scholarly journals Combine TEM with TCAD Simulation - A Novel Approach in Failure Analysis

2021 ◽  
Vol 27 (S1) ◽  
pp. 1548-1549
Author(s):  
Yu Zhang ◽  
Satish Kodali ◽  
Edmund Banghart ◽  
Travis Mitchell ◽  
Frieder Baumann
Keyword(s):  
Failure Analysis ◽  
Novel Approach ◽  
Tcad Simulation

scholarly journals A Fast-Result Method of Planar Polishing for Optical Microscopy

1997 ◽  
Vol 5 (9) ◽  
pp. 8-11
Author(s):  
Joseph Rubin ◽  
Tim Hazeldine
Keyword(s):  
Quality Control ◽  
Failure Analysis ◽  
Optical Microscopy ◽  
Material Removal ◽  
Novel Approach ◽  
Analysis Quality

The planarizing technique of materials lapping and polishing shows many benefits in providing samples for optical microscopy in failure analysis, quality control and related fields. A method is described below which provides both rapid and accurate micro-sections of pcb's, wafers, packaged components and other processed materials, with the use of a novel approach involving a 'calibrated' polishing base and a 'Micropositioner' head. Other benefits include the ability to halt material removal at a predetermined process endpoint and convenient sample mounting techniques.

Non Invasive Failure Analysis of Passive Electronic Devices in Wireless Modules Using X-ray Micro Tomography (MicroCT)

2008 ◽  
Author(s):  
Tyler Pendleton ◽  
Luke Hunter ◽  
S. H. Lau
Keyword(s):  
High Resolution ◽  
Failure Analysis ◽  
Electronic Devices ◽  
Interesting Case ◽  
X Rays ◽  
X Ray ◽  
Case Examples ◽  
Non Invasive ◽  
Novel Approach ◽  
Micro Tomography

Abstract Conventional microCTs or 3D x-ray upgrades from existing 2D x-ray systems have two major drawbacks when they are used for failure analysis of advanced packages: Insufficient resolution to image small (1 to 5 microns) materials and the lack of imaging contrast to visualize cracks, whiskers, and defects within low Z materials. This paper discusses some of the failure analysis (FA) case studies of wireless modules using a high resolution micro x-ray CT (XCT). These examples show the value of high resolution XCT as a novel approach to some common package level defects, including some interesting case examples, where failure mechanisms have been uncovered which could not have been done, using conventional means. The non-invasive FA technique for RF modules technique has been shown to dramatically improve the FA engineers' chances of identifying defects over conventional 2D x-rays and avoid the need for physical and tedious cross sectioning of these devices.

A Novel Approach for Enhancing Critical FIB Imaging for Failure Analysis and Circuit Edit Applications

2004 ◽  
Author(s):  
Joseph Myers ◽  
Marsha Abramo ◽  
Michael Anderson ◽  
Michael W. Phaneuf
Keyword(s):  
Aspect Ratio ◽  
Failure Analysis ◽  
Secondary Electron ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Sample Surface ◽  
Beam Current ◽  
Shielding Effect ◽  
Endpoint Detection ◽  
Novel Approach

Abstract As semiconductor device features continue to decrease in size from merely sub micron to below 100 nanometers it becomes necessary to mill smaller and higher aspect ratio FIB vias with reduced ion beam current. This significantly reduces the number of secondary electrons and ions available for endpoint detection and imaging. In addition FIB gas assisted etching introduces a gas delivery nozzle composed of conductive material. This component is grounded to prevent charge build up during ion beam imaging or milling. The proximity of the nozzle to the sample surface creates a shielding effect which reduces the secondary electron detection level as well [1]. The ability to enhance secondary electron imaging for end point detection is required for successful FIB circuit edit and failure analysis applications on advanced technologies. This paper reviews the results obtained using FIB Assist, an image and signal enhancement product for the FEI / Micrion platform, for critical FIB endpoint determination. Examples of FIB fabricated probe points with 30 x 30 nm FIB vias and circuit edit applications endpointing on metal 1 with high aspect ratio holes are presented.

