Special Aspects of the Production Technology for Multilayer Protective Materials Used in the Integrated Circuit Packages

Author(s):  
Anatoly Belous ◽  
Vitali Saladukha ◽  
Siarhei Shvedau
Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.


2000 ◽  
Vol 612 ◽  
Author(s):  
G. S. Shekhawat ◽  
O.V. Kolosov ◽  
G.A.D. Briggs ◽  
E. O. Shaffer ◽  
S. Martin ◽  
...  

AbstractA new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascence integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤ 10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.


2018 ◽  
Vol 7 (2.8) ◽  
pp. 340
Author(s):  
Vimlesh Singh ◽  
Priyanka Bansal ◽  
P K.Singhal

This paper presents an extensive survey of electromagnetic materials used for antenna fabrication, which find application in Civilian life as well as defense life. When a densely packed microwave integrated circuit is designed, it requires protection from higher power transient because of specific polarization and frequency response. To meet specification of such kind of microwave circuits it is desired to exploit properties of fabricating materials, which are not found in nature but can be prepared with specific proportion of chemical element combination. This study provides in-depth responses of materials toward electromagnetic wave's characteristics such as dielectric, flexible electronics, electrical and thermal properties, which have vast potential in communication engineering.


2020 ◽  
Vol 1 (11-12) ◽  
pp. 50-55
Author(s):  
L. V. Luchkina ◽  
G. G. Nikiforova ◽  
V. G. Vasiliev ◽  
S. V. Romanov

Polyurethane foam insulation based of environmentally friendly chemical components using novel foaming agents was obtained. Physical and mechanical properties of thermal insulation was investigating. The infl uence of foaming agents on insulation properties and production technology of preinsulated pipes, fi ttings and polyurethane shells was studied. It is shown that when using water and dimethoxymethane, polyurethane foam insulation has quite good physical and mechanical properties and can be used in the production of PI pipes, shells and fi ttings.


1999 ◽  
Author(s):  
Thomas Smekal ◽  
Cindy Briscoe ◽  
Tony Chan ◽  
Yung Chang ◽  
Seth Dobrin ◽  
...  

Abstract The development of an electric field cell lysis device for microfluidic applications will be presented. Detailed modeling of the electrode configuration for the optimization of the electric field has been performed. Device design and fabrication has been accomplished using traditional integrated circuit (IC) manufacturing techniques. As a result, murine lymphocytes have been lysed using several electrode configurations. The requisite electric field strength and pulse parameters for cell lysis were determined. The non-specific adsorption of the released DNA to the materials used in the fabrication of the device was observed. Surface passivation of the fabrication materials was effected through the use of silanization compounds.


1986 ◽  
Vol 29 (3) ◽  
pp. 32-34
Author(s):  
Wayne Harned

Contamination control in integrated circuit wafer processing has become a major concern within the last two to three years. The surface particle counters and liquid particle counters have identified many particle sources within wafer processing equipment. One of these sources which is often overlooked is bacteria from the deionized water which is utilized in various etch, clean, rinser/dryers, scrubbers, and positive photoresist develop systems. Bacteria as live or dead microorganisms or as fragments of these microorganisms are a particle source and are a source of low level metals contamination. Bacteria in equipment is overlooked by many integrated circuit manufacturers and was not addressed by equipment manufacturers until recently. In many cases, integrated circuit manufacturers monitor only final rinse tanks or quick dumps for bacteria level and do not sample the bacteria level from all sources of equipment. By testing for bacteria level at every source of water that comes in contact with the waters, one finds many areas of stagnant water where the bacteria counts are too-numerous-to-count (TNTC). The causes for these high bacteria counts are dead legs (plumbing within equipment which has stagnant water flow), water velocities too low, inadequately sized plumbing, and materials used in the plumbing of the equipment. The solutions to these problems must be addressed by equipment users and manufacturers modifying existing equipment and designing new equipment with bacteria control as a primary concern.


1991 ◽  
Vol 239 ◽  
Author(s):  
Stephen D. Senturia

ABSTRACTMicrosensors are measurement devices fabricated using planar integrated circuit technology together with enhancements generically called “micromachining”. It is well known that the thin-film materials used in microelectronics can have properties which differ from their bulk counterparts. In addition, thin-film materials exhibit residual stress, which is known to be strongly process dependent. The sensor designer must understand how the detailed process used to fabricate a particular device impacts the specific mechanical properties, hence, the expected mechanical device performance. This paper illustrates the problem of process-dependent material properties using examples of residual stress of several materials, and then presents an object-oriented material-property database which is being developed as part of a CAD system for microelectromechan-ical systems (MEMCAD).


1992 ◽  
Vol 260 ◽  
Author(s):  
Fabio Pintchovski ◽  
Ed Travis

ABSTRACTThe evolution of modern integrated circuit technology to sub micron dimensions has brought about a number of challenges, specially in the field of metallization. Decreasing junction depths have imposed stringent demands on the materials used for the electrical contacts. This is due to the potential interactions between the contact metal and silicon (or suicide in the case of salicide processes) causing junction leakage and/or shorting. The solution most commonly applied to this problem is that in which a barrier material is interposed between the metallization and the contact. The material most often selected for this purpose has been TiN. TiN can be deposited via the reactive sputtering of Ti in a N2 atmosphere or it can be also obtained by sputtering Ti and then reacting it with either N2 or NH3. Shrinking VLSI dimensions have brought about the need for improved planarization for the purposes of metal definition. It has also prevented the tapering of contacts for space saving reasons. Both of these issues resulted in deep, straight wall contacts with aspect ratios greater than 1 that cannot be metallized appropriately with conventional sputtering techniques. These requirements have driven the development of a conformai CVD TiN barrier process. This paper describes the evolution of the TiN metallization barrier from the requirements of 1.2μ to 0.35μ technologies.


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