Microscopy of porous ceramics

1989 ◽  
Vol 47 ◽  
pp. 438-439
Author(s):  
H. M. Kerch ◽  
R. A. Gerhardt
Keyword(s):  
Porous Ceramics ◽  
Specimen Preparation ◽  
High Porosity ◽  
Ion Milling ◽  
Forming Process ◽  
Preparation Methods ◽  
Pore Texture ◽  
Proper Design ◽  
And Function ◽  
Function Information

Highly porous ceramics are employed in a variety of engineering applications due to their unique mechanical, optical, and electrical characteristics. In order to achieve proper design and function, information about the pore structure must be obtained. Parameters of importance include pore size, pore volume, and size distribution, as well as pore texture and geometry. A quantitative determination of these features for high porosity materials by a microscopic technique is usually not done because artifacts introduced by either the sample preparation method or the image forming process of the microscope make interpretation difficult.Scanning electron microscopy for both fractured and polished surfaces has been utilized extensively for examining pore structures. However, there is uncertainty in distinguishing between topography and pores for the fractured specimen and sample pullout obscures the true morphology for samples that are polished. In addition, very small pores (nm range) cannot be resolved in the S.E.M. On the other hand, T.E.M. has better resolution but the specimen preparation methods involved such as powder dispersion, ion milling, and chemical etching may incur problems ranging from preferential widening of pores to partial or complete destruction of the pore network.

scholarly journals A comprehensive approach for artifact-free sample preparation and assessment of mitochondrial morphology in tissue and cultured cells

2021 ◽  
Author(s):  
Antentor Hinton ◽  
Prasanna Katti ◽  
Trace A. Christensen ◽  
Margaret Mungai ◽  
Jianqiang Shao ◽  
...  
Keyword(s):  
Structural Changes ◽  
Cultured Cells ◽  
Mitochondrial Dynamics ◽  
Mitochondrial Morphology ◽  
Specimen Preparation ◽  
Preparation Methods ◽  
Cellular Environment ◽  
Stress Changes ◽  
Precise Relationship ◽  
And Function

Mitochondrial dynamics and morphology (fission, fusion, and the formation of nanotunnels) are very sensitive to the cellular environment and may be adversely affected by oxidative stress, changes in calcium levels, and hypoxia. Investigating the precise relationship between the organelle structure and function requires methods that can adequately preserve the structure while providing accurate, quantitative measurements of mitochondrial morphological attributes. Here, we demonstrate a practical approach for preserving and measuring fine structural changes in two-dimensional electron micrographs, obtained using transmission electron microscopy, highlighting the specific advantages of this technique. Additionally, this study defines a set of quantifiable metrics that can be applied to measure mitochondrial architecture and other organellar structures. Finally, we validated specimen preparation methods that avoid the introduction of morphological artifacts in mitochondrial appearance that do not require whole-animal perfusion.

Preparation of Large Thin Area Vlsi Tem Specimens by Dimpling With A “Flatting Tool”

1991 ◽  
Vol 254 ◽  
Author(s):  
Helen L. Humiston ◽  
Bryan M. Tracy ◽  
M. Lawrence ◽  
A. Dass
Keyword(s):  
Cross Section ◽  
Milling Time ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Ion Milling ◽  
Sampling Area ◽  
Preparation Methods

AbstractAn alternative VLSI TEM specimen preparation technique has been developed to produce 100μm diameter electron transparent thin area by using a conventional dimpler with a texmet padded ‘flatting tool’ for dimpling and a microcloth padded ‘flatting tool’ for polishing, followed by low angle ion milling. The advantages of this technique are a large sampling area and shorter milling times than conventional specimen preparation methods. In the following, we report the details of the modified dimpling technique. The improvements in available electron transparency, and a decrease in ion milling time are demonstrated with the preparation of planar and cross section VLSI device samples.