Stress and Failure Analysis for Pure Bending Tubes of Cylindrically Orthotropic Composite

2014 ◽  
Vol 501-504 ◽  
pp. 2493-2498
Author(s):  
Can Hui Zhang ◽  
Pei Liu
Keyword(s):  
Failure Analysis ◽  
Conventional Technique ◽  
Polar Coordinates ◽  
Pure Bending ◽  
Composite Tubes ◽  
Orthotropic Composite ◽  
Singular Terms ◽  
Novel Approach ◽  
Cylindrically Orthotropic ◽  
Different Thickness

A novel approach is suggested for the stress and failure analysis for the pure bending of composite tubes made up of layers of angle 0° or 90° together with other arbitrary angles. The new unified coefficients as well as their nonsingular parameters are introduced to overcome the problem in an earlier approach where some of the parameters are singular for a few layer orientations even though the stresses and displacements are nonsingular. It is pointed out that such singular terms in the earlier approach cannot be simply eliminated as the conventional technique for the singular terms in the stresses in the form of polar coordinates. Otherwise, the continuity conditions at the interface between special and ordinary layers cannot be satisfied. In addition, the Tsai-Hill theory is employed for the failure analysis. Since the stresses are explicit, it is possible to exactly predict the failure positions so the calculations can be dramatically saved. The flexural stiffnesses as well as the maximum moments and their failure positions of the tube [90/±45/0] with different thickness of every layer are derived for the application and design in engineering.

Laser Voltage Tracing—A Novel Approach for Imaging Pulsed Signals

2016 ◽  
Author(s):  
Christopher Nemirow ◽  
Neel Leslie
Keyword(s):  
Failure Analysis ◽  
Test Pattern ◽  
Experimental Setup ◽  
New Approach ◽  
Voltage Imaging ◽  
Novel Approach

Abstract LVx, a workhorse in many failure analysis laboratories, consists of laser voltage imaging (LVI) and laser voltage probing. Laser voltage tracing (LVT) eliminates the inherent restrictions bestowed by LVI and reduces the need for costly probing. It monitors a distinct feature of the test pattern and creates a corresponding signal map. This weapon in the LVx arsenal significantly decreases debug time and will prove as invaluable as LVI. Beginning with an overview of the limitations of traditional LVx, this paper provides information on the process steps, experimental setup, and applications of LVT. LVT introduces a new approach to monitoring LVx signals. The most obvious LVT application is debugging problematic peripheral NAND circuitry.

scholarly journals Path Loss Failure Analysis of Unknown Wireless Devices using Software Defined Radio (SDR)

2019 ◽  
Vol 9 (2S4) ◽  
pp. 660-662
Keyword(s):  
Failure Analysis ◽  
Software Defined Radio ◽  
Power Saving ◽  
Path Loss ◽  
Low Complexity ◽  
Estimation Accuracy ◽  
Wireless Devices ◽  
Field Environment ◽  
Novel Approach ◽  
Power And Energy

The efficient method for detection of unknown wireless devices using software-defined radios (SDR) in wireless communication is proposed to analyze the power loss. SDR analyze the position of unknown parameter and their transmission of power and energy by sensing the carrier frequency and measuring the signal concerning the Received Signal Strengths (RSS) method. RSS based positioning techniques are useful for implementation of low complexity, and they are susceptible to path loss in the programmable field environment. The RSS based techniques evaluate the position of object and transmission of power from unknown devices by assuming the value of path loss failure before estimation. However, the location of the estimation accuracy depends on the discrepancy of the path loss exponent (PLE) of the object. The novelty of the proposed method introduces a novel approach for path loss failure analysis and calculates the power saving of unknown devices in SDR.

Failure Analysis of Single-Bit Charge Loss after Stress and Studies on Silicon Dopant Profile

2016 ◽  
Author(s):  
Rong-Wei Gong ◽  
Hsiao-Tien Chang ◽  
Hui-Wen Chan ◽  
Lian-Feng Lee ◽  
Chih-Ching Shih ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flash Memory ◽  
Degradation Process ◽  
Electrical Failure ◽  
Dopant Profile ◽  
Analysis Technique ◽  
Drain Side ◽  
Charge Loss ◽  
Selective Chemical ◽  
Tcad Simulation

Abstract The single-bit charge loss of flash memory after stress has been investigated using TEM with selective chemical etching and TCAD simulation for the effect of silicon dopant profile and electrical failure analysis technique. However, the abnormal dopant profile on the drain-side of the failing bit observed in the TEM does not match the leakage behavior from the simulation. A qualitative model for the degradation process is proposed based on the electrical failure analysis results, it is suggested that the hole generated by avalanche breakdown captured by oxide traps on the drain-side during the stress is the source of leakage current.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

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