Integrated Pre-Gate Dielectric Cleaning and Surface Preparation

1996 ◽  
pp. 217-234
Author(s):  
Yi Ma ◽  
Martin L. Green
Keyword(s):  
Gate Dielectric ◽  
Surface Preparation

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

Characterization of Oxide Etching and Wafer Cleaning using Vapor-Phase Anhydrous HF and Ozone

1997 ◽  
Vol 470 ◽  
Author(s):  
Barbara Froeschle ◽  
Lutz Deutschmann ◽  
Anton J. Bauer ◽  
Edmund P. Burte
Keyword(s):  
Vapor Phase ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Uv Light ◽  
Reference Sample ◽  
Surface Preparation ◽  
Time Dependent Dielectric Breakdown ◽  
Wafer Cleaning ◽  
Phase Surface ◽  
Cluster Tool

ABSTRACTA cleaning process using anhydrous HF (AHF)/methanol and ozone is carried out in a STEAG-AST Vapor Phase Cleaning module (VPC). This module is integrated in a state-of-the-art cluster tool also consisting of a STEAG-AST Rapid Thermal Oxidation module (RTO). The dependence of AHF vapor phase etch rate of thermally grown silicon dioxide on different process parameters, such as etch time, AHF-flow, and temperature is evaluated. The optimized etch process is found to be at a temperature of 40°C and at a pressure of 50 mbar for this VPC module. Using the above etch parameters various combinations of vapor phase surface preparation chemistries combining AHF etching and ozone/UV cleaning are evaluated.To demonstrate the feasibility of this cluster tool for advanced gate dielectric formation, 4.0 nm thin oxide is grown directly after the cleaning in the RTO module without breaking the vacuum. Time dependent dielectric breakdown results for oxides pre-oxidation-cleaned in AHF, and in AHF followed by ozone are compared to a reference sample without any dry pre-oxidation cleaning. It can be shown, that the cleaning in AHF with a subsequent ozone step at 200°C under UV light leads to improved breakdown characteristics compared to AHF/methanol cleanings without such subsequent ozone/UV step or conventional wet cleaning using HF-Dip.

EELS characterization of “Smut” layer films on steel surface prepared for chrome plating by anodic etching

1995 ◽  
Vol 53 ◽  
pp. 538-539
Author(s):  
E Y. Wang ◽  
J. T. Cherian ◽  
A. Madsen ◽  
R. M. Fisher
Keyword(s):  
Steel Surface ◽  
Surface Preparation ◽  
Treatment Method ◽  
Chrome Plating ◽  
Transmission Electron ◽  
Alloy Steels ◽  
Pre Treatment ◽  
Hard Chrome ◽  
Electron Energy Loss

Many steel parts are electro-plated with chromium to protect them against corrosion and to improve their wear-resistance. Good adhesion of the chrome plate to the steel surface, which is essential for long term durability of the part, is extremely dependent on surface preparation prior to plating. Recently, McDonnell Douglas developed a new pre-treatment method for chrome plating in which the steel is anodically etched in a sulfuric acid and hydrofluoric acid solution. On carbon steel surfaces, this anodic pre-treatment produces a dark, loosely adhering material that is commonly called the “smut” layer. On stainless steels and nickel alloys, the surface is only darkened by the anodic pre-treatment and little residue is produced. Anodic pre-treatment prior to hard chrome plating results in much better adherence to both carbon and alloy steels.We have characterized the anodic pre-treated steel surface and the resulting “smut” layer using various techniques including electron spectroscopy for chemical analysis (ESCA) on bulk samples and transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) on stripped films.

Selective Corrosion of brazed joint between BNi-2 filler metal and stainless steel 316

1996 ◽  
Vol 54 ◽  
pp. 218-219
Author(s):  
H. S. Kim ◽  
R. U. Lee
Keyword(s):  
Stainless Steel ◽  
Filler Metal ◽  
Surface Preparation ◽  
Optical Microscope ◽  
Heating Element ◽  
Incomplete Fusion ◽  
Atmospheric Conditions ◽  
Leak Test ◽  
High Temperature Side ◽  
Inconel 600

A heating element/electrical conduit assembly used in the Orbiter Maneuvering System failed a leak test during a routine refurbishment inspection. The conduit, approximately 100 mm in length and 12 mm in diameter, was fabricated from two tubes and braze-joined with a sleeve. The tube on the high temperature side (heating element side) and the sleeve were made of Inconel 600 and the other tube was stainless steel (SS) 316. For the filler metal, a Ni-Cr-B brazing alloy per AWS BNi-2, was used. A Helium leak test spotted the leak located at the joint between the sleeve and SS 316 tubing. This joint was dissected, mounted in a plastic mold, polished, and examined with an optical microscope. Debonding of the brazed surfaces was noticed, more pronounced toward the sleeve end which was exposed to uncontrolled atmospheric conditions intermittently. Initially, lack of wetting was suspected, presumably caused by inadequate surface preparation or incomplete fusion of the filler metal. However, this postulation was later discarded based upon the following observations: (1) The angle of wetting between the fillet and tube was small, an indication of adequate wetting, (2) the fillet did not exhibit a globular microstructure which would be an indication of insufficient melting of the filler metal, and (3) debonding was intermittent toward the midsection of the sleeve.

CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-421-C4-424 ◽  
Author(s):  
A. STRABONI ◽  
M. BERENGUER ◽  
B. VUILLERMOZ ◽  
P. DEBENEST ◽  
A. VERNA ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Cmos Technology

Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate

2002 ◽  
Vol 716 ◽  
Author(s):  
Parag C. Waghmare ◽  
Samadhan B. Patil ◽  
Rajiv O. Dusane ◽  
V.Ramgopal Rao
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Substrate Surface ◽  
Scaling Limit ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Poor Performance ◽  
State Density ◽  
Direct Tunneling Current

AbstractTo extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling current becomes significant, members of our group embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD methods and its properties significantly depend on the method of deposition. Although these CVD methods can give good physical properties, the electrical properties of devices made with CVD silicon nitride show very poor performance related to very poor interface, poor stability, presence of large quantity of bulk traps and high gate leakage current. We have employed the rather newly developed Hot Wire Chemical Vapor Deposition (HWCVD) technique to develop the a:SiN:H material. From the results of large number of optimization experiments we propose the atomic hydrogen of the substrate surface prior to deposition to improve the quality of gate dielectric. Our preliminary results of these efforts show a five times improvement in the fixed charges and interface state density.

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

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