Tem Specimen Preparation for Display Materials of Vacuum Fluorescent Displays

1998 ◽  
Vol 4 (S2) ◽  
pp. 870-871
Author(s):  
T. Dolukhanyan ◽  
C. Sung ◽  
S. Ahn ◽  
J. Lee
Keyword(s):  
Bulk Material ◽  
Low Cost ◽  
High Yield ◽  
Specimen Preparation ◽  
List Type ◽  
Ion Milling ◽  
Cross Sectional ◽  
Preparation Methods ◽  
Plan View ◽  
Submicron Scale

Further development of Vacuum Fluorescent Displays (Fig.l) for low cost production and high yield requires investigation of all the components on a submicron scale at various processing stages.A variety of specimen preparation methods have been used for making different types of high quality cross-sectional and plan-view TEM specimens from:1.Initial phosphor materials - ZnCdS powders admixed with conducting powder of ln2O3;2.In2O3 mixed ZnCdS phosphor layers of ready-made working VFD;3.W - filament cathodes coated with (Ba,Sr,Ca) oxides.Rapid sharing of results.Group 1 specimens were made both by direct dispersion of phosphor powder particles on the carbon coated copper grid from acetone diluted powder suspension, and by preparation of cured bulk material from the powder using Gatan G-l epoxy, followed by cutting, grinding-dimpling and final ion milling in Gatan DuoMill 600 (Fig.2).

The Effect of TEM Specimen Preparation Method on Ultra-Thin Gate Dielectric Analysis

2003 ◽  
Author(s):  
A. Y. Du ◽  
C. H. Tung ◽  
B. H. Freitag ◽  
W. Y. Zhang ◽  
S. Lim ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Preparation Method ◽  
Dielectric Materials ◽  
Specimen Surface ◽  
Specimen Preparation ◽  
Dielectric Analysis ◽  
Ion Milling ◽  
Preparation Methods ◽  
Materials Analysis ◽  
Short Time

Abstract The three typical TEM specimen preparation methods are investigated for two different ultra-thin gate dielectric materials analysis. The results show that the mechanical polishing with short time, low angle ion milling is best specimen preparation method for both samples. FIB finial thinning can be used for SiON gate dielectric specimen analysis, but is not suitable for HfO2 gate dielectric analysis. After FIB thinning, severe Ga and Pt contamination on the specimen surface is found when using HR-STEM/HAADF imaging.

Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Grids

2018 ◽  
Author(s):  
M. J. Campin ◽  
C. S. Bonifacio ◽  
P. Nowakowski ◽  
P. E. Fischione ◽  
L. A. Giannuzzi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Carbon Support ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Narrow Beam ◽  
Ion Milling ◽  
Preparation Methods ◽  
Argon Ion

Abstract The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we show how low-energy (< 1 keV), narrow-beam (< 1 μm diameter) Ar ion milling can be used to thin specimens and remove gallium from EXLO FIB specimens mounted on various support grids.

Enhancement of Contrast in the CEM and STEM Using Bumpy Specimens and Employing the “Dappled Field” Mode of Operation

1974 ◽  
Vol 32 ◽  
pp. 552-553 ◽  
Author(s):  
L. Gandolfi ◽  
J. Reiffel
Keyword(s):  
Operating Mode ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Specimen Preparation ◽  
Field Mode ◽  
Preparation Methods ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Mode Of Operation ◽  
Scanning Transmission

Calculations have been performed on the contrast obtainable, using the Scanning Transmission Electron Microscope, in the observation of thick specimens. Recent research indicates a revival of an earlier interest in the observation of thin specimens with the view of comparing the attainable contrast using both types of specimens.Potential for biological applications of scanning transmission electron microscopy has led to a proliferation of the literature concerning specimen preparation methods and the controversy over “to stain or not to stain” in combination with the use of the dark field operating mode and the same choice of technique using bright field mode of operation has not yet been resolved.

