Stacking faults in deformed α-silicon nitride single crystals
Silicon nitride(Si3N4) is well known for its high toughness and strength. This is the reason why it is selected for ceramic turbo charger rotors in automobile engines. However, the high strength of most sintered Si3N4 products drops above 1200°C because sintering aids like Y2O3 and MgO are required which form glassy phases with low melting points on the grain boundaries. This secondary phase degrades the high temperature characteristics of Si3N4. In order to overcome this deficiency, much work has been reported which aims at crystallizing or removing the glassy phase. If this aim could be successful, resulting in an increase in high temperature strength, other processes would determine the high temperature performance of Si3N4, such as diffusional creep and dislocation slip. Line and planar defects in Si3N4 play an important role in such the processes particularly in slip, however, available knowledge about them is limited. In the present work, stacking faults in deformed Si3N4 single crystals are investigated using high resolution electron microscopy(HREM).