Reduced Complexity Linearity Improved Threshold Quantized Comparator Based Flash ADC

2016 ◽  
Vol 26 (03) ◽  
pp. 1750046 ◽  
Author(s):  
Prachi Palsodkar ◽  
Pravin Dakhole ◽  
Prasanna Palsodkar
Keyword(s):  
Low Voltage ◽  
Size Variation ◽  
Standard Cell ◽  
Hardware Complexity ◽  
Large Area ◽  
Flash Adc ◽  
Low Voltage Operation ◽  
Division Theorem ◽  
Ladder Network ◽  
Tiq Comparator

This paper describes a standard cell-based new approach of comparator design for flash ADC. Conventional flash ADC comparator consumes up to 60% of the power due to resistive ladder network and analog comparators. Threshold inverter quantized (TIQ) comparators reported earlier have improved speed and provide low-power, low-voltage operation. But they need feature size variation and have non-linearity issues. Here, a new standard cell comparator is proposed which retains all advantages of TIQ comparator and provides improved linearity with reduced hardware complexity. A 4-bit ADC designed using the proposed comparator requires 206 minimum-sized transistors and provides large area saving compared to previously proposed designs. Thermometer code is partitioned using algebraic division theorem. This conversion is used for mathematical modeling and complexity reduction of decoder circuit using semi-parallel organization of comparators. Circuit is designed using 90 nm technology which exhibits satisfactory performance even in process variation.

Low voltage operation of large area polymer LEDs

1997 ◽  
Vol 91 (1-3) ◽  
pp. 109-111 ◽  
Author(s):  
C. Liedenbaum ◽  
Y. Croonen ◽  
P. van de Weijer ◽  
J. Vleggaar ◽  
H. Schoo
Keyword(s):  
Low Voltage ◽  
Large Area ◽  
Polymer Leds ◽  
Low Voltage Operation

scholarly journals TIQ Flash ADC Design using a Low Power Multiplier Based Encoder

2019 ◽  
Vol 8 (2S2) ◽  
pp. 226-229
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Low Voltage ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Large Power ◽  
Flash Adc ◽  
Analog To Digital ◽  
Tiq Comparator ◽  
The Impact

Threshold Inverter Quantization (TIQ) for applications of system-on-chip (SoC) depending on CMOS flash analog-to-digital converter (ADC). The TIQ technique which uses two cascaded CMOS inverters as a voltage comparator. However, this TIQ method must be created to meet the latest SoC trends, which force ADCs to be integrated with another electronic circuit on the chip and focus on low-power and low-voltage applications. TIQ comparator reduced the impact of variations in the process, temperature, and power supply voltage. Therefore, we obtained a higher TIQ flash ADC speed and resolution. TIQ flash ADC reduced / managed power dissipation. We obtain large power savings by managing the power dissipation in the comparator. Furthermore, the new comparator has a huge benefit in power dissipation and noise rejection comparative to the TIQ comparator [1]. The findings indicate that the TIQ flash ADC based on Modied mux attain heavy-speed transformation and has a tiny size, low-power dissipation and operation of lowvoltage compared to another flash ADCs.

scholarly journals Design and Analysis of Multiplexer Based 4-Bit Flash ADC

2019 ◽  
Vol 8 (6S2) ◽  
pp. 797-802
Keyword(s):  
Analog Circuits ◽  
Processing Speed ◽  
Power Dissipation ◽  
Sampling Rate ◽  
Chip Area ◽  
Flash Adc ◽  
Input Signals ◽  
Low Power Dissipation ◽  
Ladder Network ◽  
Tiq Comparator

In reality, signals exist in analog format. The digital circuits are more convenient than analog circuits with respect to processing speed and efficiency in transmission. Hence there is a great demand for ADC converters. The typical Flash ADC contains resistor ladder circuit, comparator and code converter. The most advantageous parameter of Flash ADC is its speed. Hence it can be used in variety of applications such as micro electronics, wireless sensor networks, transceivers. Flash ADC still suffers from minimum resolution and consumes large amount of power. However these are due to its complexity in terms of chip area requirement in comparison with other ADCs. This new technique of four bit Flash ADC using TIQ comparator is implemented here. Here, a comparison is brought between the input signals with internal built threshold using TIQ comparators. It avoids the too much resistor usage in ladder network. In general, 2N -1 number of TIQ comparators is required to design N-bit flash ADC. TIQ output was encoded into binary by an encoder. A new MUX based encoding technique has been used to enhance the conversion speed for achieving highest sampling rate with low power dissipation. The design is simulated in Mentor Graphics environment using 130nm technology and result shows a deep reduce in the power consumption i.e.0.833µW and conversion speed 15.393ns for 4-bit ADC.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

High resolution at low voltage: A new approach

1989 ◽  
Vol 47 ◽  
pp. 76-77
Author(s):  
Arthur V. Jones
Keyword(s):  
Low Voltage ◽  
Emission Sources ◽  
New Approach ◽  
Design Concepts ◽  
Probe Diameter ◽  
Low Voltage Operation ◽  
Sufficient Intensity ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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