Corrections for surface films in microanalysis by EDS and EELS

1992 ◽  
Vol 50 (2) ◽  
pp. 1230-1231
Author(s):  
J. Bentley ◽  
E. A. Kenik
Keyword(s):  
Hydrocarbon Contamination ◽  
Specimen Preparation ◽  
Surface Films ◽  
Ion Milling ◽  
Preferential Sputtering ◽  
Electron Energy Loss Spectrometry ◽  
Composition Determination ◽  
Analytical Electron ◽  
First Order Correction ◽  
Electron Energy Loss

Common artifacts on analytical electron microscope (AEM) specimens prepared from bulk materials are surface films with altered structure and composition that result from electropolishing, oxidation, hydrocarbon contamination, or ion milling (preferential sputtering or deposition of sputtered specimen or support material). Of course, the best solution for surface films is to avoid them by improved specimen preparation and handling procedures or to remove them by low energy ion sputter cleaning, a capability that already exists on some specialized AEMs and one that is likely to become increasingly common. However, the problem remains and it is surprising that surface films have not received more attention with respect to composition determination by energy dispersive X-ray spectrometry (EDS) and electron energy loss spectrometry (EELS).For EDS, an effective first-order correction to remove the contribution of surface films on wedge shaped specimens is to subtract from the spectrum of interest a spectrum obtained under identical conditions (probe current, diffracting conditions, acquisition live time) from a thinner region of the specimen.

Scanning electron microscopy of human iliac bone by a simple preparation method

1990 ◽  
Vol 48 (3) ◽  
pp. 226-227
Author(s):  
Toshihiko Takita ◽  
Tomonori Naguro ◽  
Toshio Kameie ◽  
Akihiro Iino ◽  
Kichizo Yamamoto
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Preparation Method ◽  
Specimen Preparation ◽  
Real Surface ◽  
Public Attention ◽  
Preparation Methods ◽  
The Real ◽  
Simple Preparation ◽  
Scanning Electron

Recently with the increase in advanced age population, the osteoporosis becomes the object of public attention in the field of orthopedics. The surface topography of the bone by scanning electron microscopy (SEM) is one of the most useful means to study the bone metabolism, that is considered to make clear the mechanism of the osteoporosis. Until today many specimen preparation methods for SEM have been reported. They are roughly classified into two; the anorganic preparation and the simple preparation. The former is suitable for observing mineralization, but has the demerit that the real surface of the bone can not be observed and, moreover, the samples prepared by this method are extremely fragile especially in the case of osteoporosis. On the other hand, the latter has the merit that the real information of the bone surface can be obtained, though it is difficult to recognize the functional situation of the bone.

A procedure for cross-sectioning materials for TEM analysis without ion milling

1990 ◽  
Vol 48 (4) ◽  
pp. 742-743
Author(s):  
J.P. Benedict ◽  
Ron Anderson ◽  
S. J. Klepeis
Keyword(s):  
Surface Topography ◽  
Milling Time ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Cleaning Operation ◽  
Tem Analysis ◽  
Platinum Silicide ◽  
Surface Alteration ◽  
Polishing Damage ◽  
Tools And Methods

Traditional specimen preparation procedures for non-biological samples, especially cross section preparation procedures, involves subjecting the specimen to ion milling for times ranging from minutes to tens of hours. Long ion milling time produces surface alteration, atomic number and rough-surface topography artifacts, and high temperatures. The introduction of new tools and methods in this laboratory improved our ability to mechanically thin specimens to a point where ion milling time was reduced to one to ten minutes. Very short ion milling times meant that ion milling was more of a cleaning operation than a thinning operation. The preferential thinning and the surface topography that still existed in briefly ion milled samples made the study of interfaces between materials such as platinum silicide and silicon difficult. These two problems can be eliminated by completely eliminating the ion milling step and mechanically polishing the sample to TEM transparency with the procedure outlined in this communication. Previous successful efforts leading to mechanically thinned specimens have shown that problems center on tool tilt control, removal of polishing damage, and specimen cleanliness.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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