scholarly journals Thermoelectric properties of holey silicon at elevated temperatures

2020 ◽  
Vol 14 ◽  
pp. 100224 ◽  
Author(s):  
N. Liu ◽  
T. Zhu ◽  
M.G. Rosul ◽  
J. Peters ◽  
J.E. Bowers ◽  
...  
2011 ◽  
Vol 170 ◽  
pp. 41-46
Author(s):  
Horng Jyh Gao ◽  
Wu Ruei Huang ◽  
Ching Cherng Wu ◽  
Yung Kang Kuo ◽  
Ching Hwa Ho

In this study, Bi2Te3 was selected as a matrix material and an immiscible semiconductor material CdTe with a wider energy band gap was precipitated to form microstructures in it. For this purpose, a series of two-component composites (Bi2Te3)1-x/(CdTe)x, with x = 0.01, 0.05, 0.1, 0.15, 0.2 were prepared by melting, high speed rocking and quenching technique. The composition and microstructure of these two-component composites were examined by X-ray and SEM. Thermoelectric properties including Seebeck coefficient, electric resistivity, and thermal conductivity were measured from 30 K to 400 K. The compositional and temperature dependence of the microstructure and thermoelectric properties of (Bi2Te3)1-x/(CdTe)x composites were discussed. It is found that (Bi2Te3)0.99/(CdTe)0.01 exhibits a better thermoelectric performance than that of Bi2Te3 at elevated temperatures. The figure of merit (ZT) of (Bi2Te3)0.99/(CdTe)0.01 is about 0.64 at 400 K.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Bogumiła Kumanek ◽  
Grzegorz Stando ◽  
Paweł Stando ◽  
Karolina Matuszek ◽  
Karolina Z. Milowska ◽  
...  

AbstractCarbon nanotubes (CNTs) are materials with exceptional electrical, thermal, mechanical, and optical properties. Ever since it was demonstrated that they also possess interesting thermoelectric properties, they have been considered a promising solution for thermal energy harvesting. In this study, we present a simple method to enhance their performance. For this purpose, thin films obtained from high-quality single-walled CNTs (SWCNTs) were doped with a spectrum of inorganic and organic halide compounds. We studied how incorporating various halide species affects the electrical conductivity, the Seebeck coefficient, and the Power Factor. Since thermoelectric devices operate under non-ambient conditions, we also evaluated these materials' performance at elevated temperatures. Our research shows that appropriate dopant selection can result in almost fivefold improvement to the Power Factor compared to the pristine material. We also demonstrate that the chemical potential of the starting CNT network determines its properties, which is important for deciphering the true impact of chemical and physical functionalization of such ensembles.


2015 ◽  
Vol 3 (1) ◽  
pp. 189-197 ◽  
Author(s):  
Devendraprakash Gautam ◽  
Markus Engenhorst ◽  
Carolin Schilling ◽  
Gabi Schierning ◽  
Roland Schmechel ◽  
...  

ZnO is a promising n-type oxide thermoelectric material, which is stable in air at elevated temperatures.


2005 ◽  
Vol 502 ◽  
pp. 3-6
Author(s):  
F.S. Ohuchi ◽  
D.A. Kukuruznyak ◽  
T. Chiyow

