Low voltage operation of large area polymer LEDs

This paper describes a standard cell-based new approach of comparator design for flash ADC. Conventional flash ADC comparator consumes up to 60% of the power due to resistive ladder network and analog comparators. Threshold inverter quantized (TIQ) comparators reported earlier have improved speed and provide low-power, low-voltage operation. But they need feature size variation and have non-linearity issues. Here, a new standard cell comparator is proposed which retains all advantages of TIQ comparator and provides improved linearity with reduced hardware complexity. A 4-bit ADC designed using the proposed comparator requires 206 minimum-sized transistors and provides large area saving compared to previously proposed designs. Thermometer code is partitioned using algebraic division theorem. This conversion is used for mathematical modeling and complexity reduction of decoder circuit using semi-parallel organization of comparators. Circuit is designed using 90 nm technology which exhibits satisfactory performance even in process variation.

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Current State of Biological High-Resolution Scanning Electron Microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100102985 ◽

1988 ◽

Vol 46 ◽

pp. 180-181 ◽

Cited By ~ 1

Author(s):

Klaus-Ruediger Peters

Keyword(s):

High Performance ◽

Low Voltage ◽

Backscattered Electrons ◽

Lens Position ◽

Low Voltage Operation ◽

Signal Collection ◽

Probe Size ◽

Electron Microscopes ◽

Scanning Electron Microscopes ◽

Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

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High resolution at low voltage: A new approach

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100152355 ◽

1989 ◽

Vol 47 ◽

pp. 76-77

Author(s):

Arthur V. Jones

Keyword(s):

Low Voltage ◽

Emission Sources ◽

New Approach ◽

Design Concepts ◽

Probe Diameter ◽

Low Voltage Operation ◽

Sufficient Intensity ◽

Electron Microscopes ◽

Scanning Electron Microscopes ◽

Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

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A liquid crystal cell with double-side protrusion electrodes for fast response and low-voltage operation

Liquid Crystals ◽

10.1080/02678292.2015.1116631 ◽

2015 ◽

pp. 1-6

Author(s):

Tae-Hoon Choi ◽

Young-Jin Park ◽

Jung-Wook Kim ◽

Tae-Hoon Yoon

Keyword(s):

Liquid Crystal ◽

Low Voltage ◽

Fast Response ◽

Liquid Crystal Cell ◽

Crystal Cell ◽

Low Voltage Operation

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Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05408-5 ◽

2021 ◽

Vol 32 (7) ◽

pp. 8347-8353

Author(s):

Li Yuan ◽

Shasha Li ◽

Guoxiang Song ◽

Xian wen Sun ◽

Xinan Zhang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gallium Oxide ◽

Gate Dielectric ◽

Low Voltage ◽

Oxide Thin Film ◽

Solution Processed ◽

Low Voltage Operation

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All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

Applied Sciences ◽

10.3390/app10196656 ◽

2020 ◽

Vol 10 (19) ◽

pp. 6656

Author(s):

Stefano Lai ◽

Giulia Casula ◽

Pier Carlo Ricci ◽

Piero Cosseddu ◽

Annalisa Bonfiglio

Keyword(s):

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

High Mobility ◽

Chemical Vapor ◽

Cost Effective ◽

Large Area ◽

Parylene C ◽

Biomedical Sensing ◽

Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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