Regrowth Process for III-V Epitaxial Heterostructures

1989 ◽  
Vol 145 ◽  
Author(s):  
M. A. Digiuseppe ◽  
V. D. Mattera ◽  
J. Brown ◽  
L. Marchut ◽  
D. T. Ekholm ◽  
...  
Keyword(s):  
High Performance ◽  
Light Sources ◽  
Very High Frequency ◽  
Performance Requirements ◽  
Transmission Electron ◽  
Device Structures ◽  
Metal Organic ◽  
Epitaxial Heterostructures ◽  
Dark Currents

AbstractInP based alloy epitaxial heterostructures currently are being developed as light sources and detectors for optoelectronic applications. High performance requirements at very high frequency operation have resulted in the need for complex device structures which can require one or more epitaxial steps. As a result, hybrid growth techniques combining LPE with either hydride VPE, trichloride VPE or metal organic CVD previously have been used to grow emitter and photodetector heterostructures. In this paper, a hybrid trichloride-hydride VPE growth technique for complex heterostructures is described. Trichloride VPE which is particularly suited for certain regrowth applications because of its inherent in-situ etching capability has been successfully utilized to regrow low-doped, high purity InP on InP/InGaAs/InGaAsP heterostructures grown by hydride VPE. Transmission electron microscopy has shown that the regrowth interface is free of major defects and dislocations. P-diffused APD mesa devices obtained from these structures were operated with fields at the regrowth interface as high as 3.8 × 105V/cm. Primary dark currents were observed as low as 1.4nA.

New Flip-Chip Interconnect Technology for High Performance and High Reliability Applications

2012 ◽  
Vol 2012 (1) ◽  
pp. 000482-000490
Author(s):  
Eiji Yamaguchi ◽  
Mutsuo Tsuji ◽  
Nozomi Shimoishizaka ◽  
Takahiro Nakano ◽  
Katsunori Hirata
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
High Reliability ◽  
Device Structure ◽  
Bonding Pressure ◽  
Flip Chip Bonding ◽  
Reflow Temperature ◽  
Device Structures ◽  
Bonding Technology ◽  
The Cost

As the current and next generation devices are embracing geometries below 28nm and requiring softer low-K dielectric isolation on very thin large silicon dies ∼ to perform a reliable die-to-package interconnect is becoming a challenge. Further, the high pressure from Cu wire bonding and high reflow temperature of conventional flip-chip bonding often results in damage of device structure. A new flip-chip bonding technology has been developed for such critical applications, and is claimed to be “damage free”. It uses soft bump made by non-full cured conductive paste on the package substrate. These soft bumps require ultra-low bonding pressure on the pad of the die. Thus the bonding process don't make any damage on ULK isolation layer. Details of the process, material sets used for such fragile device structures have been discussed. Reliability results are shared, which further ensures the robustness of this process. Finally, the cost advantage through adaptation of this process has also been elaborated.

Assessment of Silicon—On—Insulator Technologies for Vlsi

1985 ◽  
Vol 53 ◽  
Author(s):  
B-Y. Tsaur
Keyword(s):  
High Performance ◽  
Cost Effective ◽  
Silicon On Insulator ◽  
Current Status ◽  
High Dose ◽  
Future Prospects ◽  
Device Structures ◽  
Radiation Hardened ◽  
Near Term ◽  
Soi Technology

ABSTRACTA high—performance, cost—effective silicon—on—insulator (SOI) technology would have important near—term applications in radiation—hardened electronics and longer term applications in submicrometer VLSI. The advantages of SOI over bulk Si technology for these applications will be outlined, and CMOS, CJFET, andbipolar device structures being developed for SOI will be discussed. The current status and future prospects of the two most promising SOI technologies —— beam recrystallization and high—dose oxygen implantation —— will be reviewed, with emphasis on such issues critical to commercialization as material quality and manufacturing feasibility.

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