Transition metal oxides form a series of compounds with a uniquely wide range of electronic properties. Some have been known since antiquity, whereas other properties, such thermoelectricity (TE) have been discovered rather recently. In developing such material systems, Mn, Cu, Co or Ni oxides and their binary combinations were considered for thermoelectric applications over forty years ago at the Westinghouse Research Laboratory [1,2]. Complex quaternary compositions can potentially deliver more flexibility in terms for structural variations and their transport mechanisms, anticipating better performance for thermoelectric properties [3]. Over a wide range of compositions, containing Mn, Cu, Ni, and Co, the crystal structure basically takes on the spinel (AB2O4) configuration, where oxygen tetrahedrally coordinates A-sites and octahedrally coordinates the B-sites; however, the unit cell contains 56 atoms with 8 A-site atoms, 16 B-site atoms, and 32 oxygen atoms. Electrical conduction in similar oxide compounds has been shown to originate from a charge hopping mechanism: either variable range hopping or small-polaron hopping [4,5]. A small-polaron is a charge that resides on a cation but has a wave function extending beyond that of a normal valence electron. The potentially delocalized nature of this charge combined with the strain field generated by the neighboring atoms has two defining characteristics of a polaron [6, 7]. The consensus is that hopping occurs between the Mnoccupied B-sites of the unit cell, and these sites lie along the <110> directions. The hopping between adjacent B-B sites provides the shortest inter-site gaps, as compared to the A-B or A-A inter-site distances. Current thermoelectric materials are suited to room temperature applications, yet it remains highly desirable to identify new materials that function efficiently at elevated temperatures. Oxides are a natural choice due to their high temperature stability. In an attempt to develop complex multi-component oxide systems having specific properties for thermoelectric applications, we describe here our strategy in finding optimum compositions through “combinatorial material search (CMS)”. Once the desired compositions are selected, the materials are then fabricated by low temperature synthesis, stabilizing thermodynamically metastable valence states of the ions. The present study was aimed at finding material’s compositions having unique thermoelectric properties; however, the strategy described here can be used, in general, to search new material systems for specific applications of interest. The application of CMS, originally developed by Xiang and Schultz [8], promises to increase an ability to identify and optimize the material compositions and their properties in a very efficient way. We have recently demonstrated an effective use of CMS on a Ni-Cu-Mn based oxide system. Experimentally, three target materials (NiO, CuO and Mn2O3) were sequentially deposited in thin film forms using a pulsed laser deposition (PLD) technique, in which thickness of the each layer was tapered over the substrate. After sequentially depositing three material layers, the process was repeated for multiple rounds until desired thickness is achieved on the substrate. By proper annealing, three materials were mutually diffused to form continuously graded ternary compositions on the substrate. In Fig. 1, the CMS process is schematically illustrated.


2013 ◽  
Vol 10 (12) ◽  
pp. 1857-1861 ◽  
Author(s):  
Y. Oto ◽  
T. Iida ◽  
T. Sakamoto ◽  
R. Miyahara ◽  
A. Natsui ◽  
...  

2013 ◽  
Vol 1543 ◽  
pp. 99-104
Author(s):  
Markus Engenhorst ◽  
Devendraprakash Gautam ◽  
Carolin Schilling ◽  
Markus Winterer ◽  
Gabi Schierning ◽  
...  

ABSTRACTIn search for non-toxic thermoelectric materials that are stable in air at elevated temperatures, zinc oxide has been shown to be one of only few efficient n-type oxidic materials. Our bottom-up approach starts with very small (<10 nm) Al-doped ZnO nanoparticles prepared from organometallic precursors by chemical vapor synthesis using nominal doping concentrations of 2 at% and 8 at%. In order to obtain bulk nanostructured solids, the powders were compacted in a current-activated pressure-assisted densification process. Rapid thermal annealing was studied systematically as a means of further dopant activation. The thermoelectric properties are evaluated with regard to charge carrier concentration and mobility. A Jonker-type analysis reveals the potential of our approach to achieve high power factors. In the present study, power factors larger than 4×10-4 Wm-1K-2 were measured at temperatures higher than 600 °C.


Author(s):  
N. M. P. Low ◽  
L. E. Brosselard

There has been considerable interest over the past several years in materials capable of converting infrared radiation to visible light by means of sequential excitation in two or more steps. Several rare-earth trifluorides (LaF3, YF3, GdF3, and LuF3) containing a small amount of other trivalent rare-earth ions (Yb3+ and Er3+, or Ho3+, or Tm3+) have been found to exhibit such phenomenon. The methods of preparation of these rare-earth fluorides in the crystalline solid form generally involve a co-precipitation process and a subsequent solid state reaction at elevated temperatures. This investigation was undertaken to examine the morphological features of both the precipitated and the thermally treated fluoride powders by both transmission and scanning electron microscopy.Rare-earth oxides of stoichiometric composition were dissolved in nitric acid and the mixed rare-earth fluoride was then coprecipitated out as fine granules by the addition of excess hydrofluoric acid. The precipitated rare-earth fluorides were washed with water, separated from the aqueous solution, and oven-dried.


Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
B. Mastel

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.


Author(s):  
Robert C. Rau ◽  
Robert L. Ladd

Recent studies have shown the presence of voids in several face-centered cubic metals after neutron irradiation at elevated temperatures. These voids were found when the irradiation temperature was above 0.3 Tm where Tm is the absolute melting point, and were ascribed to the agglomeration of lattice vacancies resulting from fast neutron generated displacement cascades. The present paper reports the existence of similar voids in the body-centered cubic metals tungsten and molybdenum.


Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.


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