Mechanical Properties of Microsensor Materials: How to Deal with the Process Dependences?

1991 ◽  
Vol 239 ◽  
Author(s):  
Stephen D. Senturia
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Integrated Circuit ◽  
Object Oriented ◽  
Cad System ◽  
Measurement Devices ◽  
Materials Used ◽  
Oriented Material ◽  
Circuit Technology

ABSTRACTMicrosensors are measurement devices fabricated using planar integrated circuit technology together with enhancements generically called “micromachining”. It is well known that the thin-film materials used in microelectronics can have properties which differ from their bulk counterparts. In addition, thin-film materials exhibit residual stress, which is known to be strongly process dependent. The sensor designer must understand how the detailed process used to fabricate a particular device impacts the specific mechanical properties, hence, the expected mechanical device performance. This paper illustrates the problem of process-dependent material properties using examples of residual stress of several materials, and then presents an object-oriented material-property database which is being developed as part of a CAD system for microelectromechan-ical systems (MEMCAD).

Emerging Techniques for the Characterization of Nano-Mechanical Properties of Integrated Circuit Components

2008 ◽  
Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair
Keyword(s):  
Mechanical Properties ◽  
Quality Control ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Manufacturing Process ◽  
Solder Bumps ◽  
Initial Work ◽  
Circuit Components ◽  
Materials Used

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.

Measurements of Residual Stress in the Layers of Thin Film Micro-Gas Sensors

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Micro Gas Sensor ◽  
Thin Film Layer ◽  
Film Layer ◽  
The Difference ◽  
Stress States

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.

Optimization of mechanical properties of thin free-standing metal films for RF-MEMS

2004 ◽  
Vol 820 ◽  
Author(s):  
Jaap M.J. den Toonder ◽  
Auke R. van Dijken
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Yield Strength ◽  
Rf Mems ◽  
High Yield ◽  
Film Material ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Aluminum Films ◽  
Materials Used

AbstractThe mechanical properties of the thin film materials used in RF-MEMS are crucial for the reliability and proper functioning of the devices. In this paper we study a large number of aluminum alloys as possible RF-MEMS thin film materials. The yield strength and creep properties are measured using nano-indentation. The results show that the mechanical properties of thin aluminum films can be improved substantially by alloying elements. Of the alloys studied in this paper, AlCuMgMn in particular seems quite promising as a thin film material for RF MEMS, having both high yield strength and little creep. Using X-ray diffraction and electron microscopy, the observed effects are partly explained.

Nanoscale Elastic Imaging of Aluminum/Low-k Dielectric Interconnect Structures

2000 ◽  
Vol 612 ◽  
Author(s):  
G. S. Shekhawat ◽  
O.V. Kolosov ◽  
G.A.D. Briggs ◽  
E. O. Shaffer ◽  
S. Martin ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Integrated Circuit ◽  
Nanometer Scale ◽  
Metrological Reliability ◽  
Force Microscopy ◽  
Polymer Interface ◽  
Properties Of Materials ◽  
Materials Used ◽  
Low K ◽  
Ic Test

AbstractA new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascence integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤ 10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.

Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

2016 ◽  
Vol 52 (15) ◽  
pp. 1318-1319 ◽  
Author(s):  
Jing Ai ◽  
Yong Hong Zhang ◽  
Kai Da Xu ◽  
Yang Yang ◽  
Yin Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
Hybrid Integrated Circuit ◽  
X Band ◽  
Circuit Technology

scholarly journals Evolution of Principle and Practice of Electrodeposited Thin Film: A Review on Effect of Temperature and Sonication

2011 ◽  
Vol 2011 ◽  
pp. 1-16 ◽  
Author(s):  
A. Mallik ◽  
B. C. Ray
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Electrochemical Deposition ◽  
Surface Engineering ◽  
Effect Of Temperature ◽  
Structure And Morphology ◽  
Nucleation Mechanisms ◽  
Effects Of Temperature

This review discusses briefly the important aspects of thin films. The introduction of the article is a summary of evolution of thin films from surface engineering, their deposition methods, and important issues. The fundamental aspects of electrochemical deposition with special emphasis on the effect of temperature on the phase formation have been reviewed briefly. The field of sonoelectrochemistry has been discussed in the paper. The literature regarding the effects of temperature and sonication on the structure and morphology of the deposits and nucleation mechanisms, residual stress, and mechanical properties has also been covered briefly.

Effect of the Mechanical Properties and Geometric Parameters on the Crack Density of the Thin Film/Substrate System under Residual Stress and Uniaxial Tensile Loading

2013 ◽  
Vol 470 ◽  
pp. 521-524
Author(s):  
Ban Quan Yang ◽  
Jun Du ◽  
Xue Jun Chen ◽  
Wei Hai Sun ◽  
Hong Qian Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Crack Density ◽  
Tensile Loading ◽  
Interface Layer ◽  
Geometric Parameters ◽  
Uniaxial Tensile ◽  
Uniaxial Tensile Loading ◽  
Film Substrate

The effect of the mechanical properties and geometric parameters on the crack density of the thin film/substrate system under residual stress and uniaxial tensile loading is investigated in this work. The numerical results show that the crack density of the thin film increases with the increase of the Youngs modulus of the thin film and (or) the shear modules of the interface layer, and it decreases with the increase of the thickness of the thin film and (or) the fracture strength of the thin film. These results can help us more deeply understand the fracture behavior of the brittle thin film on the substrate under residual stress and external tensile loading.

Tuning the Mechanical Properties of SiO2 Thin Film for MEMS Application

2003 ◽  
Vol 795 ◽  
Author(s):  
Wang-Shen Su ◽  
Weileun Fang ◽  
Ming-Shih Tsai
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Plasma Treatment ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Plasma Surface ◽  
Sio2 Thin Film ◽  
Plasma Treatments ◽  
Novel Method

ABSTRACTThis study reported a novel method for tuning thin film mechanical properties by means of plasma surface modification. In order to demonstrate the feasibility of this approach, various plasma treatments, including O2, H2, NH3 atmospheres, were implemented to tune the Young's modulus and residual stress of SiO2 film. Without plasma treatment, the static tip deflection of 200μm long SiO2 cantilever was 9.01μm. After treatment with H2, O2, and NH3 plasma, the tip deformation of the treated cantilevers became 10.22μm, 8.28μm, and -6.84μm respectively. The Young's modulus of the SiO2 cantilever without plasma treatment was 76.3GPa. After treated with H2, O2, NH3 plasma, the Young's modului of those treated cantilevers became 70.8 GPa, 74.7 GPa, and 71.4 GPa, respectively. Hence, after H2 and NH3 plasma treatment, the equivalent elastic modulus of SiO2 cantilever could be reduced about 7%.

Sign in / Sign up

Export Citation Format

Share Document